DG308B
IN
1
IN
2
D
1
D
2
S
1
S
2
V
V+
GND
NC
S
4
S
3
D
4
D
3
IN
4
IN
3
Dual-In-Line, SOIC and TSSOP
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
DG308B/309B
Vishay Siliconix
Document Number: 70047
S-52896--Rev. E, 14-Jul-97
www.vishay.com
S
FaxBack 408-970-5600
4-1
Improved Quad CMOS Analog Switches
FEATURES
BENEFITS
APPLICATIONS
D "
22-V Supply Voltage Rating
D
CMOS Compatible Logic
D
Low On-Resistance--r
DS(on)
: 45
W
D
Low Leakage--I
D(on)
: 20 pA
D
Single Supply Operation Possible
D
Extended Temperature Range
D
Fast Switching--t
ON
: < 200 ns
D
Low Glitching--Q: 1 pC
D
Wide Analog Signal Range
D
Simple Logic Interface
D
Higher Accuracy
D
Minimum Transients
D
Reduced Power Consumption
D
Superior to DG308A/309
D
Space Savings (TSSOP)
D
Industrial Instrumentation
D
Test Equipment
D
Communications Systems
D
Disk Drives
D
Computer Peripherals
D
Portable Instruments
D
Sample-and-Hold Circuits
DESCRIPTION
The DG308B/309B analog switches are highly improved
versions of the industry-standard DG308A/309. These
devices are fabricated in Vishay Siliconix' proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design minimizes
switching transients. The DG308B and DG309B can handle
up to
"
22-V input signals. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
The DG308B is a normally open switch and the DG309B is a
normally closed switch. (See Truth Table.)
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
Logic
DG308B
DG309B
0
OFF
ON
1
ON
OFF
Logic "0"
v
3.5V
Logic "1"
w
11 V
ORDERING INFORMATION
Temp Range
Package
Part Number
40
85
_
C
16-Pin Plastic DIP
DG308BDJ
40
85
_
C
16-Pin Plastic DIP
DG309BDJ
40 to 85
_
C
16-Pin Narrow SOIC
DG308BDY
40 to 85
_
C
16-Pin Narrow SOIC
DG309BDY
16-Pin TSSOP
DG308BDQ
16-Pin TSSOP
DG309BDQ
55
125
_
C
16 Pi C DIP
DG308BAK
55 to 125
_
C
16-Pin CerDIP
DG308BAK/883
55 to 125
_
C
16-Pin CerDIP
DG309BAK
DG309BAK/883
DG308B/309B
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
4-2
Document Number: 70047
S-52896--Rev. E, 14-Jul-97
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V
V+
44 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs
a
V
S
, V
D
(V) 2 V to (V+) +2 V
. . . . . . . . . . . . . . . . . . . . . . . . . .
or 30 mA, whichever occurs first
Current, Any Terminal
30 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max)
100 mA
. . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
(AK, Suffix)
65 to 150
_
C
. . . . . . . . . . . . . . . . .
(DJ, DY, DQ Suffix)
65 to 125
_
C
. . . . . . . . . .
Power Dissipation (Package)
b
16-Pin Plastic DIP
c
470 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin Narrow SOIC and TSSOP
d
640 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin CerDIP
e
900 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on S
X
, D
X
, or IN
X
exceeding V+ or V will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b.
All leads welded or soldered to PC Board.
c.
Derate 6.5 mW/
_
C above 75
_
C
d.
Derate 7.6 mW/
_
C above 75
_
C
e.
Derate 12 mW/
_
C above 75
_
C
SPECIFICATIONS
a
Test Conditions
Unless Specified
A Suffix
55 to 125
_
C
D Suffix
40 to 85
_
C
Parameter
Symbol
V+ = 15 V, V = 15 V
V
IN
= 11 V, 3.5 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Analog Switch
Analog Signal Range
e
V
ANALOG
Full
-15
15
-15
15
V
Drain-Source On-Resistance
r
DS(on)
V
D
=
"
10 V, I
S
= 1 mA
Room
Full
45
85
100
85
100
W
r
DS(on)
Match
D
r
DS(on)
D
S
Room
2
%
Source Off Leakage Current
I
S(off)
V
S
=
"
14 V, V
D
=
#
14 V
Room
Full
"
0.01
-0.5
-20
0.5
20
-0.5
5
0.5
5
A
Drain Off Leakage Current
I
D(off)
V
D
=
"
14 V, V
S
=
#
14 V
Room
Full
"
0.01
-0.5
-20
0.5
20
-0.5
5
0.5
5
nA
Drain On Leakage Current
I
D(on)
V
S
= V
D
=
"
14 V
Room
Full
"
0.02
-0.5
-40
0.5
40
0.5
10
0.5
10
Digital Control
Input Voltage High
V
INH
Full
11
11
V
Input Voltage Low
V
INL
Full
3.5
3.5
V
Input Current
I
INH
or I
INL
V
INH
or V
INL
Full
1
1
1
1
m
A
Input Capacitance
C
IN
Room
5
pF
Dynamic Characteristics
Turn-On Time
t
ON
V
S
= 3 V, See Figure 2
Room
200
200
ns
Turn-Off Time
t
OFF
V
S
= 3 V, See Figure 2
Room
150
150
ns
Charge Injection
Q
C
L
= 1000 pF, V
g
= 0 V,
R
g
= 0
W
Room
1
pC
Source-Off Capacitance
C
S(off)
V
S
= 0 V, f = 1 MHz
Room
5
F
Drain-Off Capacitance
C
D(off)
V
S
= 0 V, f = 1 MHz
Room
5
pF
Channel On Capacitance
C
D(on)
V
D
= V
S
= 0 V, f = 1 MHz
Room
16
Off Isolation
OIRR
C
L
= 15 pF, R
L
= 50
W
Room
90
dB
Channel-to-Channel
Crosstalk
X
TALK
C
L
= 15 pF, R
L
= 50
W
V
S
= 1 V
RMS
, f = 100 kHz
Room
95
dB
DG308B/309B
Vishay Siliconix
Document Number: 70047
S-52896--Rev. E, 14-Jul-97
www.vishay.com
S
FaxBack 408-970-5600
4-3
SPECIFICATIONS
a
Test Conditions
Unless Specified
A Suffix
55 to 125
_
C
D Suffix
40 to 85
_
C
Parameter
Symbol
V+ = 15 V, V = 15 V
V
IN
= 11 V, 3.5 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Power Supply
Positive Supply Current
I+
V
IN
= 0 or 15 V
Room
Full
1
5
1
5
m
A
Negative Supply Current
I
V
IN
= 0 or 15 V
Room
Full
-1
-5
-1
-5
m
A
Power Supply Range for
Continuous Operation
V
OP
Full
"
4
"
22
"
4
"
22
V
SPECIFICATIONS
a
FOR SINGLE SUPPLY
Test Conditions
Unless Specified
A Suffix
55 to 125
_
C
D Suffix
40 to 85
_
C
Parameter
Symbol
V+ = 12 V, V = 0 V
V
IN
= 11 V, 3.5 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Analog Switch
Analog Signal Range
e
V
ANALOG
Full
0
12
0
12
V
Drain-Source
On-Resistance
r
DS(on)
V
D
= 3 V, 8 V, I
S
= 1 mA
Room
Full
90
160
200
160
200
W
Dynamic Characteristics
Turn-On Time
t
ON
V
S
= 8 V, See Figure 2
Room
300
300
ns
Turn-Off Time
t
OFF
V
S
= 8 V, See Figure 2
Room
200
200
ns
Charge Injection
Q
C
L
= 1 nF, V
gen
= 6 V, R
gen
= 0
W
Room
4
pC
Power Supply
Positive Supply Current
I+
V
IN
= 0 or 12 V
Room
Full
1
5
1
5
m
A
Negative Supply Current
I
V
IN
= 0 or 12 V
Room
Full
-1
-5
-1
-5
m
A
Power Supply Range for
Continuous Operation
V
OP
Full
4
44
4
44
V
Notes:
a.
Refer to PROCESS OPTION FLOWCHART.
b.
Room = 25
_
C, Full = as determined by the operating temperature suffix.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.
Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
DG308B/309B
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
4-4
Document Number: 70047
S-52896--Rev. E, 14-Jul-97
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20 16 12
8
4
0
4
8
12
16
20
40
50
60
70
80
90
100
110
0
10
20
30
40
50
15
10
5
0
5
10
15
0
2
4
6
8
10
12
14
16
0
25
50
75
100
125
150
175
200
225
"
5 V
r
DS(on)
vs. V
D
and Power Supply Voltages
V
D
Drain Voltage (V)
"
10 V
"
15 V
"
20 V
r
DS(on)
vs. V
D
and Temperature
V
D
Drain Voltage (V)
125
_
C
85
_
C
25
_
C
55
_
C
V+ = 15 V
V = 15 V
r
DS(on)
vs. V
D
and Single Power Supply Voltages
V
D
Drain Voltage (V)
30
20
10
60
70
80
90
100
250
V+ = 5 V
7 V
10 V
12 V
15 V
I
D(on)
20
15
10
5
0
5
10
15
20
Analog Voltage
Leakage Currents vs. Analog Voltage
I
S,
I
D
Current (pA)
55
25
45
5
15
65
35
85
105 125
V+ = 15 V
V = 15 V
V
S,
V
D
=
"
14 V
I
S(off)
, I
D(off)
1 nA
10 pA
1 pA
Temperature (
_
C)
15
10
5
0
5
10
15
30
20
10
0
10
20
30
V+ = 15 V
V = 15 V
V+ = 12 V
V = 0 V
Analog Voltage (V)
Q Charge (pC)
Q
S,
Q
D
Charge Injection vs. Analog Voltage
I
S,
I
D
Current
100 pA
Leakage Currents vs. Temperature
r DS(on)
Drain-Source On-Resistance (
)
W
r DS(on)
Drain-Source On-Resistance (
)
W
40
30
20
10
0
10
20
30
40
I
S(off)
, I
D(off)
V+ = 22 V
V = 22 V
T
A
= 25
_
C
r DS(on)
Drain-Source On-Resistance (
)
W
DG308B/309B
Vishay Siliconix
Document Number: 70047
S-52896--Rev. E, 14-Jul-97
www.vishay.com
S
FaxBack 408-970-5600
4-5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10 k
100 k
1 M
10 M
40
50
60
70
80
90
100
110
120
f Frequency (Hz)
Off Isolation vs. Frequency
OIRR (dB)
V+ = 15 V
V = 15 V
R
L
= 50
W
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
FIGURE 1.
D
X
S
X
V+
IN
X
V
Level
Shift/
GND
V+
V
Drive
TEST CIRCUITS
FIGURE 2. Switching Time
50%
0 V
12 V
t
OFF
t
ON
V
O
t
r
<20 ns
t
f
<20 ns
Logic
Input
Switch
Output
90%
C
L
35 pF
R
L
1 k
W
V
O
= V
S
R
L
+ r
DS(on)
R
L
V
S
= +3 V
V
O
V
V+
IN
S
D
12 V
15 V
GND
+15 V
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