S593T/S593TR/S593TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (9)
Document Number 85047
MOSMIC
for TVTuner Prestage with 5 V Supply
Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
G2
G1
RF in
AGC
S
D
V
DD
C block
RFC
RF out
94 9296
C block
C block
Features
D
Integrated gate protection diodes
D
Low noise figure
D
High gain
D
Biasing network on chip
D
Improved cross modulation at gain reduction
D
High AGC-range
D
SMD package
13 579
2
1
4
3
94 9279
S593T Marking: 593
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
95 10831
2
1
4
3
94 9278
S593TR Marking: 93R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
2
1
3
4
13 566
13 654
S593TRW Marking: W93
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
S593T/S593TR/S593TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
2 (9)
Document Number 85047
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Drain - source voltage
V
DS
8
V
Drain current
I
D
30
mA
Gate 1/Gate 2 - source peak current
I
G1/G2SM
10
mA
Gate 1/Gate 2 - source voltage
V
G1/G2SM
6
V
Total power dissipation
T
amb
78
C
P
tot
200
mW
Channel temperature
T
Ch
150
C
Storage temperature range
T
stg
55 to +150
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
R
thChA
450
K/W
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Gate 1 - source
breakdown voltage
I
G1S
= 10 mA, V
G2S
= V
DS
= 0
V
(BR)G1SS
7
10
V
Gate 2 - source
breakdown voltage
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
V
(BR)G2SS
7
10
V
Gate 1 - source
+V
G1S
= 5 V, V
G2S
= V
DS
= 0
+I
G1SS
50
m
A
leakage current
V
G1S
= 5 V, V
G2S
= V
DS
= 0
I
G1SS
100
m
A
Gate 2 - source
leakage current
V
G2S
= 5 V, V
G1S
= V
DS
= 0
I
G2SS
20
nA
Drain current
V
DS
= 5 V, V
G1S
= 0, V
G2S
= 4 V
I
DSS
50
500
m
A
Self-biased
operating current
V
DS
= 5 V, V
G1S
= nc, V
G2S
= 4 V
I
DSP
9
13
18
mA
Gate 2 - source
cut-off voltage
V
DS
= 5 V, V
G1S
= nc, I
D
= 20
m
A
V
G2S(OFF)
1.0
V
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V
G1S
< 0.7 V is feasible.
Using open collector switching transistor (inside of PLL). Insert 10 k
W
collector resistor.
S593T/S593TR/S593TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (9)
Document Number 85047
Electrical AC Characteristics
V
DS
= 5 V, V
G2S
= 4 V, f = 1 MHz , T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Forward transadmittance
y
21s
35
40
50
mS
Gate 1 input capacitance
C
issg1
3.2
pF
Feedback capacitance
C
rss
30
fF
Output capacitance
C
oss
1.5
pF
Power gain
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
ps
28
dB
g
G
S
= 3,3 mS, G
L
= 1 mS, f = 800 MHz
G
ps
20
23
dB
AGC range
V
G2S
= 1 to 4 V, f = 800 MHz
D
G
ps
40
dB
Noise figure
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
F
1
dB
g
G
S
= 3,3 mS, G
L
= 1 mS, f = 800 MHz
F
1.3
dB
Common Source SParameters
V
DS
= 5 V , V
G2S
= 4 V , Z
0
= 50
W,
T
amb
= 25
_
C, unless otherwise specified
S11
S21
S12
S22
f/MHz
LOG
MAG
ANG
LOG
MAG
ANG
LOG
MAG
ANG
LOG
MAG
ANG
dB
deg
dB
deg
dB
deg
dB
deg
50
0.02
6.1
11.83
172.1
61.74
89.0
0.07
3.0
100
0.06
12.3
11.72
163.6
55.68
87.3
0.10
6.0
150
0.17
18.2
11.53
154.8
52.35
86.2
0.15
8.8
200
0.29
23.9
11.35
146.8
50.26
86.0
0.19
11.8
250
0.41
29.7
11.10
138.4
48.69
86.2
0.26
14.7
300
0.59
35.1
10.83
130.7
47.51
87.6
0.33
17.3
350
0.75
40.5
10.50
123.3
46.72
89.9
0.38
20.0
400
0.92
45.7
10.18
115.6
45.95
93.1
0.47
22.6
450
1.10
50.6
9.82
108.8
45.27
97.4
0.53
27.6
500
1.30
55.5
9.51
101.8
44.56
102.7
0.60
30.2
550
1.46
60.2
9.19
95.1
43.72
109.4
0.65
33.1
600
1.63
64.9
8.78
88.2
42.33
114.3
0.72
35.1
650
1.79
69.1
8.47
82.4
41.42
116.7
0.78
37.6
700
1.94
73.5
8.14
76.1
40.50
121.0
0.82
40.3
750
2.12
77.6
7.89
70.0
39.46
125.4
0.84
42.8
800
2.23
81.7
7.56
63.7
38.31
128.9
0.87
45.5
850
2.37
85.9
7.29
57.3
37.06
131.4
0.91
48.2
900
2.45
89.8
6.93
50.6
35.80
132.9
0.97
51.0
950
2.56
93.9
6.60
44.0
34.52
132.4
1.03
54.1
1000
2.70
97.8
6.26
38.4
33.56
131.2
1.04
56.8
1050
2.81
101.6
5.95
32.4
32.82
131.0
1.07
59.3
1100
2.92
105.2
5.61
26.0
32.10
131.9
1.16
59.3
1150
3.02
108.7
5.36
18.9
31.19
132.0
1.18
62.4
1200
3.05
112.3
5.05
12.3
30.25
132.5
1.19
66.0
1250
3.09
115.9
4.80
4.8
29.32
131.9
1.21
69.8
1300
3.16
119.4
4.33
2.6
28.56
130.9
1.31
72.9
S593T/S593TR/S593TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
4 (9)
Document Number 85047
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
0
25
50
75
100
0
50
100
150
200
250
P
T
otal Power Dissipation ( mW
)
tot
T
amb
Ambient Temperature (
C )
150
95 10759
125
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
1
2
3
0
4
8
12
16
20
I Drain Current ( mA
)
D
V
DS
Drain Source Voltage ( V )
5
95 11162
4
V
G2S
=4V
2V
1V
3V
Figure 2. Drain Current vs. Drain Source Voltage
0
1
2
3
4
0
4
8
12
16
20
I Drain Current ( mA
)
D
V
G2S
Gate 2 Source Voltage ( V )
95 11163
V
DS
=5V
Figure 3. Drain Current vs. Gate 2 Source Voltage
0
10
20
30
40
95 11164
0
1
2
3
4
V
G2S
Gate 2 Source Voltage ( V )
V
DS
=5V
f=200MHz
y Forward
T
ransadmittance ( mS )
21s
Figure 4. Forward Transadmittance vs.
Gate 2 Source Voltage
C Gate 1 Input Capacitance ( pF )
issg1
95 11165
0
1
2
3
4
0
1
2
3
4
V
G2S
Gate 2 Source Voltage ( V )
6
5
V
DS
=5V
f=200MHz
Figure 5. Gate 1 Input Capacitance vs.
Gate 2 Source Voltage
3
4
5
6
0
0.5
1
1.5
2
C Output Capacitance ( pF )
oss
V
DS
Drain Source Voltage ( V )
7
95 11166
V
G2S
=4V
f=200MHz
Figure 6. Output Capacitance vs. Drain Source Voltage
S593T/S593TR/S593TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
5 (9)
Document Number 85047
95 11167
60
40
20
0
20
S
T
ransducer
Gain
(
dB
)
2
0
1
2
3
4
V
G2S
Gate 2 Source Voltage ( V )
21
V
DS
=5V
f=800MHz
Figure 7. Transducer Gain vs. Gate 2 Source Voltage
CM Cross Modulation ( dB )
95 11168
0
20
40
60
80
2
3
4
5
6
V
G2S
Gate 2 Source Voltage ( V )
V
DS
=5V
f=800MHz
Figure 8. Cross Modulation vs. Gate 2 Source Voltage
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