VISHAY
ILD615/ ILQ615
Document Number 83652
Rev. 1.3, 19-Apr-04
Vishay Semiconductors
www.vishay.com
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Dual Channel
Quad Channel
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Features
Identical Channel to Channel Footprint
Dual and Quad Packages Feature:
- Reduced Board Space
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
Isolation Test Voltage from Double Molded Pack-
age, 5300 V
RMS
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
UL1577, File No. E52744 System Code H or J,
Double Protection
CSA 93751
BSI IEC60950 IEC60965
DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Description
The ILD615/ ILQ615 are multi-channel phototransis-
tor optocouplers that use GaAs IRLED emitters and
high gain NPN phototransistors. These devices are
constructed using over/under leadframe optical cou-
pling and double molded insulation technology result-
ing a withstand test voltage of 7500 VAC
PEAK
and a
working voltage of 1700 V
RMS
.
The binned min./max. and linear CTR characteristics
make these devices well suited for DC or AC voltage
detection. Eliminating the phototransistor base con-
nection provides added electrical noise immunity from
the transients found in many industrial control envi-
ronments.
Because of guaranteed maximum non-saturated and
saturated switching characteristics, the ILD615/
ILQ615 can be used in medium speed data I/O and
control systems. The binned min./max. CTR specifi-
cation allow easy worst case interface calculations for
both level detection and switching applications. Inter-
facing with a CMOS logic is enhanced by the guaran-
teed CTR at I
F
= 1.0 mA.
www.vishay.com
2
Document Number 83652
Rev. 1.3, 19-Apr-04
VISHAY
ILD615/ ILQ615
Vishay Semiconductors
Order Information
For additional information on the available options refer to
Option Information.
Part
Remarks
ILD615-1
CTR 40 - 80 %, Dual Channel, DIP-8
ILD615-2
CTR 63 - 125 %, Dual Channel, DIP-8
ILD615-3
CTR 100 - 200 %, Dual Channel, DIP-8
ILD615-4
CTR 160 - 320 %, Dual Channel, DIP-8
ILQ615-1
CTR 40 - 80 %, Quad Channel, DIP-16
ILQ615-2
CTR 63 - 125 %, Quad Channel, DIP-16
ILQ615-3
CTR 100 - 200 %, Quad Channel, DIP-16
ILQ615-4
CTR 160 - 320 %, Quad Channel, DIP-16
ILD615-1X007
CTR 40 - 80 %, Dual Channel, SMD-8
(option 7)
ILD615-2X006
CTR 63 - 125 %, Dual Channel, DIP-8 400
mil (option 6)
ILD615-2X009
CTR 63 - 125 %, Dual Channel, SMD-8
(option 9)
ILD615-3X006
CTR 100 - 200 %, Dual Channel, DIP-8
400 mil (option 6)
ILD615-3X007
CTR 100 - 200 %, Dual Channel, SMD-8
(option 7)
ILD615-3X009
CTR 100 - 200 %, Dual Channel, SMD-8
(option 9)
ILD615-4X006
CTR 160 - 320 %, Dual Channel, DIP-8
400 mil (option 6)
ILD615-4X009
CTR 160 - 320 %, Dual Channel, SMD-8
(option 9)
ILQ615-1X009
CTR 40 - 80 %, Quad Channel, SMD-16
(option 9)
ILQ615-2X007
CTR 63 - 125 %, Quad Channel, SMD-16
(option 7)
ILQ615-3X006
CTR 100 - 200 %, Quad Channel, DIP-16
400 mil (option 6)
ILQ615-3X009
CTR 100 - 200 %, Quad Channel, SMD-16
(option 9)
ILQ615-4X007
CTR 160 - 320 %, Quad Channel, SMD-16
(option 7)
ILQ615-4X009
CTR 160 - 320 %, Quad Channel, SMD-16
(option 9)
VISHAY
ILD615/ ILQ615
Document Number 83652
Rev. 1.3, 19-Apr-04
Vishay Semiconductors
www.vishay.com
3
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V
R
6.0
V
Forward current
I
F
60
mA
Surge current
I
FSM
1.5
A
Power dissipation
P
diss
100
mW
Derate linearly from 25 C
1.33
mW/C
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown
voltage
BV
CEO
70
V
Emitter-collector breakdown
voltage
BV
ECO
7.0
V
Collector current
I
C
50
mA
t < 1.0 ms
I
C
100
mA
Power dissipation
P
diss
150
mW
Derate linearly from 25 C
2.0
mW/C
Parameter
Test condition
Symbol
Value
Unit
Storage temperature
T
stg
- 55 to + 150
C
Operating temperature
T
amb
- 55 to + 100
C
Junction temperature
T
j
100
C
Soldering temperature
2.0 mm distance from case
bottom
T
sld
260
C
Package power dissipation,
ILD615
400
mW
Derate linearly from 25 C
5.33
mW/C
Package power dissipation,
ILQ615
500
mW
Derate linearly from 25 C
6.67
mW/C
Isolation test voltage
t = 1.0 sec.
V
ISO
5300
V
RMS
Creepage
7.0
mm
Clearance
7.0
mm
Isolation resistance
V
IO
= 500 V, T
amb
= 25 C
R
IO
10
12
V
IO
= 500 V, T
amb
= 100 C
R
IO
10
11
www.vishay.com
4
Document Number 83652
Rev. 1.3, 19-Apr-04
VISHAY
ILD615/ ILQ615
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Current Transfer Ratio
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 10 mA
V
F
1.0
1.15
1.3
V
Breakdown voltage
I
R
= 10
A
V
BR
6.0
30
V
Reverse current
V
R
= 6.0 V
I
R
0.01
10
A
Capacitance
V
R
= 0 V, f = 1.0 MHz
C
O
25
pF
Thermal resistance, junction to
lead
R
THJL
750
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter capacitance
V
CE
= 5.0 V, f = 1.0 MHz
C
CE
6.8
pF
Collector-emitter leakage
current, -1, -2
V
CE
= 10 V
I
CEO
2.0
50
nA
Collector-emitter leakage
current, -3, -4
V
CE
= 10 V
I
CEO
5.0
100
nA
Collector-emitter breakdown
voltage
I
CE
= 0.5 mA
BV
CEO
70
V
Emitter-collector breakdown
voltage
I
E
= 0.1 mA
BV
ECO
7.0
V
Thermal resistance, junction to
lead
R
THJL
500
K/W
Package transfer characteristics
Channel/Channel CTR match
I
F
= 10 mA, V
CE
= 5.0 V
CTRX/
CTRY
1 to 1
2 to 1
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Capacitance (input-output)
V
IO
= 0 V, f = 1.0 MHz
C
IO
0.8
pF
Insulation resistance
V
IO
= 500 V, T
A
= 25 C
R
S
10
12
10
14
Channel to channel isolation
500
VAC
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Current Transfer Ratio
(collector-emitter saturated)
I
F
= 10 mA, V
CE
= 0.4 V
ILD615-1
ILQ615-1
CTR
CEsat
25
%
ILD615-2
ILQ615-2
CTR
CEsat
40
%
ILD615-3
ILQ615-3
CTR
CEsat
60
%
ILD615-4
ILQ615-4
CTR
CEsat
100
%
VISHAY
ILD615/ ILQ615
Document Number 83652
Rev. 1.3, 19-Apr-04
Vishay Semiconductors
www.vishay.com
5
Switching Non-saturated
Switching Saturated
Common Mode Transient Immunity
Current Transfer Ratio
(collector-emitter)
I
F
= 10 mA, V
CE
= 5.0 V
ILD615-1
ILQ615-1
CTR
CE
40
60
80
%
I
F
= 1.0 mA, V
CE
= 5.0 V
ILD615-2
ILQ615-2
CTR
CE
13
30
%
I
F
= 10 mA, V
CE
= 5.0 V
ILD615-3
ILQ615-3
CTR
CE
63
80
125
%
I
F
= 1.0 mA, V
CE
= 5.0 V
ILD615-4
ILQ615-4
CTR
CE
22
45
%
I
F
= 10 mA, V
CE
= 5.0 V
ILD615-1
ILQ615-1
CTR
CE
100
150
200
%
I
F
= 1.0 mA, V
CE
= 5.0 V
ILD615-2
ILQ615-2
CTR
CE
34
70
%
I
F
= 10 mA, V
CE
= 5.0 V
ILD615-3
ILQ615-3
CTR
CE
160
200
320
%
I
F
= 1.0 mA, V
CE
= 5.0 V
ILD615-4
ILQ615-4
CTR
CE
56
90
%
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Parameter
Current
Turn-on time
Rise time
Turn-off time
Fall time
Propagation
H-L
Propagation
L-H
Test condition
V
CC
= 5.0 V, R
L
= 75
, 50 % of V
PP
Symbol
I
F
t
on
t
r
t
off
t
f
t
PHL
t
PLH
Unit
mA
s
s
s
s
s
s
ILD615-1
10
3.0
2.0
2.3
2.0
1.1
2.5
Parameter
Current
Turn-on time
Rise time
Turn-off time
Fall time
Propagation
H-L
Propagation
L-H
Test condition
V
CC
= 5.0 V, R
L
= 1.0 k
, V
TH
= 1.5 V
Symbol
I
F
t
on
t
r
t
off
t
f
t
PHL
t
PLH
Unit
mA
s
s
s
s
s
s
ILD615-1
ILQ615-1
20
3.0
2.0
18
11
1.6
8.6
ILD615-2
ILQ615-2
10
4.3
2.8
25
14
2.6
7.2
ILD615-3
ILQ615-3
10
4.3
2.8
25
14
2.6
7.2
ILD615-4
ILQ615-4
5.0
6.0
4.6
25
15
5.4
7.4
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Common mode rejection output
high
V
CM
= 50 V
P-P
, R
L
= 1.0 k
,
I
F
= 0 mA
CM
H
5000
V/
s
Common mode rejection output
low
V
CM
= 50 V
P-P
, R
L
= 1.0 k
,
I
F
= 10 mA
CM
L
5000
V/
s
Common mode coupling
capacitance
C
CM
0.01
pF
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