NO (Source
1
)
COM
NC (Source
2
)
1
2
3
6
5
Top View
IN
V+
GND
4
SC-70
Device Marking: E7xx
DG2012
Vishay Siliconix
New Product
Document Number: 72176
S-03723--Rev. A, 07-Apr-03
www.vishay.com
1
Low-Voltage Single SPDT Analog Switch
FEATURES
D
Low Voltage Operation (1.8 V to 5.5 V)
D
Low On-Resistance - r
DS(on)
: 1
W
Typ.
D
Fast Switching - t
ON
: 17 ns, t
OFF
: 13 ns
D
Low Leakage
D
TTL/CMOS Compatible
D
6-Pin SC-70 Package
BENEFITS
D
Reduced Power Consumption
D
Simple Logic Interface
D
High Accuracy
D
Reduce Board Space
APPLICATIONS
D
Cellular Phones
D
Communication Systems
D
Portable Test Equipment
D
Battery Operated Systems
D
Sample and Hold Circuits
DESCRIPTION
The DG2012 is a single-pole/double-throw monolithic CMOS
analog switch designed for high performance switching of
analog signals. Combining low power, high speed (t
ON
: 17 ns,
t
OFF
: 13 ns), low on-resistance (r
DS(on)
: 1
W
) and small
physical size (SC70), the DG2012 is ideal for portable and
battery powered applications requiring high performance and
efficient use of board space.
The DG2012 is built on Vishay Siliconix's low voltage
submicron CMOS process. An epitaxial layer prevents
latchup. Break-before -make is guaranteed for DG2012.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
Logic
NC
NO
0
ON
OFF
1
OFF
ON
ORDERING INFORMATION
Temp Range
Package
Part Number
-40 to 85
C
SC70-6
DG2012DL
DG2012
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72176
S-03723--Rev. A, 07-Apr-03
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
-0.3 to +6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
a
-0.3 to (V+ + 0.3 V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (NO, NC and COM Pins)
"
100 mA
. . . . . . . . . . . . . . . .
Peak Current
"
300 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)
-65 to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Packages)
b
6-Pin SO70
c
250 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b.
All leads welded or soldered to PC Board.
c.
Derate 3.1 mW/
_
C above 70
_
C
SPECIFICATIONS (V+ = 2.0 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85
_
C
Parameter
Symbol
V+ = 2.0 V,
"
10%, V
IN
= 0.4 or 1.6 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V+ = 1.8 V, V
COM
= 0.2 V/0.9 V
I
NO
, I
NC
= 10 mA
Room
Full
d
2.7
2.7
5.3
5.3
r
ON
Flatness
d
r
ON
Flatness
V+ = 1.8 V, V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Room
3
W
r
ON
Match
d
D
r
ON
V+ = 1.8 V, V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Room
0.25
Switch Off Leakage Current
f
I
NO(off),
I
NC(off)
V+ = 2.2 V
Room
Full
d
-0.5
-5.0
0.5
5.0
Switch Off Leakage Current
f
I
COM(off)
V+ = 2.2 V
V
NO,
V
NC
= 0.5 V/1.5 V, V
COM
= 1.5 V/0.5 V
Room
Full
d
-0.5
-5.0
0.5
5.0
nA
Channel-On Leakage Current
f
I
COM(on)
V+ = 2.2 V, V
NO,
V
NC
= V
COM
= 0.5 V/1.5 V
Room
Full
d
-0.5
-5.0
0.5
5.0
Digital Control
Input High Voltage
V
INH
Full
1.6
V
Input Low Voltage
V
INL
Full
0.4
V
Input Capacitance
d
C
in
Full
3
pF
Input Current
f
I
INL
or I
INH
V
IN
= 0 or V+
Full
-1
1
m
A
Dynamic Characteristics
Turn-On Time
d
t
ON
V
V 1 5 V R 300
W
C 35 F
Room
Full
d
43
63
65
Turn-Off Time
d
t
OFF
V
NO
or V
NC
= 1.5 V, R
L
= 300
W
, C
L
= 35 pF
Figures 1 and 2
Room
Full
d
23
45
46
ns
Break-Before-Make Time
d
t
d
Room
2
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
W
, Figure 3
Room
7
pC
Off-Isolation
d
OIRR
R
L
= 50
W
C
L
= 5 pF f = 1 MHz
Room
-63
dB
Crosstalk
d
X
TALK
R
L
= 50
W
, C
L
= 5 pF, f = 1 MHz
Room
-64
dB
NO, NC Off Capacitance
d
C
NO(off),
C
NC(off)
V
IN
= 0 or V+, f = 1 MHz
Room
22
pF
Channel-On Capacitance
d
C
ON
V
IN
= 0 or V+, f = 1 MHz
Room
58
pF
DG2012
Vishay Siliconix
New Product
Document Number: 72176
S-03723--Rev. A, 07-Apr-03
www.vishay.com
3
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85
_
C
Parameter
Symbol
V+ = 3 V,
"
10%, V
IN
= 0.6 or 2.0 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V+ = 2.7 V, V
COM
= 0.2 V/1.5 V, I
NO
I
NC
= 10 mA
Room
Full
1.4
1.6
2.1
2.3
r
ON
Flatness
r
ON
Flatness
V+ = 2.7 V, V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Room
0.85
W
r
ON
MatchFlat
D
r
ON
V+ = 2.7 V, V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Room
0.25
Switch Off Leakage Current
f
I
NO(off),
I
NC(off)
V+ = 3.3 V
Room
Full
-0.5
-5.0
0.5
5.0
Switch Off Leakage Current
f
I
COM(off)
V+ = 3.3 V
V
NO,
V
NC
= 1 V/3 V, V
COM
= 3 V/1 V
Room
Full
-0.5
-5.0
0.5
5.0
nA
Channel-On Leakage Current
f
I
COM(on)
V+ = 3.3 V, V
NO,
V
NC
= V
COM
= 1 V/3 V
Room
Full
-0.5
-5.0
0.5
5.0
Digital Control
Input High Voltage
V
INH
Full
2
V
Input Low Voltage
V
INL
Full
0.6
V
Input Capacitance
d
C
in
Full
3
pF
Input Current
f
I
INL
or I
INH
V
IN
= 0 or V+
Full
-1
1
m
A
Dynamic Characteristics
Turn-On Time
t
ON
V
V 2 0 V R 300
W
C 35 F
Room
Full
27
47
48
Turn-Off Time
t
OFF
V
NO
or V
NC
= 2.0 V, R
L
= 300
W
, C
L
= 35 pF
Figure 1 and 2
Room
Full
17
37
38
ns
Break-Before-Make Time
t
d
Room
1
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
W
, Figure 3
Room
10
pC
Off-Isolation
d
OIRR
R
L
= 50
W
C
L
= 5 pF f = 1 MHz
Room
-63
dB
Crosstalk
d
X
TALK
R
L
= 50
W
, C
L
= 5 pF, f = 1 MHz
Room
-64
dB
NO, NC Off Capacitance
d
C
NO(off),
C
NC(off)
V
IN
= 0 or V+, f = 1 MHz
Room
21
pF
Channel-On Capacitance
d
C
ON
V
IN
= 0 or V+, f = 1 MHz
Room
57
pF
Power Supply
Power Supply Range
V+
1.8
5.5
V
Power Supply Current
I+
V
IN
= 0 or V+
0.01
1.0
m
A
DG2012
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72176
S-03723--Rev. A, 07-Apr-03
SPECIFICATIONS (V+ = 5.0 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85
_
C
Parameter
Symbol
V+ = 5 V,
"
10%, V
IN
= 0.8 or 2.4 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V+ = 4.5 V, V
COM
= 0.5 V/2.5 V
I
NO
, I
NC
= 10 mA
Room
Full
1.0
1.2
1.8
1.9
r
ON
Flatness
d
r
ON
Flatness
V+ = 4.5 V, V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Room
0.55
W
r
ON
Match
d
D
r
ON
V+ = 4.5 V, V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Room
0.25
Switch Off Leakage Current
I
NO(off),
I
NC(off)
V+ = 5.0 V
Room
Full
-0.5
-5.0
0.5
5.0
Switch Off Leakage Current
I
COM(off)
V+ = 5.0 V
V
NO,
V
NC
= 0.5 V/4.5 V, V
COM
= 4.5 V/0.5 V
Room
Full
-0.5
-5.0
0.5
5.0
nA
Channel-On Leakage Current
I
COM(on)
V+ = 5.0 V, V
NO,
V
NC
= V
COM
= 0.5 V/4.5 V
Room
Full
-0.5
-5.0
0.5
5.0
Digital Control
Input High Voltage
V
INH
Full
2.4
V
Input Low Voltage
V
INL
Full
0.8
V
Input Capacitance
C
in
Full
3
pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full
-1
1
m
A
Dynamic Characteristics
Turn-On Time
d
t
ON
V
V 3 V R 300
W
C 35 F
Room
Full
17
38
39
Turn-Off Time
d
t
OFF
V
NO
or V
NC
= 3 V, R
L
= 300
W
, C
L
= 35 pF
Figure 1 and 2
Room
Full
13
32
33
ns
Break-Before-Make Time
d
t
d
Room
1
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
W
, Figure 3
Room
20
pC
Off-Isolation
d
OIRR
R
L
= 50
W
C
L
= 5 pF f = 1 MHz
Room
-63
dB
Crosstalk
d
X
TALK
R
L
= 50
W
, C
L
= 5 pF, f = 1 MHz
Room
-64
dB
Source-Off Capacitance
d
C
NO(off),
C
NC(off)
V
IN
= 0 or V+, f = 1 MHz
Room
20
pF
Channel-On Capacitance
d
C
ON
V
IN
= 0 or V+, f = 1 MHz
Room
56
pF
Notes:
a.
Room = 25
C, Full = as determined by the operating suffix.
b.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c.
Typical values are for design aid only, not guaranteed nor subject to production testing.
d.
Guarantee by design, nor subjected to production test.
e.
V
IN
= input voltage to perform proper function.
f.
Guaranteed by 5-V leakage testing, not production tested.
DG2012
Vishay Siliconix
New Product
Document Number: 72176
S-03723--Rev. A, 07-Apr-03
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
1
2
3
4
5
6
0
1
2
3
4
5
10 m
-60
-40
-20
0
20
40
60
80
100
100
0.1
10
-60
-40
-20
0
20
40
60
80
100
Supply Current vs. Input Switching Frequency
Input Switching Frequency (Hz)
10 K
1 M
10 M
100 K
1 K
100
10
10000
1000
1
Supply Current vs. Temperature
Temperature (
_
C)
I+
-
Supply Current (nA)
-
On-Resistance (
r
ON
W
)
0
1
2
3
4
5
6
0
1
2
3
4
5
-250
-200
-150
-100
-50
0
50
100
150
200
250
0
1
2
3
4
5
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
V
COM
, V
NO
, V
NC
- Analog Voltage
r
ON
vs. V
COM
Supply Voltage
V
COM
- Analog Voltage (V)
V+ = 1.8 V
V+ = 2 V
V+ = 3 V
V+ = 5 V
r
ON
vs. Analog Voltage and Temperature
-
On-Resistance (
r
ON
W
)
V
COM
- Analog Voltage (V)
V+ = 2 V
V+ = 5 V
85
_
C
-40
_
C
25
_
C
85
_
C
25
_
C
10
V+ = 5 V
V
IN
= 0 V
I+
-
Supply Current (A)
Leakage Current (pA)
Temperature (
_
C)
1000
V+ = 5 V
1
I
NO(off)
/I
NC(off)
I
COM(on)
I
COM(off)
Leakage Current (pA)
V+ = 5 V
T = 25
_
C
I
NO(off)
/I
NC(off)
I
COM(on)
I
COM(off)
100 p
1 m
100
m
10
m
1
m
10 n
100 n
I
S
= 10 mA
I
S
= 10 mA
V+ = 3 V
85
_
C
-40
_
C
25
_
C
-40
_
C
100
V+ = 3 V
1 n
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