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IL211AT/ 212AT/ 213AT
Document Number 83615
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
1
i179002
1
2
3
4
A
K
NC
NC
8
7
6
5
NC
B
C
E
Pb
Pb-free
e3
Optocoupler, Phototransistor Output, With Base Connection in
SOIC-8 package
Features
Isolation Voltage, 3000 V
RMS
Industry Standard SOIC-8A Surface Mountable
Package
Compatible with Dual Wave, Vapor Phase and IR
Reflow Soldering
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
UL1577, File No. E52744 System Code Y
DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Description
The IL211AT/ IL212AT/ IL213AT are optically cou-
pled pairs with a Gallium Arsenide infrared LED and
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the device
while maintaining a high degree of electrical isolation
between input and output. The IL211AT/ IL212AT/
IL213AT comes in a standard SOIC-8 small outline
package for surface mounting which makes it ideally
suited for high density applications with limited space.
In addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
A choice of 20, 50, and 100 % minimum CTR at
I
F
= 10 mA makes these optocouplers suitable for a
variety of different applications.
Order Information
Available only on Tape and Reel Option
(Conforms to EIA Standard RS481A)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Part
Remarks
IL211AT
CTR > 20 %, SOIC-8
IL212AT
CTR > 50 %, SOIC-8
IL213AT
CTR > 100 %, SOIC-8
Parameter
Test condition
Symbol
Value
Unit
Peak reverse voltage
V
R
6.0
V
Forward continuous current
I
F
60
mA
Power dissipation
P
diss
90
mW
Derate linearly from 25
1.2
mW/C
www.vishay.com
2
Document Number 83615
Rev. 1.5, 26-Oct-04
IL211AT/ 212AT/ 213AT
Vishay Semiconductors
Output
Coupler
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown voltage
BV
CEO
30
V
Emitter-collector breakdown voltage
BV
ECO
7.0
V
Collector-base breakdown voltage
V
CEO
70
V
I
CMAX DC
I
CMAX DC
50
mA
I
CMAX
t < 1.0 ms
I
CMAX
100
mA
Power dissipation
P
diss
150
mW
Derate linearly from 25 C
2.0
mW/C
Parameter
Test condition
Symbol
Value
Unit
Total package dissipation
(LED + Detector)
P
tot
240
mW
Derate linearly from 25 C
3.2
mW/C
Storage temperature
T
stg
- 55 to +150
C
Operating temperature
T
amb
- 55 to +100
C
Soldering time at 260 C
10
sec.
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 10 mA
V
F
1.3
1.5
V
Reverse current
V
R
= 6.0 V
I
R
0.1
100
A
Capacitance
V
R
= 0
C
O
13
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown
voltage
I
C
= 10
A
BV
CEO
30
V
Emitter-collector breakdown
voltage
I
E
= 10
A
BV
ECO
7.0
V
Collector dark current
V
CE
= 10 V
I
CEO
5.0
50
nA
Collector-emitter capacitance
V
CE
= 0
C
CE
10
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Saturation voltage, collector-emitter
I
F
= 10 mA
V
CEsat
0.4
V
Isolation test voltage
1 sec.
V
ISO
3000
V
RMS
Capacitance (input-output)
C
IO
0.5
50
pF
Resistance input to output
R
IO
100
G
Collector-emitter breakdown voltage
I
C
= 10
A
BV
CEO
30
V
IL211AT/ 212AT/ 213AT
Document Number 83615
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
3
Current Transfer Ratio
Switching Characteristics
Typical Characteristics (Tamb = 25
C unless otherwise specified)
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Current Transfer Ratio
I
F
= 10 mA, V
CE
= 5.0 V
IL211AT
CTR
20
50
%
IL212AT
CTR
50
80
%
IL213AT
CTR
100
130
%
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Switching time
I
C
= 2 mA, R
L
= 100
,
V
CC
= 10 V
t
on
, t
off
3.0
s
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Normalized Non-saturated and Saturated CTR
CE
vs.
LED Current
iil211at_01
IF - Forward Current - mA
100
10
1
.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
V
F
-
F
orward
Voltage
-
V
Ta = -55C
Ta = 25C
Ta = 100C
iil211at_02
.1
10
100
Normalized to:
VCE =10 V
IF =10 mA
TA=25C
1.5
1.0
0.5
0.0
VCE= 5 V
VCE= 0.4 V
IF - LED Current - mA
NCTR
CE
-
N
ormalized
-
C
TR
CE
1
Figure 3. Collector-Emitter Current vs.LED Current
Figure 4. Normalized Collector-Base Photocurrent vs. LED
Current
iil211at_03
.1
1
10
100
IF - LED Current - mA
I CE
-
C
ollector-emitter
Current
-
m
A
TA = 25C
i
VCE= 0.4 V
VCE= 10 V
150
100
50
0
iil211at_04
.1
1
10
100
IF - LED Current - mA
NI
CB
-
N
ormalized
I CB
Normalized to:
VCB = 9.3 V
IF =1 mA
TA = 25iC
100
10
1
.1
www.vishay.com
4
Document Number 83615
Rev. 1.5, 26-Oct-04
IL211AT/ 212AT/ 213AT
Vishay Semiconductors
Figure 5. Normalized Collector-Base Photocurrent vs. LED
Current
Figure 6. Collector-Base Photocurrent vs. LED Current
Figure 7. Collector-Emitter Leakage Current vs.Temp.
iil211at_05
.1
1
10
100
IF - LED Current - mA
NI
CB
-
N
ormalized
I CB
Normalized to:
VCB = 9.3 V
IF =10 mA
TA = 25C
10
1
.1
.01
iil211at_06
IF - LED Current - mA
I CB
-
C
ollector-base
C
urrent
-
A
TA = 25C
VCB = 9.3 V
1000
100
10
1
.1
.1
1
10
100
iil211at_07
TA - Ambient Temperature - C
I CEO
-
C
ollector-emitter
-
nA
105
10 4
10 3
10 2
101
10 0
10 -1
10-2
-20
0
20
40
60
80
100
VCE = 10 V
Typical
Figure 8. Normalized Saturated HFE vs. Base Current and
Temperature
Figure 9. Typical Switching Characteristics vs. Base Resistance
(Saturated Operation)
Figure 10. Typical Switching Times vs. Load Resistance
iil211at_08
1
1 0
100
1000
0.0
0.5
1.0
1.5
2.0
25C
50C
70C
Ib - Base Current - A
NHFE(sat)
-
N
ormalized
Saturated
HFE
Vce = 0.4 V
Ib = 20
A
Vce = 10 V
Ta = 25C
Normalized to:
iil211at_09
100
50
10
5
1.0
Input:
Base-emitter resistance, RBE ()
T
OF
F
T
ON
Switching
time
(
s)
10K
50K
100K
500K
1M
IF=10 mA
Pulse width = 100 mS
Duty cycle = 50%
iil211at_10
1000
500
100
50
10
5
1
0.1
0.5
1
5
10
50 100
Input:
IF =10 mA
Pulse width = 100 mS
Duty cycle = 50%
T OFF
TON
Load resistance RL (K
)
Switching
time
(
S)
IL211AT/ 212AT/ 213AT
Document Number 83615
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in Inches (mm)
Figure 11. Switching Test Circuit
iil211at_11
V
CC
=5 V
Input
VOUT
RL
t
off
t
r
10%
50%
90%
t
s
t
pdoff
t
pdon
t
on
t
r
t
d
OUTPUT
INPUT
10%
50%
90%
0
0
.036 (.91)
.014 (.36)
.170 (4.32)
.045 (1.14)
.260 (6.6)
R .010 (.13)
.050 (1.27)
i178003
40
.240
(6.10)
.154 .005
(3.91 .13)
.050 (1.27)
typ.
.016 (.41)
.192 .005
(4.88 .13)
.004 (.10)
.008 (.20)
Lead
Coplanarity
.0015 (.04) max.
.015 .002
(.38 .05)
.008 (.20)
7
.058 .005
(1.49 .13)
.125 .005
(3.18 .13)
Pin One ID
.120 .005
(3.05 .13)
CL
.021 (.53)
5 max.
R.010
(.25) max.
.020 .004
(.51 .10)
2 plcs.
ISO Method A
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