VISHAY
SFH614A
Document Number 83670
Rev. 1.3, 19-Apr-04
Vishay Semiconductors
www.vishay.com
1
i179060
1
2
4
3
E
C
A
C
Optocoupler, Phototransistor Output, 300 V BV
CEO
Features
High Isolation Test Voltage, 5300 V
RMS
High Collector-Emitter Voltage, V
CEO
= 300 V
Standard Plastic DIP-4 Package
Agency Approvals
UL File #E52744 System Code H or J
CSA 93751
Description
The SFH614A features a high collector-emitter volt-
age and high isolation voltage. These couplers have
a GaAs infrared emitting diode emitter, which is opti-
cally coupled to a silicon planar phototransistor detec-
tor, and is incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
Order Information
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Part
Remarks
SFH614A
CTR > 50 %, DIP-4
SFH614A-X009
CTR > 50 %, SMD-4 (option 9)
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V
R
6.0
V
DC Forward current
I
F
60
mA
Surge forward current
t
10 s
I
FSM
2.5
A
Derate linearly from 25 C
1.33
mW/C
Total power dissipation
P
diss
100
mW
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
300
V
Emitter-collector voltage
V
ECO
7.0
V
Collector current
I
C
50
mA
t
1.0 ms
I
C
100
mA
Derate linearly from 25 C
2.00
mW/C
Total power dissipation
P
diss
150
mW
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2
Document Number 83670
Rev. 1.3, 19-Apr-04
VISHAY
SFH614A
Vishay Semiconductors
Coupler
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Parameter
Test condition
Symbol
Value
Unit
Derate linearly from 25 C
3.33
mW/C
Total power dissipation
P
tot
250
mW
Isolation test voltage between
input and output, climate acc. to
IEC 60068-1 : 1988 (T = 1.0 s)
V
ISO
5300
V
RMS
Creepage distance
7.0
mm
Clearance
7.0
mm
Insulation thickness between
emitter and detector
0.4
mm
Comparative tracking index acc.
to DIN IEC 112/VDE 0303, part
1 : 06-84
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 C
R
IO
10
12
V
IO
= 500 V, T
amb
= 100 C
R
IO
10
11
Storage temperature range
T
stg
- 55 to +150
C
Ambient temperature range
T
amb
- 55 to +100
C
Junction temperature
T
j
100
C
Soldering temperature
max. 10 s, dip soldering:
distance to seating plane
1.5 mm
T
sld
260
C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 10 mA
V
F
1.15
1.5
V
Reverse current
V
R
= 6.0 V
I
R
0.02
10
A
Capacitance
V
R
= 0 V, f = 1.0 MHz
C
O
14
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown
voltage
I
CE
= 100
A
BV
CEO
300
V
Emitter-collector breakdown
voltage
I
EC
= 10
A
BV
ECO
7.0
V
Collector-emitter dark current
V
CE
= 10 V
I
CEO
15
1.0
A
Collector-emitter capacitance
V
CE
= 10 V, f = 1.0 MHz
C
CE
8.0
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter saturation
voltage
I
F
= 20 mA, I
C
= 1.0 mA
V
CEsat
0.3
V
Coupling capacitance
V
I-O
= 0 V, f = 1.0 MHz
C
C
0.5
V
VISHAY
SFH614A
Document Number 83670
Rev. 1.3, 19-Apr-04
Vishay Semiconductors
www.vishay.com
3
Current Transfer Ratio
Switching Characteristics
Typical Characteristics
(T
amb
= 25
C unless otherwise specified)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Current Transfer Ratio
I
F
= 10 mA, V
CE
= 10 V
CTR
50
%
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Turn on time
V
CE
= 2.0 V, I
C
= 2.0 mA,
R
L
= 100
t
on
6.0
s
Turn off time
V
CE
= 2.0 V, I
C
= 2.0 mA,
R
L
= 100
t
off
6
s
Rise time
V
CE
= 2.0 V, I
C
= 2.0 mA,
R
L
= 100
t
r
3.0
10
s
Fall time
V
CE
= 2.0 V, I
C
= 2.0 mA,
R
L
= 100
t
f
5.0
12
s
Fig. 1 Forward Current vs. Forward Voltage
Fig. 2 Collector-Emitter Dark Current vs. Collector-Emitter
Voltage
isfh614a_01
100.0
10.0
1.0
0.1
.01
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
Forward
Current,
I F
(mA)
Forward Voltage, VF (V)
isfh614a_02
10000
1000
100
10
1
0
0
50
100
150
200
250
300
350
Collector-Emitter Voltage, VCE (mV)
100C
25C
0C
Collector
Current,
I C
(mA)
Fig. 3 Collector Current vs. Collector Emitter Voltage
Fig. 4 Collector Current vs. Collector Emitter Voltage
isfh614a_03
0
5
10
15
20
25
Collector-Emitter Voltage, VCE(mV)
Collector
Current,
I C
(mA)
0
100
200
300
400
500
100C
25C
40C
IF = 20 mA
isfh614a_04
0
100
200
300
400
500
7
6
5
4
3
2
1
0
Collector-Emitter Voltage, VCE(mV)
40C
25C
100C
Collector
Current,
I C
(mA)
IF = 10 mA
www.vishay.com
4
Document Number 83670
Rev. 1.3, 19-Apr-04
VISHAY
SFH614A
Vishay Semiconductors
Package Dimensions in Inches (mm)
Fig. 5 Switching Waveform
isfh614a_06
10%
90%
Input Pulse
Output Pulse
tr
ton
tf
toff
Fig. 6 Switching Schematic
isfh614a_07
VO=VCE
RL
VCC
IF
f = 5.0 kHz
DF = 50%
i178027
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4
typ.
.100 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
10
39
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
.050 (1.27)
ISO Method A
VISHAY
SFH614A
Document Number 83670
Rev. 1.3, 19-Apr-04
Vishay Semiconductors
www.vishay.com
5
min.
.315 (8.00)
.020 (.51)
.040 (1.02)
.300 (7.62)
ref.
.375 (9.53)
.395 (10.03)
.012 (.30) typ.
.0040 (.102)
.0098 (.249)
15 max.
18449
Option 9
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