NO2
COM2
IN2
1
2
3
10
9
Top View
V+
NO1
COM1
8
DG2531
MSOP-10
NC2
GND
4
5
7
IN1
NC1
6
NC2
COM2
IN2
1
2
3
10
9
Top View
V+
NC1
COM1
8
DG2532
MSOP-10
NO2
GND
4
5
7
IN1
NO1
6
DG2531/DG2532
Vishay Siliconix
New Product
Document Number: 72742
S-40087--Rev. A, 02-Feb-04
www.vishay.com
1
0.4-W Low-Voltage Dual SPDT Analog Switch
FEATURES
D Low Voltage Operation (1.8 V to 5.5 V)
D Low On-Resistance - r
ON:
0.4 W @ 2.7 V
D -69 dB OIRR @ 2.7 V, 100 kHz
D MSOP-10 Package
D ESD Protection >2000 V
BENEFITS
D Reduced Power Consumption
D High Accuracy
D Reduce Board Space
D 1.6-V Logic Compatible
D High Bandwidth
APPLICATIONS
D Cellular Phones
D Speaker Headset Switching
D Audio and Video Signal Routing
D PCMCIA Cards
D Battery Operated Systems
D Relay Replacement
DESCRIPTION
The DG2531/DG2532 is a sub 1-W (0.4 W @ 2.7 V ) dual SPDT
analog switches designed for low voltage applications.
The DG2531/DG2532 has on-resistance matching (less than
0.05 W @ 2.7 V) and flatness (less than 0.2 W @ 2.7 V) that are
guaranteed over the entire voltage range. Additionally, low
logic thresholds makes the DG2531/DG2532 an ideal
interface to low voltage DSP control signals.
The DG2531/DG2532 has fast switching speed (on/off time @
40 and 35 ns) with break-before-make guaranteed. In the On
condition, all switching elements conduct equally in both
directions. Off-isolation and crosstalk is -69 dB @ 100 kHz.
The DG2531/DG2532 is built on Vishay Siliconix's
high-density low voltage CMOS process. An eptiaxial layer is
built in to prevent latchup. The DG2531/DG2532 contains the
additional benefit of 2,000 V ESD protection.
Packaged in space saving MSOP-10, the DG2531/DG2532 is
a high performance, low r
ON
switches for battery powered
applications.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
Logic
NC1 and NC2
NO1 and NO2
0
ON
OFF
1
OFF
ON
ORDERING INFORMATION
Temp Range
Package
Part Number
-40 to 85C
MSOP-10
DG2531DQ
DG2532DQ
DG2531/DG2532
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72742
S-40087--Rev. A, 02-Feb-04
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
-0.3 to +6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
a
-0.3 to (V+ + 0.3 V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (NO, NC, COM)
"300 mA
. . . . . . . . . . . . . . . . . . . . . . .
Peak Current
"500 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)
-65 to 150C
. . . . . . . . . . . . . . . . . . . . . . . . . .
ESD per Method 3015.7
>2 kV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Packages)
b
MSOP-10
c
320 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b.
All leads welded or soldered to PC Board.
c.
Derate 4.0 mW/_C above 70_C
Permanent damage to the device may occur when the "Absolute Maximum Ratings" are exceeded. These stress ratings do not indicate conditions for which the device
is intended to be functional. Functionality is only guaranteed to the conditions specified by the parametric table within the document. .
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85_C
Parameter
Symbol
V+ = 3 V, "10%, V
IN
= 0.5 or 1.4 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V 2 7 V V
0 6/1 5 V
Room
Full
0.4
0.6
0.7
r
ON
Flatness
d
r
ON
Flatness
V+ = 2.7 V, V
COM
= 0.6/1.5 V
I
NO
, I
NC
= 100 mA
Room
0.12
0.2
W
On-Resistance
Match Between Channels
d
Dr
DS(on)
Room
0.05
Switch Off Leakage Current
I
NO(off)
,
I
NC(off)
V+ = 3.3 V, V
NO
, V
NC
= 0.3 V/3 V
Room
Full
-1
-10
1
10
Switch Off Leakage Current
I
COM(off)
V+ = 3.3 V, V
NO
, V
NC
= 0.3 V/3 V
V
COM
= 3 V/0.3 V
Room
Full
-1
-10
1
10
nA
Channel-On Leakage Current
I
COM(on)
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 0.3 V/3 V
Room
Full
-1
-10
1
10
Digital Control
Input High Voltage
d
V
INH
Full
1.4
V
Input Low Voltage
V
INL
Full
0.5
V
Input Capacitance
C
in
Full
7
pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full
1
1
mA
Dynamic Characteristics
Turn-On Time
t
ON
V
NO
or V
NC
= 2 0 V R
L
= 50 W C
L
= 35 pF
Room
Full
40
70
77
Turn-Off Time
t
OFF
V
NO
or V
NC
= 2.0 V, R
L
= 50 W, C
L
= 35 pF
Room
Full
35
65
72
ns
Break-Before-Make Time
t
d
V
NO
or V
NC
= 2.0 V, R
L
= 50 W, C
L
= 35 pF
Full
1
4
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 1.5 V, R
GEN
= 0 W
Room
54
pC
Off-Isolation
d
OIRR
R
L
= 50 W C
L
= 5 pF f = 100 KHz
Room
-69
dB
Crosstalk
d
X
TALK
R
L
= 50 W, C
L
= 5 pF, f = 100 KHz
Room
-69
dB
N
O
N
C
Off Capacitance
d
C
NO(off)
Room
143
N
O
, N
C
Off Capacitance
d
C
NC(off)
V
IN
= 0 or V+ f = 1 MHz
Room
143
pF
Channel On Capacitance
d
C
NO(on)
V
IN
= 0 or V+, f = 1 MHz
Room
403
pF
Channel-On Capacitance
d
C
NC(on)
Room
403
Power Supply
Power Supply Range
V+
1.8
5.5
V
Power Supply Current
I+
V
IN
= 0 or V+
Full
1.0
mA
Notes:
a.
Room = 25C, Full = as determined by the operating suffix.
b.
Typical values are for design aid only, not guaranteed nor subject to production testing.
c.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d.
Guarantee by design, nor subjected to production test.
e.
V
IN
= input voltage to perform proper function.
DG2531/DG2532
Vishay Siliconix
New Product
Document Number: 72742
S-40087--Rev. A, 02-Feb-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
10 K
100 K
10 M
100
1 K
1 M
100 mA
10 mA
1 mA
100 mA
10 mA
1 mA
100 nA
1 nA
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
Supply Current vs. Input Switching Frequency
Input Switching Frequency (Hz)
I+
-
Supply Current (A)
r
ON
vs. V
COM
and Supply Voltage
V
COM
- Analog Voltage (V)
T = 25_C
I
A
= 100 mA
-
On-Resistance (
r
ON
W
)
V+ = 1.5 V @ 10 mA
V+ = 5.0 V
r
ON
vs. Analog Voltage and Temperature (NC1)
V
COM
- Analog Voltage (V)
-
On-Resistance (
r
ON
W
)
-300
-250
-200
-150
-100
-50
0
50
100
150
200
250
300
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Leakage vs. Analog Voltage
V
COM
- Analog Voltage (V)
V+ = 5 V
10
10000
100000
Supply Current vs. Temperature
Temperature (_C)
100
1000
I+
-
Supply Current (nA)
V+ = 3.0 V
V
IN
= 0 V
-60
-40
-20
0
20
40
60
80
100
1
10000
Leakage Current vs. Temperature
Temperature (_C)
V+ = 3.0 V
100
1000
Leakage Current (pA)
I
COM(on)
I
COM(off)
I
NO(off)
, I
NC(off)
Leakage Current (pA)
V+ = 3.0 V
I
COM(on)
I
COM(off)
I
NO(off)
, I
NC(off)
V+ = 1.8 V
V+ = 2.0 V
V+ = 3.0 V
V+ = 3.0 V
I
S
= 100 mA
85_C
25_C
-40_C
10 nA
10
DG2531/DG2532
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72742
S-40087--Rev. A, 02-Feb-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-350
-300
-250
-200
-150
-100
-50
0
50
100
150
200
250
0
1
2
3
4
5
Charge Injection vs. Analog Voltage
V
COM
- Analog Voltage (V)
Q
-
Charge Injection (pC)
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0
1
2
3
4
5
6
Switching Threshold vs. Supply Voltage
V+ - Supply Voltage (V)
-
Switching
Threshold (V)
V
T
100 K
-90
10 M
10
-70
-50
100 M
1 G
1 M
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
Frequency (Hz)
0
10
20
30
40
50
60
70
80
-60
-40
-20
0
20
40
60
80
100
Switching Time vs. Temperature
/
t
ON
-
Switching
T
ime (ns)
t
OFF
t
ON
V+ = 3 V
t
OFF
V+ = 3 V
(dB)
Loss, OIRR, X
T
ALK
-30
-10
V+ = 5 V
V+ = 3.0 V
OIRR
X
TALK
V+ = 3.0 V
R
L
= 50 W
Temperature (_C)
t
ON
V+ = 2 V
t
OFF
V+ = 2 V
Loss
V+ = 2.0 V
TEST CIRCUITS
FIGURE 1. Switching Time
Switch
Input
C
L
(includes fixture and stray capacitance)
V+
IN
NO or NC
C
L
35 pF
COM
Logic
Input
R
L
300 W
V
OUT
GND
V+
50%
0 V
Logic
Input
Switch
Output
t
ON
t
OFF
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
0 V
Switch Output
V
OUT
+ V
COM
R
L
R
L
) R
ON
0.9 x V
OUT
t
r
t 5 ns
t
f
t 5 ns
V
INH
V
INL
DG2531/DG2532
Vishay Siliconix
New Product
Document Number: 72742
S-40087--Rev. A, 02-Feb-04
www.vishay.com
5
TEST CIRCUITS
FIGURE 2. Break-Before-Make Interval
C
L
= 1 nF
R
gen
V
OUT
COM
V
IN
= 0 - V+
IN
GND
V+
V+
+
NC or NO
FIGURE 3. Charge Injection
C
L
(includes fixture and stray capacitance)
NC
V
NO
NO
V
NC
0 V
Logic
Input
Switch
Output
V
O
V
NC
= V
NO
90%
t
D
IN
COM
V+
GND
V+
C
L
35 pF
V
O
R
L
300 W
V
INL
V
INH
t
r
t 5 ns
t
f
t 5 ns
t
D
Off
On
On
IN
DV
OUT
V
OUT
Q = DV
OUT
x C
L
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 4. Off-Isolation
FIGURE 5. Channel Off/On Capacitance
NC or NO
f = 1 MHz
IN
COM
GND
0 V, 2.4 V
Meter
HP4192A
Impedance
Analyzer
or Equivalent
10 nF
V+
V+
IN
GND
NC or NO
0V, 2.4 V
10 nF
COM
Off Isolation + 20 log
V
COM
V
NO NC
R
L
Analyzer
V+
V+
COM
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