K814P/ K824P/ K844P
Vishay Telefunken
Rev. A4, 11Jan99
161
Optocoupler with Phototransistor Output
Description
The K814P/ K824P/ K844P consist of a phototransis-
tor optically coupled to 2 gallium arsenide
infrared-emitting diodes (reversed polarity) in an
4-lead up to 16-lead plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Feature phones, answering machines, PABX,
fax machines
Features
D
Endstackable to 2.54 mm (0.1') spacing
D
DC isolation test voltage V
IO
= 5 kV
D
Low coupling capacitance of typical 0.3 pF
D
Current Transfer Ratio (CTR) of typical 100%
D
Low temperature coefficient of CTR
D
Wide ambient temperature range
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
CSA (CUL) 1577 recognized, file number
E-76222 Double Protection
D
Coupling System U
14925
Coll. Emitter
Anode Cath.
4 PIN
8 PIN
16 PIN
13947
C
Order Instruction
Ordering Code
CTR Ranking
Remarks
K814P
< 20%
4 Pin Single channel
K824P
< 20%
8 Pin Dual channel
K844P
< 20%
16 Pin Quad channel
K814P/ K824P/ K844P
Vishay Telefunken
Rev. A4, 11Jan99
162
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V
R
6
V
Forward current
I
F
60
mA
Forward surge current
t
p
10
m
s
I
FSM
1.5
A
Power dissipation
T
amb
25
C
P
V
100
mW
Junction temperature
T
j
125
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V
CEO
70
V
Emitter collector voltage
V
ECO
7
V
Collector current
I
C
50
mA
Peak collector current
t
p
/T = 0.5, t
p
10 ms
I
CM
100
mA
Power dissipation
T
amb
25
C
P
V
150
mW
Junction temperature
T
j
125
C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
AC Isolation test voltage (RMS)
t = 1 min
V
IO
1)
5
kV
Total power dissipation
T
amb
25
C
P
tot
250
mW
Operating ambient temperature
range
T
amb
40 to +100
C
Storage temperature range
T
stg
55 to +125
C
Soldering temperature
2 mm from case, t
10 s
T
sd
260
C
1)
Related to standard climate 23/50 DIN 50014
K814P/ K824P/ K844P
Vishay Telefunken
Rev. A4, 11Jan99
163
Electrical Characteristics
(T
amb
= 25
C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I
F
=
50 mA
V
F
1.25
1.6
V
Reverse current
V
R
=
6 V
I
R
10
m
A
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter voltage
I
C
= 100
m
A
V
CEO
70
V
Emitter collector voltage
I
E
= 100
m
A
V
ECO
7
V
Collector dark current
V
CE
= 20 V, I
F
= 0, E = 0
I
CEO
100
nA
Coupler
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter
saturation voltage
I
F
=
10 mA, I
C
= 1 mA
V
CEsat
0.3
V
Cut-off frequency
I
F
=
10 mA, V
CE
= 5 V,
R
L
= 100
W
f
c
100
kHz
Coupling capacitance
f = 1 MHz
C
k
0.3
pF
Current Transfer Ratio (CTR)
Parameter
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
I
C
/I
F
V
CE
= 5 V, I
F
=
5 mA
CTR
0.2
3.0
K814P/ K824P/ K844P
Vishay Telefunken
Rev. A4, 11Jan99
164
Switching Characteristics
Parameter
Test Conditions
Symbol
Typ.
Unit
Delay time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
W
(see figure 1)
t
d
3.0
m
s
Rise time
S
C
L
(
g
)
t
r
3.0
m
s
Fall time
t
f
4.7
m
s
Storage time
t
s
0.3
m
s
Turn-on time
t
on
6.0
m
s
Turn-off time
t
off
5.0
m
s
Turn-on time
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k
W
(see figure 2)
t
on
9.0
m
s
Turn-off time
S
F
L
(
g
)
t
off
18.0
m
s
Channel I
Channel II
100
W
50
W
+ 5 V
Oscilloscope
R
L
> 1 M
W
C
L
< 20 pF
I
C
= 2 mA ;
adjusted through
input amplitude
I
F
I
F
R
G
= 50
W
t
p
t
p
= 50
ms
T
= 0.01
0
13343
Figure 1. Test circuit, non-saturated operation
Channel I
Channel II
1 k
W
50
W
+ 5 V
Oscilloscope
R
L
> 1 M
W
C
L
< 20 pF
I
C
I
F
R
G
= 50
W
t
p
t
p
= 50
ms
T
= 0.01
0
13344
I
F
= 10 mA
Figure 2. Test circuit, saturated operation
t
p
t
t
0
0
10%
90%
100%
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
96 11698
t
p
pulse dura-
tion
t
d
delay time
t
r
rise time
t
on
(= t
d
+ t
r
)
turn-on time
t
s
storage time
t
f
fall time
t
off
(= t
s
+ t
f
)
turn-off time
Figure 3. Switching times
K814P/ K824P/ K844P
Vishay Telefunken
Rev. A4, 11Jan99
165
Typical Characteristics
(T
amb
= 25
_
C, unless otherwise specified)
0
50
100
150
200
250
300
0
40
80
120
P
T
otal Power Dissipation ( mW
)
T
amb
Ambient Temperature (
C )
96 11700
tot
Coupled device
Phototransistor
IR-diode
Figure 4. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
Forward Voltage ( V )
96 11862
F
I Forward Current ( mA
)
Figure 5. Forward Current vs. Forward Voltage
25
0
25
50
0
0.5
1.0
1.5
2.0
CTR Relative Current
T
ransfer
Ratio
rel
T
amb
Ambient Temperature (
C )
95 11025
75
V
CE
=5V
I
F
=5mA
Figure 6. Relative Current Transfer Ratio vs.
Ambient Temperature
0
25
50
75
1
10
100
1000
10000
I Collector Dark Current,
CEO
T
amb
Ambient Temperature (
C )
100
95 11026
with open Base ( nA
)
V
CE
=20V
I
F
=0
Figure 7. Collector Dark Current vs.
Ambient Temperature
0.1
1
10
0.01
0.1
1
100
I Collector Current ( mA
)
C
I
F
Forward Current ( mA )
100
95 11027
10
V
CE
=5V
Figure 8. Collector Current vs. Forward Current
0.1
1
10
0.1
1
10
100
V
CE
Collector Emitter Voltage ( V )
100
95 10985
I Collector Current ( mA
)
C
I
F
=50mA
5mA
2mA
1mA
20mA
10mA
Figure 9. Collector Current vs. Collector Emitter Voltage
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