VISHAY
SFH618A / SFH6186
Document Number 83673
Rev. 1.5, 20-Apr-04
Vishay Semiconductors
www.vishay.com
1
1
1
i179061
E
C
A
C
1
2
4
3
Optocoupler, Phototransistor Output, Low Input Current
Features
Good CTR Linearity Depending on
Forward Current
Low CTR Degradation
High Collector-emitter Voltage, V
CEO
= 55 V
Isolation Test Voltage, 5300 V
RMS
Low Coupling Capacitance
End-Stackable, 0.100 " (2.54 mm) Spacing
High Common-mode Interference Immunity
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
UL1577, File No. E52744 System Code H or J,
Double Protection
CSA 93751
DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
Telecom
Industrial Controls
Battery Powered Equipment
Office Machines
Description
The SFH618A (DIP) and SFH6186 (SMD) feature a
high current transfer ratio, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically cou-
pled to silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8.0 mm
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
to an operation voltage of 400 V
RMS
or DC.
Order Information
For additional information on the available options refer to
Option Information.
Part
Remarks
SFH618A-2
CTR 63 - 125 %, DIP-4
SFH618A-3
CTR 100 - 200 %, DIP-4
SFH618A-4
CTR 160 - 320 %, DIP-4
SFH618A-5
CTR 250 - 500 %, DIP-4
SFH6186-2
CTR 63 - 125 %, SMD-4
SFH6186-3
CTR 100 - 200 %, SMD-4
SFH6186-4
CTR 160 - 320 %, SMD-4
SFH6186-5
CTR 250 - 500 %, SMD-4
SFH618A-3X006
CTR 100 - 200 %, DIP-4 400 mil (option 6)
SFH618A-3X007
CTR 100 - 200 %, SMD-4 (option 7)
SFH618A-4X006
CTR 160 - 320 %, DIP-4 400 mil (option 6)
SFH618A-5X006
CTR 250 - 500 %, DIP-4 400 mil (option 6)
SFH618A-5X007
CTR 250 - 500 %, SMD-4 (option 7)
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2
Document Number 83673
Rev. 1.5, 20-Apr-04
VISHAY
SFH618A / SFH6186
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V
R
6.0
V
Power dissipation
P
diss
70
mW
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter voltage
V
CE
55
V
Emitter-collector voltage
V
EC
7.0
V
Collector current
I
C
50
mA
t
p
1.0 ms
I
C
100
mA
Power dissipation
P
diss
150
mW
Parameter
Test condition
Symbol
Value
Unit
Isolation test voltage between
emitter and detector, refer to
Climate DIN 40046, part2,
Nov.74
V
ISO
5300
V
RMS
Creepage distance
7.0
mm
Clearance
7.0
mm
Insulation thickness between
emitter and detector
0.4
mm
Comparative tracking index per
DIN IEC 112/VDEO 303, part 1
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 C
R
IO
10
12
V
IO
= 500 V, T
amb
= 100 C
R
IO
10
11
Storage temperature range
T
stg
- 55 to +150
C
Ambient temperature range
T
amb
- 55 to +100
C
Junction temperature
T
j
100
C
Soldering temperature
max. 10 s. Dip Soldering
distance to seating plane
1.5 mm
T
sld
260
C
VISHAY
SFH618A / SFH6186
Document Number 83673
Rev. 1.5, 20-Apr-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
0
50
100
150
200
0
25
50
75
100
125
150
18485
P
Power Dissipation (mW)
tot
Phototransistor
Diode
T
amb
Ambient Temperature ( C )
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 5.0 mA
V
F
1.1
1.5
V
Reverse current
V
R
= 6.0 V
I
R
.01
10
A
Capacitance
V
R
= 0 V, f = 1.0 MHz
C
O
25
pF
Thermal resistance
R
thja
1070
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter leakage
current
V
CE
= 10 V
I
CEO
10
200
nA
Collector-emitter capacitance
V
CE
= 5.0 V, f = 1.0 MHz
C
CE
7
pF
Thermal resistance
R
thja
500
K/W
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Collector-emitter saturation
voltage
I
C
= 0.32 mA, I
F
= 1.0 mA
SFH618A-2
SFH6186-2
V
CEsat
0.25
0.4
V
I
C
= 0.5 mA, I
F
= 1.0 mA
SFH618A-3
SFH6186-3
V
CEsat
0.25
0.4
V
I
C
= 1.25 mA, I
F
= 1.0 mA
SFH618A-4
SFH6186-4
V
CEsat
0.25
0.4
V
I
C
= 0.8 mA, I
F
= 1.0 mA
SFH618A-5
SFH6186-5
V
CEsat
0.25
0.4
V
Coupling capacitance
C
C
0.25
pF
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4
Document Number 83673
Rev. 1.5, 20-Apr-04
VISHAY
SFH618A / SFH6186
Vishay Semiconductors
Current Transfer Ratio
Switching Characteristics
Typical
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
I
C
/I
F
I
F
= 1.0 mA, V
CE
= 0.5 V
SFH618A-2
SFH6186-2
CTR
63
125
%
I
F
= 0.5 mA, V
CE
= 1.5 V
SFH618A-2
SFH6186-2
CTR
32
75
%
I
F
= 1.0 mA, V
CE
= 0.5 V
SFH618A-3
SFH6186-3
CTR
100
200
%
I
F
= 0.5 mA, V
CE
= 1.5 V
SFH618A-3
SFH6186-3
CTR
50
120
%
I
F
= 1.0 mA, V
CE
= 0.5 V
SFH618A-4
SFH6186-4
CTR
160
320
%
I
F
= 0.5 mA, V
CE
= 1.5 V
SFH618A-4
SFH6186-4
CTR
80
200
%
I
F
= 1.0 mA, V
CE
= 0.5 V
SFH618A-5
SFH6186-5
CTR
250
500
%
I
F
= 0.5 mA, V
CE
= 1.5 V
SFH618A-5
SFH6186-5
CTR
125
300
%
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Turn-on time
V
CC
= 5.0 V, I
C
= 2.0 mA,
R
L
= 100
t
on
6.0
s
Rise time
V
CC
= 5.0 V, I
C
= 2.0 mA,
R
L
= 100
t
r
3.5
s
Turn-off time
V
CC
= 5.0 V, I
C
= 2.0 mA,
R
L
= 100
t
off
5.5
s
Fall time
V
CC
= 5.0 V, I
C
= 2.0 mA,
R
L
= 100
t
f
5.0
s
Figure 2. Test Circuit
isfh618a_10
INPUT
V
OUT
V
CC
= 5 V
R
L
Figure 3. Test Circuit and Waveforms
isfh618a_12
10%
90%
Input Pulse
Output Pulse
tr
ton
tf
toff
VISHAY
SFH618A / SFH6186
Document Number 83673
Rev. 1.5, 20-Apr-04
Vishay Semiconductors
www.vishay.com
5
Typical Characteristics (Tamb = 25
C unless otherwise specified)
Figure 4. Current Transfer Ratio (typ.)
Figure 5. Current Transfer Ratio (typ.)
Figure 6. Diode Forward Voltage (typ.)
isfh618a_01
VCE = 0.5 V, CTR = f (TA)
isfh618a_01
VCE = 0.5 V, CTR = f (TA)
isfh618a_02
isfh618a_03
TA = 25C, VF = f (IF)
Figure 7. Diode Forward Voltage (typ.)
Figure 8. Transistor Capacitance
Figure 9. Output Characteristics
isfh618a_04
IF = 1.0 mA, VF = f (TA)
isfh618a_05
TA = 25C, f = 1.0 MHz,
CEE = f (VCE)
TA = 25C,
CE = f
(VCE, IF)
isfh618a_06
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6
Document Number 83673
Rev. 1.5, 20-Apr-04
VISHAY
SFH618A / SFH6186
Vishay Semiconductors
Package Dimensions in Inches (mm)
Figure 10. Permissible Forward Current Diode
isfh618a_07
IF = f (TA)
Figure 11. Switching times (typ.)
isfh618a_09
TA = 25C, IF = 1.0 mA,
VCC = 5.0 V, tON, tR,
tOFF, tF, = f (RL)
i178027
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4
typ.
.100 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
10
39
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
.050 (1.27)
ISO Method A
VISHAY
SFH618A / SFH6186
Document Number 83673
Rev. 1.5, 20-Apr-04
Vishay Semiconductors
www.vishay.com
7
Package Dimensions in Inches (mm)
i178029
.255 (6.48)
.268 (6.81)
3
4
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4 typ.
1.00 (2.54)
typ.
.130 (3.30)
.150 (3.81)
.0098 (.249)
.035 (.102)
.020 (.508)
.040 (1.02)
.031 (.79)
typ.
.050 (1.27)
typ.
.010 (.25)
typ.
10
37
.375 (9.52)
.305 (10.03)
.296 (7.52)
.312 (7.90)
.315 (8.00)
min.
Lead
coplanarity
.004 max.
SMD
ISO Method A
.100 (2.54)
R .010 (.25)
.070 (1.78)
.030 (.76)
.315 (8.00) min
.060 (1.52)
.435 (11.05)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.307 (7.8)
.291 (7.4)
.407 (10.36)
.391 (9.96)
Option 6
.315 (8.0)
MIN.
.300 (7.62)
TYP.
.180 (4.6)
.160 (4.1)
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.028 (0.7)
MIN.
Option 7
18487
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8
Document Number 83673
Rev. 1.5, 20-Apr-04
VISHAY
SFH618A / SFH6186
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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