DG9414/9415
Vishay Siliconix
Document Number: 71766
S-03220--Rev. F, 17-Feb-03
www.vishay.com
1
Single 4 x 1 and Dual 2 x 1 Multiplexers
FEATURES
D
Low Voltage Operation (+2.7 to +12 V)
D
Low On-Resistance - r
DS(on
): 14
W
D
Low Power Consumption
D
TTL Compatible
D
ESD Protection >2000 V (Method 3015.7)
D
Available in TSSOP-10 (aka MSOP-10)
BENEFITS
D
High Accuracy
D
Simple Logic Interface
D
Reduce Board Space
APPLICATIONS
D
Battery Operated Systems
D
Portable Test Equipment
D
Sample and Hold Circuits
D
Cellular Phones
D
Communication Systems
D
Networking Equipment
DESCRIPTION
The DG9414, a single 4 to 1 multiplexer, and the DG9415, a
dual 2 x 1 multiplexer, are monolithic CMOS analog devices
designed for high performance low voltage operation.
Combining low power, high speed, low on-resistance and
small physical size, the DG9414 and DG9415 are ideal for
portable and battery powered applications requiring high
performance and efficient use of board space.
Both the DG9414 and DG9415 are built on Vishay Siliconix's
low voltage BCD-15 process. Minimum ESD protection, per
Method 3015.7, is 2000 volts. An epitaxial layer prevents
latchup. Break-before-make is guaranteed for DG9415.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
NO
1
V+
COM
1
DG9415DQ
COM
2
NC
1
NO
2
EN
NC
2
1
2
3
4
10
9
8
7
GND
A
0
5
6
Logic
NO
2
V+
NO
3
DG9414DQ
COM
NO
1
NO
0
EN
A
0
1
2
3
4
10
9
8
7
GND
A
1
5
6
Logic
EN
A
1
A
0
ON SWITCH
1
X
X
None
0
0
0
NO
0
0
0
1
NO
1
0
1
0
NO
2
0
1
1
NO
3
X = Don't Care
EN
A
0
ON SWITCH
1
X
None
0
0
NC
1
NC
2
0
1
NO
1
NO
2
X = Don't Care
ORDERING INFORMATION
Temp Range
Package
Part Number
40 to 85
C
MSOP 10
DG9414DQ
-40 to 85
C
MSOP-10
DG9415DQ
DG9414/9415
Vishay Siliconix
www.vishay.com
2
Document Number: 71766
S-03220--Rev. F, 17-Feb-03
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
-0.3 to +13 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
a
-0.3 to (V+ + 0.3 V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (Any terminal)
"
20 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current
"
40 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1ms, 10% duty cycle)
ESD (Method 3015.7)
> 2000 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature (D Suffix)
-65 to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b.
All leads welded or soldered to PC Board.
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85
_
C
Parameter
Symbol
V+ = 3 V,
"
10%, V
IN
= 0.4 or 2.4 V
e
Temp
a
Min
c
Typ
b
Max
c
Unit
Analog Switch
Analog Signal Range
d
V
ANALOG
Full
0
V+
V
On-Resistance
r
ON
V+ 2 7 V V
1 0 V/1 5 V/2 0 V
Room
Full
63
97
101
r
ON
Match
d
D
r
ON
V+ = 2.7 V, V
COM
= 1.0 V/1.5 V/2.0 V
I
NO
or I
NC
= 5 mA
Room
3
11
W
r
ON
Flatness
d, f
r
ON
Flatness
I
NO
or I
NC
= 5 mA
Room
14
33
W
NO or NC Off Leakage Current
g
I
NO/NC(off)
V+ = 3.3 V, V
NO
or V
NC
= 0.3 V / 3 V
Room
Full
-1
-10
1
10
COM Off Leakage Current
g
I
COM(off)
V+ = 3.3 V, V
NO
or V
NC
= 0.3 V / 3 V
V
COM
= 3 V / 0.3 V
Room
Full
-1
-10
1
10
nA
Channel-On Leakage Current
g
I
COM(on)
V+ = 3.3 V
V
COM
= V
NO
or V
NC
= 0.3 V / 3 V
Room
Full
-1
-10
1
10
Digital Control
Input Current
g
I
INL
or I
INH
V
IN
= 0 or V+
Full
-1.0
1.0
m
A
Input High Voltage
d
V
INH
Full
1.6
V
Input Low Voltage
d
V
INL
Full
0.4
V
Dynamic Characteristics
Turn-On Time
t
ON
Room
Full
102
125
142
Turn-Off Time
t
OFF
V
NO
or V
NC
= 1.5 V
Room
Full
45
68
75
ns
Break-Before-Make Time
t
D
Room
7
78
ns
Transition Time
t
trans
V
NO
= 1.5 V/0 V, V
NC
= 0 V/1.5 V
Room
Full
81
128
144
Charge Injection
d
Q
INJ
C
L
= 1 nF, Vgen = 0 V, Rgen = 0
W
Room
3
pC
Off-Isolation
OIRR
R
L
= 50
W
, C
L
= 5 pF, f = 1 MHz
Room
-58
Channel-to-Channel Crosstalk
(DG9415)
X
TALK
R
L
= 50
W
, f = 1 MHz
Room
-64
dB
NO NC Off Capacitance
C
NO(off),
DG9414
Room
11
NO, NC Off Capacitance
C
NO(off),
C
NC(off)
DG9415
Room
10
COM Off Capacitance
C
COM( ff)
f = 1 MHz
DG9414
Room
26
pF
COM Off Capacitance
C
COM(off)
f = 1 MHz
DG9415
Room
13
pF
COM On Capacitance
C
COM( )
DG9414
Room
43
COM On Capacitance
C
COM(on)
DG9415
Room
25
Power Supply
Power Supply Range
V+
2.7
3.3
V
Power Supply Current
h
I+
V+ = 3.3 V, V
IN
= 0 or 3.3 V
Full
1.0
m
A
Notes:
a.
Room = 25
C, Full = as determined by the operating suffix.
b.
Typical values are for design aid only, not guaranteed nor subject to production testing.
c.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d.
Guarantee by design, nor subjected to production test.
e.
V
IN
= input voltage to perform proper function.
f.
Difference of min and max values.
g.
Guaranteed by 12-V leakage testing, not production tested.
h.
Guaranteed by worst case test conditions and not subject to test.
DG9414/9415
Vishay Siliconix
Document Number: 71766
S-03220--Rev. F, 17-Feb-03
www.vishay.com
3
SPECIFICATIONS (V+ = 5 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85
_
C
Parameter
Symbol
V+ = 5 V,
"
10%, V
IN
= 0.8 or 2.4 V
e
Temp
a
Min
c
Typ
b
Max
c
Unit
Analog Switch
Analog Signal Range
d
V
ANALOG
Full
0
V+
V
On-Resistance
r
ON
V 4 5 V V
1 5 V/2 5 V/3 5 V
Room
Full
33
56
60
r
ON
Match
D
r
ON
V+ = 4.5 V, V
COM
= 1.5 V/2.5 V/3.5 V
I
NO
or I
NC
= 10 mA
Room
2
10
W
r
ON
Flatness
f
r
ON
Flatness
I
NO
or I
NC
= 10 mA
Room
10
20
NO or NC Off Leakage Current
g
I
NO/NC(off)
V+ = 5.5 V, V
NO
or V
NC
= 1 V / 4.5 V
Room
Full
-1
-10
1
10
COM Off Leakage Current
g
I
COM(off)
V+ = 5.5 V, V
NO
or V
NC
= 1 V / 4.5 V
V
COM
= 4.5 V / 1 V
Room
Full
-1
-10
1
10
nA
Channel-On Leakage Current
g
I
COM(on)
V+ = 5.5 V, V
COM
= V
NO
or V
NC
= 1 V / 4.5 V
Room
Full
-1
-10
1
10
Digital Control
Input Current
h
I
INL
or I
INH
V
IN
= 0 or V+
Full
-1.0
1.0
m
A
Input High Voltage
d
V
INH
Full
1.8
V
Input Low Voltage
d
V
INL
Full
0.6
V
Dynamic Characteristics
Turn-On Time
h
t
ON
Room
Full
56
77
86
Turn-Off Time
h
t
OFF
V
NO
or V
NC
= 3.0 V
Room
Full
25
46
50
ns
Break-Before-Make Time
h
t
D
Room
7
34
Transition Time
t
trans
V
NO
= 3 V/0 V, V
NC
= 0 V/3 V
Room
Full
47
77
84
ns
Off-Isolation
OIRR
R
L
= 50
W
, C
L
= 5 pF, f = 1 MHz
Room
-58
Channel-to-Channel Crosstalk
(DG9415)
X
TALK
R
L
= 50
W
, f = 1 MHz
Room
-64
dB
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
gen
= 0 V, R
gen
= 0
W
Room
6
pC
NO NC Off Capacitance
C
NO(off),
DG9414
Room
11
NO, NC Off Capacitance
C
NO(off),
C
NC(off)
DG9415
Room
10
COM Off Capacitance
C
COM( ff)
f = 1 MHz
DG9414
Room
25
pF
COM Off Capacitance
C
COM(off)
f = 1 MHz
DG9415
Room
13
pF
COM On Capacitance
C
COM( )
DG9414
Room
42
COM On Capacitance
C
COM(on)
DG9415
Room
24
Power Supply
Power Supply Range
V+
4.5
5.5
V
Power Supply Current
h
I+
V+ = 5.5 V, V
IN
= 0 or 5.5 V
Full
1.0
m
A
Notes:
a.
Room = 25
C, Full = as determined by the operating suffix.
b.
Typical values are for design aid only, not guaranteed nor subject to production testing.
c.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d.
Guarantee by design, nor subjected to production test.
e.
V
IN
= input voltage to perform proper function.
f.
Difference of min and max values.
g.
Guaranteed by 12-V leakage testing, not production tested.
h.
Guaranteed by worst case test conditions and not subject to test.
DG9414/9415
Vishay Siliconix
www.vishay.com
4
Document Number: 71766
S-03220--Rev. F, 17-Feb-03
SPECIFICATIONS (V+ = 12 V)
Test Conditions Unless Specified
V V V V V
e
Limits
-40 to 85
_
C
Parameter
Symbol
V+ = 12 V, V
IN
= 0.8 V, 2.4 V
e
Temp
a
Min
c
Typ
b
Max
c
Unit
Analog Switch
Analog Signal Range
d
V
ANALOG
Full
0
12
V
r
ON
Match
D
r
ON
Room
1
9
r
ON
Flatness
d, f
r
ON
Flatness
Room
1
10
W
On-Resistance
r
ON
V+ = 10.8 V, I
NO
, I
NC
= 25 mA, V
COM
= 2/9 V
Room
Full
14
17
19
Switch Off
I
NO(off),
I
NC(off)
V
COM
= 1/11 V
Room
Full
-1
-10
1
10
Switch Off
Leakage Current
I
COM(off)
V
COM
= 1/11 V
V
NO
, V
NC
= 11/1 V
Room
Full
-1
-10
1
10
nA
Channel On
Leakage Current
I
COM(on)
V
NO
, V
NC
= V
COM
=
11/1 V
Room
Full
-1
-10
1
10
Digital Control
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full
-1
1
m
A
Input High Voltage
d
V
INH
Full
2.4
V
Input Low Voltage
d
V
INL
Full
0.8
V
Dynamic Characteristics
Turn-On Time
h
t
ON
R
L
= 300
W
, C
L
= 35 pF
Room
Full
33
55
59
Turn-Off Time
h
t
OFF
R
L
= 300
W
, C
L
= 35 pF
V
NO
, V
NC
= 5 V See Figure 2
Room
Full
17
40
41
ns
Break-Before-Make Time Delay
h
t
D
DG419L Only, V
NC
, V
NO
= 5 V
R
L
= 300
W
, C
L
= 35 pF
Room
2
24
ns
Transition Time
t
trans
V
NO
= 5 V/0 V, V
NC
= 0 V/5 V
Room
Full
29
56
59
Charge Injection
d
Q
INJ
V
g
= 0 V, R
g
= 0
W
, C
L
= 1 nF
Room
13
pC
Off Isolation
d
OIRR
R
L
= 50
W
, C
L
= 5 pF
Room
-58
dB
Channel-to-Channel Crosstalk
d
X
TALK
R
L
= 50
W
, C
L
= 5 pF
f = 1 MHz
Room
-64
dB
NO NC Off Capacitance
d
C
NO(off),
DG9414
Room
10
NO, NC Off Capacitance
d
C
NO(off),
C
NC(off)
DG9415
Room
10
COM Off Capacitance
C
COM( ff)
V
IN
= 0 or V+ f = 1 MHz
DG9414
Room
24
pF
COM Off Capacitance
C
COM(off)
V
IN
= 0 or V+, f = 1 MHz
DG9415
Room
13
pF
COM On Capacitance
d
C
OM( )
DG9414
Room
40
COM On Capacitance
d
C
OM(on)
DG9415
Room
23
Power Supplies
Positive Supply Current
I+
V
IN
= 0 or 12 V
Full
1
m
A
Notes:
a.
Room = 25
C, Full = as determined by the operating suffix.
b.
Typical values are for design aid only, not guaranteed nor subject to production testing.
c.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d.
Guarantee by design, nor subjected to production test.
e.
V
IN
= input voltage to perform proper function.
f.
Difference of min and max values.
g.
Guaranteed by 12-V leakage testing, not production tested.
h.
Guaranteed by worst case test conditions and not subject to test.
DG9414/9415
Vishay Siliconix
Document Number: 71766
S-03220--Rev. F, 17-Feb-03
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1
10
100
1000
10000
-60
-40
-20
0
20
40
60
80
100
0
10
20
30
40
50
60
70
80
0
3
6
9
12
V+ = 3.0 V
I
S
= 5 mA
r
ON
vs. V
COM
and Supply Voltage
r
ON
vs. Analog Voltage and Temperature
V
COM
- Analog Voltage (V)
Temperature (
_
C)
Supply Current (nA)
Supply Current vs. Temperature
Leakage Current vs. Temperature
Temperature (
_
C)
-
On-Resistance (
r
ON
W
)
V+ = 5.0 V
I
S
= 10 mA
V+ = 12.0 V
I
S
= 25 mA
Leakage Current (pA)
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
A = 85
_
C
B = 25
_
C
C = -40
_
C
T = 25
_
C
-
On-Resistance (
r
ON
W
)
V
COM
- Analog Voltage (V)
A
C
A
B
C
I+ -
1
10
100
1000
-60
-40
-20
0
20
40
60
80
100
I
COM(off)
V+ = 12 V
V+ = 3.0 V
I
S
= 5 mA
A
B
C
B
V+ = 5.0 V
V+ = 12.0 V
Supply Current vs. Input Switching Frequency
Input Switching Frequency (Hz)
10
100
1 K
10 K
100 K
1 M
10 M
1 n
10 n
100 n
m
m
m
1 m
10 m
1
10
100
Supply Current (nA)
I+ -
V
AX
, V
EN
= 0 V
I
COM(on)
I
NO(off)
, I
NC(off)
-100
-60
-20
20
60
100
0
2
4
6
8
10
12
Leakage vs. Analog Voltage
V
COM
, V
NO
, V
NC
- Analog Voltage (V)
I
COM(on)
Leakage Current (pA)
V+ = 12.0 V
I
NO(off)
/I
NC(off)
I
COM(off)
V+ = 5.0 V
I
S
= 10 mA
V+ = 12.0 V
I
S
= 25 mA
V+ = 12 V
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