S595T/S595TR/S595TRW
Vishay Telefunken
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Rev. 4, 20-Jan-99
1 (9)
Document Number 85049
MOSMIC
for TVTuner Prestage with 5 V Supply
Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
G2
G1
RF in
AGC
S
D
V
DD
C block
RFC
RF out
94 9296
C block
C block
Features
D
Integrated gate protection diodes
D
Low noise figure
D
High gain
D
Biasing network on chip
D
Improved cross modulation at gain reduction
D
High AGC-range
D
SMD package
13 579
2
1
4
3
94 9279
S595T Marking: 595
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
95 10831
2
1
4
3
94 9278
S595TR Marking: 59R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
2
1
3
4
13 566
13 654
S595TRW Marking: W59
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
S595T/S595TR/S595TRW
Vishay Telefunken
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Rev. 4, 20-Jan-99
2 (9)
Document Number 85049
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Drain - source voltage
V
DS
8
V
Drain current
I
D
30
mA
Gate 1/Gate 2 - source peak current
I
G1/G2SM
10
mA
Gate 1/Gate 2 - source voltage
V
G1/G2SM
6
V
Total power dissipation
T
amb
60
C
P
tot
200
mW
Channel temperature
T
Ch
150
C
Storage temperature range
T
stg
55 to +150
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
R
thChA
450
K/W
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Gate 1 - source
breakdown voltage
I
G1S
= 10 mA, V
G2S
= V
DS
= 0
V
(BR)G1SS
7
10
V
Gate 2 - source
breakdown voltage
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
V
(BR)G2SS
7
10
V
Gate 1 - source
+V
G1S
= 5 V, V
G2S
= V
DS
= 0
+I
G1SS
50
m
A
leakage current
V
G1S
= 5 V, V
G2S
= V
DS
= 0
I
G1SS
100
m
A
Gate 2 - source
leakage current
V
G2S
= 5 V, V
G1S
= V
DS
= 0
I
G2SS
20
nA
Drain current
V
DS
= 5 V, V
G1S
= 0, V
G2S
= 4 V
I
DSS
50
500
m
A
Self-biased
operating current
V
DS
= 5 V, V
G1S
= nc, V
G2S
= 4 V
I
DSP
9
13
18
mA
Gate 2 - source
cut-off voltage
V
DS
= 5 V, V
G1S
= nc, I
D
= 20
m
A
V
G2S(OFF)
1.0
V
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V
G1S
< 0.7 V is feasible.
Using open collector switching transistor (inside of PLL), insert 10 k
W
collector resistor.
S595T/S595TR/S595TRW
Vishay Telefunken
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Rev. 4, 20-Jan-99
3 (9)
Document Number 85049
Electrical AC Characteristics
V
DS
= 5 V, V
G2S
= 4 V, f = 1 MHz , T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Forward transadmittance
y
21s
28
30
35
mS
Gate 1 input capacitance
C
issg1
2.3
2.7
pF
Feedback capacitance
C
rss
25
fF
Output capacitance
C
oss
1.1
pF
Power gain
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
ps
28
dB
g
G
S
= 3,3 mS, G
L
= 1 mS, f = 800 MHz
G
ps
17
21
dB
AGC range
V
DS
= 5 V, V
G2S
= 1 to 4 V, f = 800 MHz
D
G
ps
45
dB
Noise figure
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
F
1
dB
g
G
S
= 3,3 mS, G
L
= 1 mS, f = 800 MHz
F
1.3
dB
Common Source SParameters
V
DS
= 5 V , V
G2S
= 4 V , Z
0
= 50
W,
T
amb
= 25
_
C, unless otherwise specified
S11
S21
S12
S22
f/MHz
LOG
MAG
ANG
LOG
MAG
ANG
LOG
MAG
ANG
LOG
MAG
ANG
dB
deg
dB
deg
dB
deg
dB
deg
50
0.01
4.6
9.61
174.3
63.13
88.0
0.08
2.1
100
0.03
9.2
9.56
167.9
56.88
85.3
0.10
4.3
150
0.11
13.8
9.44
161.3
53.46
82.8
0.14
6.4
200
0.19
18.1
9.30
155.1
51.38
80.7
0.16
8.6
250
0.28
22.6
9.15
148.4
49.76
78.3
0.22
11.0
300
0.40
26.8
9.00
142.7
48.70
77.3
0.26
12.9
350
0.51
31.1
8.79
136.8
47.92
76.4
0.30
15.1
400
0.64
35.2
8.62
130.7
47.45
76.2
0.38
17.1
450
0.78
39.3
8.35
125.3
47.23
76.7
0.43
18.8
500
0.93
43.2
8.17
119.7
47.10
78.4
0.49
20.6
550
1.07
47.1
7.94
114.2
47.22
82.3
0.55
22.6
600
1.22
50.8
7.71
108.7
46.92
88.6
0.60
24.6
650
1.36
54.4
7.50
104.1
46.68
92.6
0.66
26.1
700
1.49
58.2
7.26
99.1
46.47
98.8
0.70
27.9
750
1.65
61.5
7.08
94.1
46.45
107.2
0.73
29.8
800
1.79
65.2
6.86
89.2
45.89
116.7
0.78
31.7
850
1.94
68.6
6.68
84.5
44.77
125.9
0.80
33.4
900
2.04
72.0
6.44
79.3
43.51
133.0
0.85
35.4
950
2.17
75.3
6.27
74.4
41.91
137.1
0.87
37.2
1000
2.29
78.7
6.09
70.4
40.66
138.5
0.89
39.1
1050
2.42
82.2
5.93
65.8
39.81
140.6
0.90
41.1
1100
2.58
85.2
5.67
61.1
38.89
143.6
0.92
42.6
1150
2.70
88.4
5.55
56.1
37.91
145.8
0.93
44.6
1200
2.78
91.6
5.41
51.8
36.76
148.3
0.94
46.7
1250
2.89
94.8
5.38
47.1
35.65
149.7
0.93
49.1
1300
3.00
97.7
5.17
42.0
34.63
150.1
0.92
51.0
S595T/S595TR/S595TRW
Vishay Telefunken
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FaxBack +1-408-970-5600
Rev. 4, 20-Jan-99
4 (9)
Document Number 85049
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
0
25
50
75
100
0
50
100
150
200
250
P
T
otal Power Dissipation ( mW
)
tot
T
amb
Ambient Temperature (
C )
150
95 10759
125
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
1
2
3
0
4
8
12
16
20
I Drain Current ( mA
)
D
V
DS
Drain Source Voltage ( V )
5
95 11157
4
V
G2S
=4V
2V
1V
3V
1.5V
Figure 2. Drain Current vs. Drain Source Voltage
0
1
2
3
4
0
4
8
12
16
20
I Drain Current ( mA
)
D
V
G2S
Gate 2 Source Voltage ( V )
95 11158
V
DS
=5V
Figure 3. Drain Current vs. Gate 2 Source Voltage
0
10
20
30
40
95 11159
0
1
2
3
4
V
G2S
Gate 2 Source Voltage ( V )
V
DS
=5V
f=200MHz
y Forward
T
ransadmittance ( mS )
21s
Figure 4. Forward Transadmittance vs.
Gate 2 Source Voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
V
G2S
Gate 2 Source Voltage ( V )
13634
C Gate 1 Input Capacitance ( pF )
issg1
V
DS
=5V
f=200MHz
Figure 5. Gate 1 Input Capacitance vs.
Gate 2 Source Voltage
0
0.5
1.0
1.5
2.0
3
4
5
6
7
V
DS
Drain Source Voltage ( V )
13635
C Output Capacitance ( pF )
oss
V
DS
=4V
f=200MHz
Figure 6. Output Capacitance vs. Drain Source Voltage
S595T/S595TR/S595TRW
Vishay Telefunken
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FaxBack +1-408-970-5600
Rev. 4, 20-Jan-99
5 (9)
Document Number 85049
60
50
40
30
20
10
0
10
20
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
G2S
Gate 2 Source Voltage ( V )
13636
S
T
ransducer
Gain
(
dB
)
2
21
V
DS
=5V
f=800MHz
Figure 7. Transducer Gain vs. Gate 2 Source Voltage
0
10
20
30
40
50
60
70
80
2
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
G2S
Gate 2 Source Voltage ( V )
13637
CM Cross Modulation ( dB )
V
DS
=5V
f=800MHz
P
in
=20dBm
Figure 8. Cross Modulation vs. Gate 2 Source Voltage
S595T/S595TR/S595TRW
Vishay Telefunken
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FaxBack +1-408-970-5600
Rev. 4, 20-Jan-99
6 (9)
Document Number 85049
V
DS
= 5 V, V
G2S
= 4 V , Z
0
= 50
W
S
11
12 944
j0.2
j0.5
j
j2
j5
0
j0.2
j0.5
j
j2
j5
1
0.2
0.5
1
2
5
50
1300MHz
300
550
800
1050
Figure 9. Input reflection coefficient
S
21
12 946
0
90
180
90
1.0
2.0
150
120
60
30
60
30
50
1300MHz
300
550
800
1050
Figure 10. Forward transmission coefficient
S
12
12 945
0
90
180
90
0.008
0.016
150
120
60
30
120
60
30
50
1300MHz
300
550
800
1050
Figure 11. Reverse transmission coefficient
S
22
12 947
j0.2
j0.5
j
j2
j5
0
j0.2
j0.5
j
j2
j5
1
0.2
0.5
1
2
5
50
1300MHz
300
550
800
1050
Figure 12. Output reflection coefficient
S595T/S595TR/S595TRW
Vishay Telefunken
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FaxBack +1-408-970-5600
Rev. 4, 20-Jan-99
7 (9)
Document Number 85049
Dimensions of S595T in mm
96 12240
Dimensions of S595TR in mm
96 12239
S595T/S595TR/S595TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 4, 20-Jan-99
8 (9)
Document Number 85049
Dimensions of S595TRW in mm
96 12238
S595T/S595TR/S595TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 4, 20-Jan-99
9 (9)
Document Number 85049
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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