S505T/S505TR/S505TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (5)
Document Number 85044
MOSMIC
for TVTuner Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
G2
G1
RF in
AGC
S
D
V
DD
C block
RFC
RF out
13650
C block
C block
RG1
V
DD
Features
D
Easy Gate 1 switch-off with PNP switching
transistors inside PLL
D
High AGC-range with less steep slope
D
Integrated gate protection diodes
D
Low noise figure
D
High gain
D
Improved cross modulation at gain reduction
D
SMD package
13 579
2
1
4
3
94 9279
S505T Marking: 505
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
95 10831
2
1
4
3
94 9278
S505TR Marking: 55R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
2
1
3
4
13 566
13 654
S505TRW Marking: W05
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
S505T/S505TR/S505TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
2 (5)
Document Number 85044
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Drain - source voltage
V
DS
8
V
Drain current
I
D
30
mA
Gate 1/Gate 2 - source peak current
I
G1/G2SM
10
mA
Gate 1/Gate 2 - source voltage
V
G1/G2SM
6
V
Total power dissipation
T
amb
60
C
P
tot
200
mW
Channel temperature
T
Ch
150
C
Storage temperature range
T
stg
55 to +150
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
R
thChA
450
K/W
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Drain - source
breakdown voltage
I
D
= 10
m
A, V
G2S
= V
G1S
= 0
V
(BR)DSS
15
V
Gate 1 - source
breakdown voltage
I
G1S
= 10 mA, V
G2S
= V
DS
= 0
V
(BR)G1SS
7
10
V
Gate 2 - source
breakdown voltage
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
V
(BR)G2SS
7
10
V
Gate 1 - source
leakage current
+V
G1S
= 5 V, V
G2S
= V
DS
= 0
+I
G1SS
20
nA
Gate 2 - source
leakage current
V
G2S
= 5 V, V
G1S
= V
DS
= 0
I
G2SS
20
nA
Drain - source
operating current
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 220 k
W
I
DSO
10
13
18
mA
Gate 1 - source
cut-off voltage
V
DS
= 5 V, V
G2S
= 4, I
D
= 20
m
A
V
G1S(OFF)
0.4
1.2
V
Gate 2 - source
cut-off voltage
V
DS
= V
RG1
= 5 V, R
G1
= 220 k
W
, I
D
= 20
m
A
V
G2S(OFF)
1.0
V
Remark on improving intermodulation behavior:
By setting R
G1
smaller than 220 k
W
, e.g., 180 k
W
, typical value of I
DSO
will raise and improved intermodulation
behavior will be performed.
S505T/S505TR/S505TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (5)
Document Number 85044
Electrical AC Characteristics
V
DS
= 5 V, V
G2S
= 4 V, I
D
= 13 mA, f = 1 MHz , T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Forward transadmittance
y
21s
28
35
mS
Gate 1 input capacitance
C
issg1
2.3
2.7
pF
Feedback capacitance
C
rss
25
fF
Output capacitance
C
oss
1.1
pF
Power gain
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
ps
28
dB
g
G
S
= 3,3 mS, G
L
= 1 mS, f = 800 MHz
G
ps
17
21
dB
AGC range
V
DS
= 5 V, V
G2S
= 1 to 4 V, f = 800 MHz
D
G
ps
45
dB
Noise figure
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
F
1
dB
g
G
S
= 3,3 mS, G
L
= 1 mS, f = 800 MHz
F
1.3
dB
Dimensions of S505T in mm
96 12240
S505T/S505TR/S505TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
4 (5)
Document Number 85044
Dimensions of S505TR in mm
96 12239
Dimensions of S505TRW in mm
96 12238
S505T/S505TR/S505TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
5 (5)
Document Number 85044
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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