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MBR10H150CT, MBRF10H150CT & MBRB10H150CT-1
Vishay Semiconductors
formerly General Semiconductor
New Product
Dual High-Voltage Schottky Rectifiers
Reverse Voltage 150V
Forward Current 10A
Max. Junction Temperature 175
C
0.405 (10.28)
0.389 (9.88)
0.370 (9.40)
0.354 (9.00)
0.523 (13.28)
0.507 (12.88)
0.425 (10.80)
0.393 (10.00)
0.102 (2.60)
0.087 (2.20)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.062 (1.57)
0.054 (1.37)
0.055 (1.40)
0.039 (1.00)
0.488 (12.4)
0.472 (12.00)
1
2
K
3
PIN
0.024 (0.60)
0.018 (0.45)
0.100
(2.54) Typ.
0.200 (5.08) Typ.
0.028 (0.70)
0.035 (0.90)
0.398 (10.10)
0.382 (9.70)
CASE
PIN 2
PIN 1
PIN 3
0.531 (13.48)
0.507 (12.88)
0.024 (0.60)
0.018 (0.45)
0.138 (3.50)
0.122 (3.10)
0.141 (3.58)
0.125 (3.18)
1.29 (3.28)
1.21 (3.08)
0.100
(2.54) Typ.
0.200 (5.08) Typ.
0.058 (1.47) Typ.
0.024 (0.60)
0.039 (1.00)
0.108 (2.74)
0.092 (2.34)
0.117 (2.96)
0.101 (2.56)
1.164 (29.55)
1.108 (28.15)
0.633 (16.07)
0.601 (15.67)
0.630 (16.00)
0.614 (15.60)
Dia.
0.370 (9.39)
0.354 (8.99)
0.396 (10.05)
0.372 (9.45)
1
2
3
PIN
CASE
PIN 2
PIN 1
PIN 3
0.408 (10.36)
0.392 (9.96)
ITO-220AB (MBRF10H150CT)
TO-220AB (MBR10H150CT)
TO-262AA (MBRB10H150CT-1)
0.398 (10.10)
0.382 (8.70)
0.523 (13.28)
0.507 (12.88)
0.185 (4.70)
0.169 (4.30)
0.024 (0.60)
0.018 (0.45)
0.114 (2.90)
0.106 (2.70)
0.634 (16.10)
0.618 (15.70)
0.055 (1.40)
0.047 (1.20)
0.154 (3.90)
0.138 (3.50)
0.150 (3.80)
0.139 (3.54)
0.118
(3.00) Typ.
0.067
(1.70) Typ.
0.100
(2.54) Typ.
0.331 (8.40) Typ.
0.343 (8.70) Typ.
0.200 (5.08) Typ.
0.056 (1.42)
0.064 (1.62)
0.028 (0.70)
0.035 (0.90)
0.055 (1.40)
0.049 (1.25)
0.102 (2.60)
0.087 (2.20)
1.161 (29.48)
1.105 (28.08)
0.638 (16.20)
0.598 (15.20)
Dia.
0.370 (9.40)
0.354 (9.00)
1
2
3
PIN
CASE
PIN 2
PIN 1
PIN 3
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Dual rectifier construction, positive center tap
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
Guardring for overvoltage protection
For use in high frequency inverters,
free wheeling, and polarity protection applications
Mechanical Data
Case: JEDEC TO-220AB, ITO-220AB & TO-262AA
molded plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250C/10 seconds, 0.25" (6.35mm) from case
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08oz., 2.24g
Dimensions in inches
and (millimeters)
Document Number 88779
www.vishay.com
18-Jul-03
1
MBR10H150CT, MBRF10H150CT & MBRB10H150CT-1
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
(T
C
= 25C unless otherwise noted)
Parameter
Symbol
MBR10H150CT
Unit
Maximum repetitive peak reverse voltage
V
RRM
150
V
Working peak reverse voltage
V
RWM
150
V
Maximum DC blocking voltage
V
DC
150
V
Maximum average forward rectified current Total device
10
(see fig. 1)
Per leg
I
F(AV)
5
A
Peak forward surge current
8.3ms single half sine-wave superimposed
I
FSM
160
A
on rated load (JEDEC Method) per leg
Peak repetitive reverse current per leg at t
p
= 2
s, 1KH
Z
I
RRM
1.0
A
Peak non-repetitive reverse surge energy per leg
E
RSM
10
mJ
(8/20
s waveform)
Non-repetitive avalanche energy per leg
at 25
C, I
AS
= 1.5A, L=10mH
E
AS
11.25
mJ
Voltage rate of change (rated V
R
)
dv/dt
10,000
V/
s
Operating junction and storage temperature range
T
J
, T
STG
65 to +175
C
RMS Isolation voltage (MBRF type only) from terminals
4500
(1)
to heatsink with t = 1 second, RH
30%
V
ISOL
3500
(2)
V
1500
(3)
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Parameter
Symbol
Value
Unit
Maximum instantaneous
at I
F
= 5.0A, T
J
= 25C
0.88
forward voltage per leg
(4)
at I
F
= 5.0A, T
J
= 125C
V
F
0.72
V
at I
F
= 10A, T
J
= 25C
0.96
at I
F
= 10A, T
J
= 125C
0.80
Maximum reverse current per leg
T
J
= 25C
5.0
A
at working peak reverse voltage
(Note 4)
T
J
= 125C
I
R
1.0
mA
Thermal Characteristics
(T
C
= 25C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Typical thermal resistance per leg
R
JC
2.4
4.5
2.4
O
C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
4.9 mm (0.19")
(4) Pulse test: 300
s pulse width, 1% duty cycle
www.vishay.com
Document Number 88779
2
18-Jul-03
0.1
0.3
0.2
0.4
0.6
0.8
1.0
0.5
0.7
0.9
1.1
1.2
100
10
0.1
1
0.1
0.01
1
10
100
1,000
10,000
0.01
1
10
100
10
100
0.1
0.1
1
Fig. 3 Typical Instantaneous
Forward Characteristics Per Leg
I
R
-
-
Instantaneous
Reverse Current (
A)
Junction Capacitance (pF)
1
10
100
100
1000
10000
0.1
10
Fig. 5 Typical Junction Capacitance
Per Leg
Reverse Voltage (V)
10
20
30
50
70
100
40
60
80
90
Fig. 4 Typical Reverse
Characteristics Per Leg
Fig. 6 Typical Transient
Thermal Impedance Per Leg
t -- Pulse Duration (sec.)
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
I
F
-
-
Instantaneous Forward Current (A)
Transient Thermal Impedance (
C/W)
0
2
4
6
8
10
12
25
50
75
100
125
150
175
Fig. 1 Forward Derating Curve
(Total)
A
v
er
age F
orw
ard Current (A)
Case Temperature (
C)
0
20
40
60
80
200
180
160
140
120
100
1
10
100
Fig. 2 Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
P
eak F
orw
ard Surge Current (A)
Number of Cycles at 60 H
Z
T
J
= T
Jmax
8.3ms single half-wave
(JEDEC Method)
T
J
= 175
C
T
J
= 125
C
T
J
= 75
C
T
J
= 25
C
MBRF
MBR, MBRB
T
J
= 175
C
T
J
= 125
C
T
J
= 75
C
T
J
= 25
C
MBRF
MBR, MBRB
MBR10H150CT, MBRF10H150CT & MBRB10H150CT-1
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
Document Number 88779
www.vishay.com
18-Jul-03
3
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