SD103ASD103C
Vishay
Semiconductors
1 (4)
Rev. 1, 22-Nov-00
www.vishay.com
Document Number 85633
Small Signal Schottky Barrier Diodes
Features
D
Integrated protection ring
against static discharge
D
Low capacitance
D
Low leakage current
D
Low forward voltage drop
Applications
HFDetector
Protection circuit
Small battery charger
ACDC / DCDC converters
94 9367
Order Instruction
Type
Type Differentiation
Ordering Code
Remarks
SD103A
V =40 V V @I 20mA max 0 37 V
SD103ATAP
Ammopack
SD103A
V
R
=40 V, V
F
@I
F
20mA max. 0.37 V
SD103ATR
Tape and Reel
SD103B
V
R
=30 V V
F
@I
F
20mA max 0 37 V
SD103BTAP
Ammopack
SD103B
V
R
=30 V, V
F
@I
F
20mA max. 0.37 V
SD103BTR
Tape and Reel
SD103C
V =20 V V @I 20mA max 0 37 V
SD103CTAP
Ammopack
SD103C
V
R
=20 V, V
F
@I
F
20mA max. 0.37 V
SD103CTR
Tape and Reel
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
SD103A
V
R
40
V
Reverse voltage
SD103B
V
R
30
V
g
SD103C
V
R
20
V
Peak forward surge current
t
p
=300
m
s, square pulse
I
FSM
15
A
Power dissipation
l=4 mm, T
L
=constant
P
tot
400
mW
Junction temperature
T
j
125
C
Storage temperature range
T
stg
65...+150
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=4 mm, T
L
=constant
R
thJA
250
K/W
SD103ASD103C
Vishay
Semiconductors
2 (4)
Rev. 1, 22-Nov-00
www.vishay.com
Document Number 85633
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol Min
Typ
Max
Unit
Reverse Breakdown
SD103A
V
(BR)R
40
V
Reverse Breakdown
Voltage
I
R
=10
m
A
SD103B
V
(BR)R
30
V
Voltage
R
m
SD103C
V
(BR)R
20
V
V
R
= 30 V
SD103A
I
R
5
m
A
Leakage current
V
R
= 20 V
SD103B
I
R
5
m
A
g
V
R
= 10 V
SD103C
I
R
5
m
A
Forward voltage drop
I
F
=20mA
V
F
0.37
V
Forward voltage drop
I
F
=200mA
V
F
0.6
V
Junction capacitance
V
R
= 0 V, f= 1MHz
C
D
50
pF
Reverse recovery time I
F
=I
R
=50 to 200mA, recover to 0.1 I
R
t
rr
10
ns
Characteristics (T
j
= 25
_
C unless otherwise specified)
I Forward Current ( mA)
0.001
0.010
0.100
1.000
10.000
100.000
1000.000
0 100 200 300 400 500 600 700 800 900 1000
V
F
Forward Voltage ( mV )
16765
F
1000
100
10
1
0.1
0.01
Figure 1. Forward Current vs. Forward Voltage
I Forward Current (
A)
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
V
F
Forward Voltage ( V )
16766
F
Figure 2. Forward Current vs. Forward Voltage
1
10
100
1000
10000
0
20
40
60
80
100 120 140 160
T
j
Junction Temperature (
C )
16767
m
I Reverse Current (
A
)
R
Figure 3. Reverse Current vs. Junction Temperature
0
5
10
15
20
25
30
0
5
10
15
20
25
30
V
R
Reverse Voltage ( V )
16768
C Diode Capacitance ( pF )
D
f=1MHz
Figure 4. Diode Capacitance vs. Reverse Voltage
SD103ASD103C
Vishay
Semiconductors
4 (4)
Rev. 1, 22-Nov-00
www.vishay.com
Document Number 85633
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-
Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-
Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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