VISHAY
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Document Number 83672
Rev. 1.4, 19-Apr-04
Vishay Semiconductors
www.vishay.com
1
i179060
1
2
4
3
E
C
A
C
Optocoupler, High Reliability, 5300 V
RMS
Features
Low CTR Degradation
Good CTR Linearity Depending on Forward Cur-
rent
Isolation Test Voltage, 5300 V
RMS
High Collector-emitter Voltage, V
CEO
= 70 V
Low Saturation Voltage
Fast Switching Times
Temperature Stable
Low Coupling Capacitance
End-Stackable, .100 " (2.54 mm) Spacing
High Common-mode Interference Immunity
(Unconnected Base)
Agency Approvals
UL - File No. E52744 System Code H or J
DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Description
The SFH615XXX features a large assortment of cur-
rent transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infra-
red emitting diode emitter, which is optically coupled
to a silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8 mm are
achieved with option 6. This version complies with
60950 (DIN VDE 0805) for reinforced insulation up to
operation voltage of 400 V
RMS
or DC.
Order Information
For additional information on the available options refer to
Option Information.
Part
Remarks
SFH615AA
CTR 50 - 600 %, DIP-4
SFH615AB
CTR 80 - 260 %, DIP-4
SFH615ABL
CTR 200 - 600 %, DIP-4
SFH615ABM
CTR 200 - 400 %, DIP-4
SFH615AGB
CTR 100 - 600 %, DIP-4
SFH615AGR
CTR 100 - 300 %, DIP-4
SFH615AY
CTR 50 - 150 %, DIP-4
SFH615AA-X006
CTR 50 - 600 %, DIP-4 400 mil (option 6)
SFH615AA-X007
CTR 50 - 600 %, SMD-4 (option 7)
SFH615ABM-X006
CTR 200 - 400 %, DIP-4 400 mil (option 6)
SFH615ABM-X007
CTR 200 - 400 %, SMD-4 (option 7)
SFH615AGB-X006
CTR 100 - 600 %, DIP-4 400 mil (option 6)
SFH615AGB-X009
CTR 100 - 600 %, SMD-4 (option 9)
SFH615AGR-X006
CTR 100 - 300 %, DIP-4 400 mil (option 6)
SFH615AGR-X007
CTR 100 - 300 %, SMD-4 (option 7)
SFH615AY-X006
CTR 50 - 150 %, DIP-4 400 mil (option 6)
SFH615AY-X008
CTR 50 - 150 %, SMD-4 (option 8)
SFH615AY-X009
CTR 50 - 150 %, SMD-4 (option 9)
www.vishay.com
2
Document Number 83672
Rev. 1.4, 19-Apr-04
VISHAY
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V
R
6.0
V
DC Forward current
I
F
60
mA
Surge forward current
t
p
1.0 ms
I
FSM
2.5
A
Power dissipation
P
diss
100
mW
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter voltage
V
EC
70
V
Emitter-collector voltage
V
CE
7.0
V
Collector current
I
C
50
mA
t
p
1.0 ms
I
C
100
mA
Total power dissipation
P
diss
150
mW
Parameter
Test condition
Symbol
Value
Unit
Isolation test voltage between
emitter and detector, refer to
climate DIN 40046 part 2,
Nov.74
V
ISO
5300
V
RMS
Creepage
7.0
mm
Clearance
7.0
mm
Insulation thickness between
emitter and detector
comparative tracking index per
DIN IEC 112/VDEO 303, part 1
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 C
R
IO
10
12
V
IO
= 500 V, T
amb
= 100 C
R
IO
10
11
Storage temperature range
T
stg
- 55 to + 150
C
Ambient temperature range
T
amb
- 55 to + 100
C
Junction temperature
T
j
100
C
Soldering temperature
max. 10 s. dip soldering
distance to seating plane
1.5 mm
T
sld
260
C
VISHAY
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Document Number 83672
Rev. 1.4, 19-Apr-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Current Transfer Ratio
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 60 mA
V
F
1.25
1.65
V
Reverse current
V
R
= 6.0 V
I
R
0.01
10
A
Capacitance
V
R
= 0 V, f = 1.0 MHz
C
O
13
pF
Thermal resistance
R
thja
750
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter capacitance
V
CE
= 5 V, f = 1.0 MHz
C
CE
5.2
pF
Thermal resistance
R
thja
500
K/W
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Collector-emitter saturation
voltage
I
F
= 10 mA, I
C
= 2.5 mA
V
CEsat
0.25
0.4
V
Coupling capacitance
C
C
0.4
pF
Collector-emitter leakage
current
V
CEO
= 10 V
SFH615AA
I
CEO
10
100
nA
SFH615AGB
I
CEO
10
100
nA
SFH615AGR
I
CEO
10
100
nA
SFH615ABM
I
CEO
10
100
nA
SFH615ABL
I
CEO
10
100
nA
SFH615AY
I
CEO
10
100
nA
SFH615AB
I
CEO
10
100
nA
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
I
C
/I
F
I
F
= 5.0 mA, V
CE
= 5.0 V
SFH615AA
CTR
50
600
%
SFH615AGB
CTR
100
600
%
SFH615AGR
CTR
100
300
%
SFH615ABM
CTR
200
400
%
SFH615ABL
CTR
200
600
%
SFH615AY
CTR
50
150
%
SFH615AB
CTR
80
260
%
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4
Document Number 83672
Rev. 1.4, 19-Apr-04
VISHAY
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Vishay Semiconductors
Switching Characteristics
Typical Characteristics
(T
amb
= 25
C unless otherwise specified)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Turn-on time
I
F
= 5.0 mA
t
on
2.0
s
Turn-off time
I
F
= 5.0 mA
t
off
25
s
Fig. 1 Switching Operation (with Saturation)
Fig. 2 Current Transfer Ratio (typical) vs. Temperature
isfh615aa_01
1
V
CC
= 5 V
47
I
F
isfh615aa_02
IF = 10 mA, VCC = 5.0 V
Fig. 3 Transistor Capacitance (typ.) vs. Collector-Emitter Voltage
Fig. 4 Permissible Diode Forward Current vs. Ambient
Temperature
isfh615aa_03
f = 1.0 MHz
isfh615aa_04
VISHAY
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Document Number 83672
Rev. 1.4, 19-Apr-04
Vishay Semiconductors
www.vishay.com
5
Fig. 5 Output Characteristics (typ.) Collector Current vs.
Collector-Emitter Voltage
Fig. 6 Permissible Pulse Handling Capability Forward Current vs.
Pulse Width
Fig. 7 Diode Forward Voltage (typ.) vs. Forward Current
isfh615aa_05
isfh615aa_06
Pulse cycle
D = parameter,
isfh615aa_07
Fig. 8 Permissible Power Dissipation vs. Temperature
isfh615aa_08
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