ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Document Number 83647
Rev. 1.4, 26-Oct-04
Vishay Semiconductors
www.vishay.com
1
i179018
A 1
C 2
A 3
C 4
8 C
7 E
6 C
5 E
Pb
Pb-free
e3
Optocoupler, Phototransistor Output, Dual Channel, SOIC-8
package
Features
Two Channel Coupler
SOIC-8A Surface Mountable Package
Standard Lead Spacing of .05 "
Available only on Tape and Reel Option (Con-
forms to EIA Standard 481-2)
Isolation Test Voltage, 3000 V
RMS
Compatible with Dual Wave, Vapor Phase and IR
Reflow Soldering
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
UL1577, File No. E52744 System Code Y
Description
The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T are
optically coupled pairs with a Gallium Arsenide infra-
red LED and a silicon NPN phototransistor. Signal
information, including a DC level, can be transmitted
by the device while maintaining a high degree of elec-
trical isolation between input and output. The
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T come in a
standard SOIC-8A small outline package for surface
mounting which makes it ideally suited for high den-
sity applications with limited space. In addition to elim-
inating through-holes requirements, this package
conforms to standards for surface mounted devices.
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the adja-
cent circuits. The high BV
CEO
of 70 V gives a higher
safety margin compared to the industry standard of
30 V.
Order Information
For additional information on the available options refer to
Option Information.
Part
Remarks
ILD205T
CTR 40 - 80 %, SOIC-8
ILD206T
CTR 63 - 125 %, SOIC-8
ILD207T
CTR 100 - 200 %, SOIC-8
ILD211T
CTR > 20 %, SOIC-8
ILD213T
CTR > 100 %, SOIC-8
ILD217T
CTR > 100 %, SOIC-8
www.vishay.com
2
Document Number 83647
Rev. 1.4, 26-Oct-04
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Value
Unit
Peak reverse voltage
V
R
6.0
V
Peak pulsed current
1.0
s, 300 pps
1.0
A
Continuous forward current per
channel
30
mA
Power dissipation
P
diss
50
mW
Derate linearly from 25 C
0.66
mW/C
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown voltage
BV
CEO
70
V
Emitter-collector breakdown voltage
BV
ECO
7.0
V
Power dissipation per channel
P
diss
125
mW
Derate linearly from 25 C
1.67
mW/C
Parameter
Test condition
Symbol
Value
Unit
Total package dissipation
ambient (2 LEDs + 2 detectors,
2 channels)
P
tot
300
mW
Derate linearly from 25 C
4.0
mW/C
Storage temperature
T
stg
- 55 to + 150
C
Operating temperature
T
amb
- 55 to + 100
C
Soldering time from 260 C
T
sld
10
sec.
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 10 mA
V
F
1.2
1.55
V
Reverse current
V
R
= 6.0 V
I
R
0.1
100
A
Capacitance
V
R
= 0
C
O
25
pF
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Document Number 83647
Rev. 1.4, 26-Oct-04
Vishay Semiconductors
www.vishay.com
3
Output
Coupler
Current Transfer Ratio
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown
voltage
I
C
= 10
A
BV
CEO
70
V
Emitter-collector breakdown
voltage
I
E
= 10
A
BV
ECO
7.0
V
Collector-emitter leakage
current
V
CE
= 10 V, I
F
= 0
I
CEO
5.0
50
nA
Collector-emitter capacitance
V
CE
= 0
C
CE
10
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter saturation
voltage
I
F
= 10 mA, I
C
= 2.5 mA
V
CE(sat)
0.4
V
Capacitance (input-output)
C
IO
0.5
pF
Isolation test voltage
t = 1.0 sec.
V
ISO
3000
V
RMS
Resistance, input to output
R
IO
100
G
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
DC Current Transfer Ratio
V
CE
= 5.0 V, I
F
= 10 mA
ILD205T
CTR
DC
40
80
%
ILD206T
CTR
DC
63
125
%
ILD207T
CTR
DC
100
200
%
ILD211T
CTR
DC
20
%
ILD213T
CTR
DC
100
%
V
CE
= 5.0 V, I
F
= 1.0 mA
ILD205T
CTR
DC
13
30
%
ILD206T
CTR
DC
22
45
%
ILD207T
CTR
DC
34
70
%
ILD217T
CTR
DC
100
120
%
www.vishay.com
4
Document Number 83647
Rev. 1.4, 26-Oct-04
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Switching Characteristics
Typical Characteristics (Tamb = 25
C unless otherwise specified)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Turn-on time
I
C
= 2.0 mA, R
L
= 100
,
V
CC
= 5.0 V
t
on
5.0
s
Turn-off time
I
C
= 2.0 mA, R
L
= 100
,
V
CC
= 5.0 V
t
off
4.0
s
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Collector-Emitter Current vs. Temperature
Vf - LED Forward Voltage (V)
If
-
LED
Current
(ma)
iild205t_01
iild205t_02
0
2
4
6
8
10
12
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VCE-Collector to Emitter Voltage (V)
NIc
Normalized
Collector
Current
IF=10 mA
IF=5 mA
IF=1 mA
Coll current normalized @ I
F
=10 mA
V
CE
=10 V
Figure 3. Normalized CTR
ce
vs. Forward Current
Figure 4. Current Transfer Ratio (normalized) vs. Ambient
Temperature
iild205t_03
NCTRce
-
Normalized
CTRce
.01
.1
1
10
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IF - LED Current - (mA)
VCE=5 V
CTR normalized @
IF = 10 mA
VCE=0.4 V
iild205t_04
20
40
60
80
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
TA - Temperature (C)
NCTRce
-
normalized
CTRce
IF=5 mA
IF=1 mA
IF=10 mA
CTR nonsat normalized @
I
F
=10 mA
V
CE
=10 V
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Document Number 83647
Rev. 1.4, 26-Oct-04
Vishay Semiconductors
www.vishay.com
5
Figure 5. Switching Speed vs. Load Resistor
Figure 6. Collector Current vs. Ambient Temperature
iild205t_01
Switching
speed
(
s)
.1
1
10
100
10 3
10 2
10 1
10 0
Rl - Load Resistor (K
)
IF=10 mA
Pulse width=100 ms
Duty cycle=50%
To ff
To n
Ta - Temperature (C)
Iceo-Leakage
Current
-
(
a)
iild205t_06
Vce=50 V
Vce=50 V
Figure 7. Power Dissipation vs. Ambient Temperature
iild205t_07
200
150
100
50
0
TA - Ambient Temperature (C)
Package
Power
Dissipation
(mw)
25
50
75
100
125
Total pkg
per channel
Figure 8. Switching Test Circuit
iild205t_08
t
off
t
r
10%
50%
90%
t
s
t
pdoff
t
pdon
t
on
t
r
t
d
Output
Input
10%
50%
90%
Input
VOUT
VCC=5 V
RL
www.vishay.com
6
Document Number 83647
Rev. 1.4, 26-Oct-04
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Package Dimensions in Inches (mm)
.036 (.91)
.014 (.36)
.170 (4.32)
.045 (1.14)
.260 (6.6)
R .010 (.13)
.050 (1.27)
i178020
ISO Method A
40
.240
(6.10)
.050(1.27) Typ.
.016 (.41)
.004 (.10)
.008 (.20)
Lead coplanarity
.001 Max.
.008 (.20)
7
.120.002
(3.05.05)
CL
R.010
(.25) Max.
.040 (1.02)
5 Max.
Pin One I.D.
.154.002
(3.91.05)
.015.002
(.38.05)
.230.002
(5.84.05)
.020.004
(.51.10)
2 Plcs.
.0585.002
(1.49.05)
.125.002
(3.18.05)
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Document Number 83647
Rev. 1.4, 26-Oct-04
Vishay Semiconductors
www.vishay.com
7
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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