VISHAY
ILD3/ ILQ3
Document Number 83655
Rev. 1.3, 19-Apr-04
Vishay Semiconductors
www.vishay.com
1
i179012
1
2
3
4
8
7
6
5
E
C
C
E
A
C
C
A
A
C
C
A
A
C
C
A
E
C
C
E
E
C
C
E
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
Dual Channel
Quad Channel
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Features
Current Transfer Ratio at I
F
= 1.6 mA
Double Molded Package Offers Isolation Test
Voltage 5300 V
RMS
, 1.0 sec.
Agency Approvals
UL - File No. E52744 System Code H or J
CSA 93751
BSI IEC60950 IEC60965
FIMKO
Description
The ILD3/ ILQ3 are optically coupled isolated pairs
employing GaAs infrared LEDs and silicon NPN pho-
totransistors. Signal information, including a DC level,
can be transmitted by the drive while maintaining a
high degree of electrical isolation between input and
output. The ILD3/ ILQ3 are especially designed for
driving medium-speed logic and can be used to elim-
inate troublesome ground loop and noise problems.
Also these couplers can be used to replace relays and
transformers in many digital interface applications
such as CTR modulation. The ILD3 has two isolated
channels in a single DIP package and the ILQ3 has
four isolated channels per package.
Order Information
For additional information on the available options refer to
Option Information.
Part
Remarks
ILD3
CTR > 500 %, Dual Channel DIP-8
ILQ3
CTR > 500 %, Quad Channel DIP-16
www.vishay.com
2
Document Number 83655
Rev. 1.3, 19-Apr-04
VISHAY
ILD3/ ILQ3
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter
Test condition
Symbol
Value
Unit
Reverse current
V
R
6.0
V
Forward continuous current
I
F
60
mA
Surge current
I
FSM
2.5
A
Power dissipation
P
diss
100
mW
Derate linearly from 25 C
1.3
mW/C
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown
voltage
BV
CEO
50
V
Collector current
I
C
50
mA
t < 1.0 ms
I
C
400
mA
Power dissipation
P
diss
200
mW
Derate linearly from 25 C
2.6
mW/C
Parameter
Test condition
Symbol
Value
Unit
Isolation test voltage (between
emitter and detector, refer to
standard climate 23C/50% RH,
DIN50014)
t = 1 sec.
V
ISO
5300
V
RMS
Creepage
7
mm
Clearance
7
mm
Isolation resistance
V
IO
= 500 V, T
amb
= 25 C
R
IO
10
12
V
IO
= 500 V, T
amb
= 100 C
R
IO
10
11
Power dissipation
P
tot
250
mW
Derate linearly from 25 C
3.3
mW/C
Storage temperature range
T
stg
- 40 to + 150
C
Operating temperature range
T
amb
- 40 to + 100
C
Junction temperature
T
j
100
C
Soldering temperature
2.0 mm case bottom
T
sld
260
C
VISHAY
ILD3/ ILQ3
Document Number 83655
Rev. 1.3, 19-Apr-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Current Transfer Ratio
Common Mode Transient Immunity
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 60 mA
V
F
1.25
1.65
V
Reverse current
V
R
= 6.0 V
I
R
0.01
10
A
Capacitance
V
R
= 0 V, f = 1.0 MHz
25
pF
Thermal resistance, junction to
lead
R
thjl
750
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter leakage
current
V
CE
= 15 V
I
CEO
5.0
70
nA
Collector-emitter capacitance
V
CE
= 5.0 V, f = 1.0 MHz
C
CE
6.8
pF
Thermal resistance, junction to
lead
R
thjl
500
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Capacitance (input-output)
V
IO
= 0 V, f = 1.0 MHz
C
IO
0.8
pF
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Saturated Current Transfer
Ratio (ILD/Q3-1)
I
F
= 1.6 mA, V
CE
= 0.4 V
ILD3
CTR
sat
300
%
Saturated Current Transfer
Ratio (ILD/Q3-2)
I
F
= 1.0 mA, V
CE
= 0.4 V
ILD3
CTR
sat
100
%
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Common mode rejection output
high
V
CM
= 50 V
P-P
, R
L
= 10 K
,
I
F
= 0 mA
CM
H
5000
V/
s
Common mode rejection output
low
V
CM
= 50 V
P-P
, R
L
= 10 K
I
F
= 0 mA
CM
L
5000
V/
s
Common mode coupling
capacitance
C
CM
0.01
pF
www.vishay.com
4
Document Number 83655
Rev. 1.3, 19-Apr-04
VISHAY
ILD3/ ILQ3
Vishay Semiconductors
Package Dimensions in Inches (mm)
Package Dimensions in Inches (mm)
i178006
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4 typ.
.100 (2.54) typ.
10
39
.300 (7.62)
typ.
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4
3
2
1
.031 (0.79)
.050 (1.27)
5
6
7
8
ISO Method A
.255 (6.48)
.265 (6.81)
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
4
.100 (2.54)typ.
10
typ.
39
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
pin one ID
.130 (3.30)
.150 (3.81)
.020(.51)
.035 (.89)
8
7
6
5
4
3
2
1
9
10
11 12
13
14
15
16
.031(.79)
.300 (7.62)
typ.
.230 (5.84)
.250 (6.35)
.050 (1.27)
i178007
ISO Method A
VISHAY
ILD3/ ILQ3
Document Number 83655
Rev. 1.3, 19-Apr-04
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
PDF 
ZIP