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Электронный компонент: SB160

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SB120 thru SB160
Vishay Semiconductors
formerly General Semiconductor
Document Number 88715
www.vishay.com
04-Jun-03
1
Schottky Barrier Rectifier
Reverse Voltage 20 to 60V
Forward Current 1.0A
Maximum Ratings and Thermal Characteristics
(T
A
= 25C unless otherwise noted)
Parameter
Symbol
SB120
SB130
SB140
SB150
SB160
Unit
Maximum repetitive peak reverse voltage
V
RRM
20
30
40
50
60
V
Maximum RMS voltage
V
RMS
14
21
28
35
42
V
Maximum DC blocking voltage
V
DC
20
30
40
50
60
V
Maximum average forward rectified current
I
F(AV)
1.0
A
at 0.375" (9.5mm) lead length
(See Fig. 1)
Peak forward surge current 8.3ms single half sine-wave
I
FSM
50
A
superimposed on rated load (JEDEC Method)
Typical thermal resistance
(1)
R
JA
50
R
JL
15
C/W
Operating junction temperature range
T
J
65 to +125
65 to +150
C
Storage temperature range
T
STG
65 to +150
C
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Maximum instantaneous
V
F
0.48
0.65
V
forward voltage at 1.0A
(2)
Maximum instantaneous reverse current
T
A
= 25C
I
R
0.5
mA
at rated DC blocking voltage
(2)
T
A
= 100C
10
5.0
Notes: (1) Thermal resistance junction to lead P.C.B. mounted 0.375" (9.5mm) lead length
(2) Pulse test: 300
s pulse width, 1% duty cycle
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low power loss, high efficiency
For use in low voltage high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
Mechanical Data
Case: JEDEC DO-204AL molded plastic body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250C/10 seconds 0.375" (9.5mm) lead length,
5lbs. (2.3kg) tension
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012 ounce, 0.34 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
DIA.
Dimensions in inches
and (millimeters)
DO-204AL (DO-41)
Dimensions in inches and (millimeters)
SB120 thru SB160
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88715
2
04-Jun-03
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
Instantaneous F
orw
ard Current (A)
50
10
Instantaneous Re
v
erse Current (mA)
1.0
0.1
0.01
Fig. 1 - Forward Current Derating Curve
0
0.25
0.5
0.75
0
50
75
25
100
125
150
175
1.0
A
v
er
age F
orw
ard Current (A)
P
eak F
orw
ard Surge Current (A)
Number of Cycles at 60 H
Z
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
0
10
30
20
50
40
1
10
100
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Lead Temperature (
C)
Fig. 3 - Typical Instantaneous
Forward Characteristics
1.0
10
100
0.01
0.001
0.1
T
J
= 125
C
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
T
r
ansient
Ther
mal Impedance (
C/W)
0.01
1
10
100
10
100
0.1
0.1
1
Pulse Duration (sec.)
T
J
= 125
C
Fig. 5 - Typical Junction Capacitance
J
unction Capacitance (pF)
1
10
100
100
400
10
0.1
Reverse Voltage (V)
T
J
= 25
C
f = 1.0 MH
Z
V
sig
= 50mVp-p
Instantaneous Forward Voltage (V)
0
0.4
0.2
1.2
0.8
0.6
1.4
1.6
1.0
Pulse Width = 300
s
1% Duty Cycle
0
20
100
40
60
80
Fig. 6 - Typical Transient
Thermal Impedance
Percent of Rated Peak Reverse Voltage (%)
SB120 SB140
SB150
& SB160
T
J
= 25
C
T
J
= 150
C
SB120 SB140
SB150 & SB160
SB120 SB140
SB150 & SB160
T
J
= 75
C
T
J
= 25
C
SB120 SB140
SB150 & SB160
Fig. 4 - Typical Reverse Characteristics