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Электронный компонент: DG2020DV-T1-E3

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NO (Source
1
)
COM
NC (Source
2
)
1
2
3
6
5
Top View
IN
V+
GND
4
TSOP-6
Device Marking: E3xxx
DG2020
Vishay Siliconix
New Product
Document Number: 71676
S-04456--Rev. A, 03-Aug-01
www.vishay.com
1
Low-Voltage Single Asymmetrical SPDT Analog Switch
FEATURES
D
Low Voltage Operation (2.7 V to 5.5 V)
D
Low On-Resistance - r
ON
NO = 0.8
W
NC = 1.2
W
D
Low Power Consumption
D
TTL/CMOS Compatible
D
TSOP-6 Package
BENEFITS
D
Reduced Power Consumption
D
Simple Logic Interface
D
High Accuracy
D
Reduce Board Space
APPLICATIONS
D
Cellular Phones
D
Communication Systems
D
Portable Test Equipment
D
Battery Operated Systems
DESCRIPTION
The DG2020 is a single-pole/double-throw monolithic CMOS
analog switch designed for high performance switching of
analog signals. Combining low power, high speed, low
on-resistance and small physical size, the DG2020 is ideal for
portable and battery powered applications requiring high
performance and efficient use of board space.
The DG2020 is built on Vishay Siliconix's low voltage JI2 process.
An epitaxial layer prevents latchup. Break-before-make is
guaranteed.
The switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
Logic
NC
NO
0
ON
OFF
1
OFF
ON
ORDERING INFORMATION
Temp Range
Package
Part Number
-40 to 85
C
TSOP-6
DG2020DV
DG2020
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71676
S-04456--Rev. A, 03-Aug-01
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
-0.3 to +6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
a
-0.3 to (V+ + 0.3 V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (Any terminal)
"
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current
"
200 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)
-65 to 125
C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Packages)
b
TSOP-6
c
570 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b.
All leads welded or soldered to PC Board.
c.
Derate 7.0 mW/
_
C above 25
_
C
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Limits
40 to 85
_
C
Parameter
Symbol
V+ = 3 V,
"
10%, V
IN
= 0.4 or 2.0 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
r
ON(NO)
Room
Full
1.4
1.5
2.0
2.1
On-Resistance
r
ON(NC)
V+ = 2.7 V, V
COM
= 1.5 V, I
NO
, I
NC
= 100 mA
Room
Full
2.2
2.3
3.2
3.3
W
r
ON
Flatness
d
r
ON(NO)
Flatness
V+ = 2.7 V
V
COM
= 0 to V+, I
NO
, I
NC
= 100 mA
Room
0.42
I
NO(off)
,
I
NC(off)
V+ = 3.3 V, V
NO
, V
NC
= 1 V/3 V
Room
Full
2.3
60
2.3
60
Switch Off Leakage Current
f
I
COM(off)
V+ = 3.3 V, V
NO
, V
NC
= 1 V/3 V
V
COM
= 3 V/1 V
Room
Full
2.3
60
2.3
60
nA
Channel-On Leakage Current
f
I
COM(on)
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 1 V/3 V
Room
Full
2.3
60
2.3
60
Digital Control
Input High Voltage
V
INH
Full
2
Input Low Voltage
V
INL
Full
0.4
V
Input Capacitance
C
in
Full
3.7
pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full
1
1
m
A
Dynamic Characteristics
t
ON(NO)
Room
Full
6
10
11
Turn-On Time
t
ON(NC)
W
Room
Full
5
7
8
t
OFF(NO)
V
NO
or V
NC
= 2.0 V, R
L
= 300
W
, C
L
= 35 pF
Room
Full
2
5
5.5
m
s
Turn-Off Time
t
OFF(NC)
Room
Full
2
4
4.5
Break-Before-Make Time
t
d
V
NO
or V
NC
= 2.0 V, R
L
= 300
W
, C
L
= 35 pF
Full
1
3
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
W
Room
1
pC
Off-Isolation
d
OIRR
W
Room
52
Crosstalk
d
X
TALK
R
L
= 50
W
, C
L
= 5 pF, f = 1 MHz
Room
53
dB
C
NO(off)
Room
75
N
O
, N
C
Off Capacitance
d
C
NC(off)
Room
34
C
NO(on)
V
IN
= 0 or V+, f = 1 MHz
Room
88
pF
Channel-On Capacitance
d
C
NC(on)
Room
95
Power Supply
Power Supply Range
V+
2.7
3.3
V
Power Supply Current
I+
Full
0.2
1.0
m
A
Power Consumption
P
C
V
IN
= 0 or V+
Full
3.3
m
W
DG2020
Vishay Siliconix
New Product
Document Number: 71676
S-04456--Rev. A, 03-Aug-01
www.vishay.com
3
SPECIFICATIONS (V+ = 5 V)
Test Conditions
Otherwise Unless Specified
Limits
40 to 85
_
C
Parameter
Symbol
V+ = 5 V,
"
10%, V
IN
= 0.8 or 2.4 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
r
ON
(
NO)
Room
Full
0.8
0.9
1.1
1.2
On-Resistance
r
ON
(
NC)
V+ = 4.5 V, V
COM
= 3 V, I
NO
, I
NC
= 100 mA
Room
Full
1.2
1.3
1.6
1.7
W
r
ON
Flatness
d
r
ON(NO)
Flatness
V+ = 4.5 V, V
COM
= 0 to V+, I
NO
, I
NC
= 100 mA
Room
0.13
I
NO(off)
,
I
NC(off)
V+ = 5.5 V
Room
Full
5.3
98
5.3
98
Switch Off Leakage Current
I
COM(off)
V+ = 5.5 V
V
NO
, V
NC
= 1 V/4.5 V, V
COM
= 4.5 V/1 V
Room
Full
5.3
98
5.3
98
nA
Channel-On Leakage Current
I
COM(on)
V+ = 5.5 V, V
NO
, V
NC
= V
COM
= 1 V/4.5 V
Room
Full
5.3
98
5.3
98
Digital Control
Input High Voltage
V
INH
Full
2.4
Input Low Voltage
V
INL
Full
0.8
V
Input Capacitance
C
in
Full
3.5
pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full
1
1
m
A
Dynamic Characteristics
t
ON
(
NO)
Room
Full
3
6
6.5
Turn-On Time
t
ON
(
NC)
W
Room
Full
2
5
5.5
t
OFF
(
NO)
V
NO
or V
NC
= 3 V, R
L
= 300
W
, C
L
= 35 pF
Room
Full
1
4
4.5
m
s
Turn-Off Time
t
OFF
(
NC)
Room
Full
1
3
3.5
Break-Before-Make Time
t
d
V
NO
or V
NC
= 3 V, R
L
= 300
W
, C
L
= 35 pF
Full
0.3
1.5
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
W
Room
5
pC
Off-Isolation
d
OIRR
W
Room
53
Crosstalk
d
X
TALK
R
L
= 50
W
, C
L
= 5 pF, f = 1 MHz
Room
54
dB
C
NO(off)
Room
65
Source-Off Capacitance
d
C
NC(off)
Room
32
C
NO(on)
V
IN
= 0 or V+, f = 1 MHz
Room
90
pF
Channel-On Capacitance
d
C
NC(on)
Room
95
Power Supply
Power Supply Range
V+
4.5
5.5
V
Power Supply Current
I+
Full
0.2
1.0
m
A
Power Consumption
P
C
V
IN
= 0 or V+
Full
5.5
m
W
Notes:
a.
Room = 25
C, Full = as determined by the operating suffix.
b.
Typical values are for design aid only, not guaranteed nor subject to production testing.
c.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d.
Guarantee by design, nor subjected to production test.
e.
V
IN
= input voltage to perform proper function.
f.
Guaranteed by 5-V leakage testing, not production tested.
DG2020
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 71676
S-04456--Rev. A, 03-Aug-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60
40
20
0
20
40
60
80
100
Supply Current vs. Input Switching Frequency
Input Switching Frequency (Hz)
I+
Supply Current (A)
0.50
0.75
1.00
1.25
1.50
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
r
ON
vs. V
COM
and Supply Voltage
V
COM
Analog Voltage (V)
V+ = 2.7 V (NC)
On-Resistance (
r
ON
W
)
V+ = 4.5 V (NC)
V+ = 2.7 V (NO)
V+ = 4.5 V (NO)
0.5
1.0
1.5
2.0
2.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
r
ON
vs. Analog Voltage and Temperature
V
COM
Analog Voltage (V)
NC @ 85
_
C
NC @ 25
_
C
NC @ 40
_
C
On-Resistance (
r
ON
W
)
r
ON
vs. Analog Voltage and Temperature
V
COM
Analog Voltage (V)
V+ = 5 V
On-Resistance (
r
ON
W
)
0.01
10
100
Supply Current vs. Temperature
0
2
4
6
8
60
40
20
0
20
40
60
80
100
Switching Time vs.
Temperature and Supply Voltage
V
COM
Analog Voltage (V)
NO Switch
V+ = 3 V
NO @ 85
_
C
NO @ 25
_
C
NO @ 40
_
C
NC @ 85
_
C
NC @ 25
_
C
NC @ 40
_
C
NO @ 25
_
C
NO @ 40
_
C
NO @ 85
_
C
Temperature (
_
C)
V+ = 5 V
V
IN
= 0 V
0.1
1
I+
Supply Current (nA)
/
t
ON
Switching
T
ime (
t
OFF
s)
m
t
ON
V+ = 3 V
t
ON
V+ = 5 V
t
OFF
V+ = 3 V
t
OFF
V+ = 5 V
10
10 K
100 K
10 M
100
1 K
1 M
100 mA
10 mA
1 mA
100
m
A
10
m
A
1
m
A
0.1
m
A
V+ = 5 V
DG2020
Vishay Siliconix
New Product
Document Number: 71676
S-04456--Rev. A, 03-Aug-01
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
40
30
20
10
0
10
20
0
1
2
3
4
5
6
Charge Injection vs. Analog Voltage
V
COM
Analog Voltage (V)
Q
Charge Injection (pC)
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
6
Switching Threshold vs. Supply Voltage
V+ Supply Voltage (V)
Switching
Threshold (V)
V
T
100 K
90
10 M
10
70
50
100 M
1 G
1 M
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
Frequency (Hz)
0
1
2
3
4
5
6
60
40
20
0
20
40
60
80
100
Switching Time vs.
Temperature and Supply Voltage
V
COM
Analog Voltage (V)
NC Switch
/
t
ON
Switching
T
ime (
t
OFF
s)
m
t
ON
V+ = 3 V
t
ON
V+ = 5 V
t
OFF
V+ = 5 V
t
OFF
V+ = 3 V
(dB)
Loss, OIRR, X
T
ALK
30
10
NO Switch
V+ = 5 V
V+ = 3 V
LOSS
OIRR
X
TALK
V+ = 3 V
R
L
= 50
W
TEST CIRCUITS
FIGURE 1. Switching Time
Switch
Input
C
L
(includes fixture and stray capacitance)
V+
IN
NO or NC
C
L
35 pF
COM
Logic
Input
R
L
300
W
V
OUT
GND
V+
50%
0 V
Logic
Input
Switch
Output
t
ON
t
OFF
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
0 V
Switch Output
V
OUT
+
V
COM
R
L
R
L
)
R
ON
0.9 x V
OUT
t
r
t
20 ns
t
f
t
20 ns
V
INH
V
INL