ChipFind - документация

Электронный компонент: ILD30

Скачать:  PDF   ZIP
IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55
Document Number 83621
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
1
i179011
1
2
3
6
5
4
B
C
E
A
C
NC
8
7
6
5
E
C
C
E
A
C
C
A
1
2
3
4
E
C
C
E
E
C
C
E
A
C
C
A
A
C
C
A
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Single Channel
Dual Channel
Quad Channel
Pb
Pb-free
e3
Optocoupler, Photodarlington Output (Single, Dual, Quad
Channel)
Features
125 mA Load Current Rating
Fast Rise Time, 10
s
Fast Fall Time, 35
s
Single, Dual and Quad Channel
Solid State Reliability
Standard DIP Packages
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
UL1577, File No. E52744 System Code H or J,
Double Protection
DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
BSI IEC60950 IEC60065
FIMKO
Description
The IL30/ IL31/ IL55 single, ILD30/ ILD31/ ILD55
dual, and ILQ30/ ILQ31/ ILQ55 quad are optically
coupled isolators with Gallium Arsenide infrared emit-
ters and silicon photodarlington sensors. Switching
can be achieved while maintaining a high degree of
isolation between driving and load circuits, with no
crosstalk between channels. These optocouplers can
be used to replace reed and mercury relays with
advantages of long life, high speed switching and
elimination of magnetic fields.
The IL30/ IL31/ IL55 are equivalent to MCA230/
MCA231/ MCA255. The ILD30/ ILD31/ ILD55 are
designed to reduce board space requirements in high
density applications.
www.vishay.com
2
Document Number 83621
Rev. 1.5, 26-Oct-04
IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55
Vishay Semiconductors
Order Information
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
(each channel)
Output
Part
Remarks
IL30
CTR > 100 %, Single Channel DIP-6
IL31
CTR > 200 %, Single Channel DIP-6
IL55
CTR > 100 %, Single Channel DIP-6
ILD30
CTR > 100 %, Dual Channel DIP-8
ILD31
CTR > 200 %, Dual Channel DIP-8
ILD55
CTR > 100 %, Dual Channel DIP-8
ILQ30
CTR > 100 %, Quad Channel DIP-16
ILQ31
CTR > 200 %, Quad Channel DIP-16
ILQ55
CTR > 100 %, Quad Channel DIP-16
IL55-X009
CTR > 100 %, Single Channel SMD-6 (option 9)
ILD30-X009
CTR > 100 %, Dual Channel SMD-8 (option 9)
ILD31-X007
CTR > 200 %, Dual Channel SMD-8 (option 7)
ILD31-X009
CTR > 200 %, Dual Channel SMD-8 (option 9)
ILD55-X007
CTR > 100 %, Dual Channel SMD-8 (option 7)
ILD55-X009
CTR > 100 %, Dual Channel SMD-8 (option 9)
ILQ30-X009
CTR > 100 %, Quad Channel SMD-16 (option 9)
ILQ55-X007
CTR > 100 %, Quad Channel SMD-16 (option 7)
ILQ55-X009
CTR > 100 %, Quad Channel SMD-16 (option 9)
Parameter
Test condition
Symbol
Value
Unit
Peak reverse voltage
V
RM
3.0
V
Forward continuous current
I
F
60
mA
Power dissipation
P
diss
100
mW
Derate linearly from 25 C
1.33
mW/C
Parameter
Test condition
Part
Symbol
Value
Unit
Collector-emitter breakdown voltage
IL30
BV
CEO
30
V
ILD30
BV
CEO
30
V
ILQ30
BV
CEO
30
V
IL55
BV
CEO
55
V
ILD55
BV
CEO
55
V
ILD55
BV
CEO
55
V
IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55
Document Number 83621
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
3
Coupler
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
GaAs emitter (per channel)
Collector (load) current
I
C
125
mA
Power dissipation
P
diss
150
mW
Derate linearly from 25 C
2.0
mW/C
Parameter
Test condition
Part
Symbol
Value
Unit
Total package power dissipation
IL30
P
tot
250
mW
IL31
P
tot
250
mW
IL55
P
tot
250
mW
ILD30
P
tot
400
mW
ILD31
P
tot
400
mW
ILD55
P
tot
400
mW
ILQ30
P
tot
500
mW
ILQ31
P
tot
500
mW
ILQ55
P
tot
500
mW
Derate linearly from 25 C
IL30
3.3
mW/C
IL31
3.3
mW/C
IL55
3.3
mW/C
ILD30
5.33
mW/C
ILD31
5.33
mW/C
ILD55
5.33
mW/C
ILQ30
6.67
mW/C
ILQ31
6.67
mW/C
ILQ55
6.67
mW/C
Isolation test voltage
V
ISO
5300
V
RMS
Creepage
7.0
mm
Clearance
7.0
mm
Comparative tracking index
175
Storage temperature
T
stg
- 55 to + 125
C
Operating temperature
T
amb
- 55 to + 100
C
Lead soldering time at 260 C
10
sec.
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 20 mA
V
F
1.25
1.5
V
Reverse current
V
R
= 3.0 V
I
R
0.1
10
A
Capacitance
V
R
= 0 V
C
O
25
pF
Parameter
Test condition
Part
Symbol
Value
Unit
www.vishay.com
4
Document Number 83621
Rev. 1.5, 26-Oct-04
IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55
Vishay Semiconductors
Output
per channel
Coupler
Current Transfer Ratio
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown
voltage
I
C
= 100
A
BV
CEO
30/55
V
Collector-emitter leakage
current
V
CE
= 10 V, I
F
= 0
I
CEO
1.0
100
nA
Collector-emitter capacitance
V
CE
= 10 V, f = 1.0 MHz
C
CE
3.4
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter saturation
voltage
I
C
= 50 mA, I
F
= 50 mA
V
CEsat
0.9
1.0
V
Isolation test voltage
5300
V
RMS
Isolation resistance
R
IO
10
12
Capacitance (input-output)
C
IO
0.5
pF
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Current Transfer Ratio
I
F
= 10 mA, V
CE
= 5.0 V
IL30
CTR
100
400
%
IL55
CTR
100
400
%
ILD30
CTR
100
400
%
ILD55
CTR
100
400
%
ILQ30
CTR
100
400
%
ILQ55
CTR
100
400
%
IL31
CTR
200
400
%
ILD31
CTR
200
400
%
ILQ31
CTR
200
400
%
IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55
Document Number 83621
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
5
Switching Characteristics
Typical Characteristics (Tamb = 25
C unless otherwise specified)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Rise time
V
CC
= 13.5 V, I
F
= 50 mA, R
L
= 100
t
r
10
s
Fall time
V
CC
= 13.5 V, I
F
= 50 mA, R
L
= 100
t
f
35
s
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Normalized Non-Saturated and Saturated CTR
CE
vs.
LED Current
iil30_01
IF - Forward Current - mA
100
10
1
.1
0.7
0.8
0.9
1.0
1.1
1.2
1. 3
1.4
VF
-
F
orward
Voltage
-
V
Ta = 55C
Ta = 25C
Ta = 85C
iil30_02
.1
1
10
100
1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Vce =1V
Vce = 5 V
IF - LED Current - mA
NCTRce
-
N
ormalized
CTRce
Vce = 5 V
IF = 10 mA
Normalized to:
Figure 3. Normalized Non-Saturated and Saturated Collector-
Emitter Current vs. LED Current
Figure 4. Normalized Collector-Base Photocurrent vs. LED
Current
iil30_03
100
1
.1
.001
.01
.1
1
10
Vce = 1V
Vce = 5 V
IF - LED Current - mA
NIce
-
Normalized
Ice
IF = 10 mA
Vce = 5 V
Normalized to:
10
iil30_04
.1
1
1 0
100
.001
.01
.1
1
10
IF - LED Current - mA
NIcb
-
N
ormalized
Icb
Vcb = 3.5 V
IF = 10 mA
Normalized to: