FEATURES
D TrenchFETr Power MOSFET
D Optimized for "Low Side" Synchronous
Rectifier Operation
D 100% R
g
Tested
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
Si4362DY
Vishay Siliconix
Document Number: 71628
S-40762--Rev. E, 19-Apr-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
30
0.0045 @ V
GS
= 10 V
20
30
0.0055 @ V
GS
= 4.5 V
19
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information: Si4362DY
Si4362DY-T1 (with Tape and Reel)
Si4362DY--E3 (Lead Free)
Si4362DY-T1--E3 (Lead Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
a
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
"12
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 25_C
I
D
20
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 70_C
I
D
15
A
Pulsed Drain Current (10 ms Pulse Width)
I
DM
60
A
Continuous Source Current (Diode Conduction)
a
I
S
2.9
Maximum Power Dissipation
a
T
A
= 25_C
P
D
3.5
W
Maximum Power Dissipation
a
T
A
= 70_C
P
D
2.2
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
THERMAL RESISTANCE RATINGS
a
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
R
thJA
29
35
_C/W
Maximum Junction-to-Foot (Drain)
R
thJF
13
16
_C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board, t v 10 sec
Si4362DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71628
S-40762--Rev. E, 19-Apr-04
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
0.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "12 V
"100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
5
mA
On-State Drain Current
a
I
D(on)
V
DS
w 5 V, V
GS
= 10
V
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 20 A
0.0035
0.0045
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 19 A
0.0042
0.0055
W
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
90
S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.75
1.1
V
Dynamic
b
Total Gate Charge
Q
g
42
55
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 4.5 V, I
D
= 20 A
12.8
nC
Gate-Drain Charge
Q
gd
7.7
Gate Resistance
R
G
0.5
1.3
2.2
W
Turn-On Delay Time
t
d(on)
17
30
Rise Time
t
r
V
DD
= 15 V, R
L
= 15 W
14
25
Turn-Off Delay Time
t
d(off)
V
DD
= 15 V, R
L
= 15 W
I
D
^ 1 A, V
GEN
= 10 V, R
g
= 6 W
158
230
ns
Fall Time
t
f
43
65
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
50
80
Notes
a.
Pulse test; pulse width v
300 ms, duty cycle v
2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
60
0
2
4
6
8
10
V
GS
= 10 thru 3 V
25_C
T
C
= 125_C
-55_C
2 V
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
Si4362DY
Vishay Siliconix
Document Number: 71628
S-40762--Rev. E, 19-Apr-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.000
0.002
0.004
0.006
0.008
0.010
0
10
20
30
40
50
0
1
2
3
4
5
0
10
20
30
40
50
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
C
rss
V
DS
= 15 V
I
D
= 20 A
V
GS
= 10 V
I
D
= 20 A
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
-
On-Resistance (
r
DS(on)
W
)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
V
GS
= 4.5 V
1.0
1.2
0.000
0.005
0.010
0.015
0.020
0.025
0
2
4
6
8
10
1
10
50
I
D
= 20 A
0.00
0.2
0.4
0.6
0.8
T
J
= 25_C
T
J
= 150_C
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
0
2000
4000
6000
8000
0
6
12
18
24
30
C
oss
C
iss
r
DS
(
on)
-
On-Resiistance
(Normalized)
Si4362DY
Vishay Siliconix
www.vishay.com
4
Document Number: 71628
S-40762--Rev. E, 19-Apr-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
30
60
10
20
Power (W)
Single Pulse Power
Time (sec)
40
50
10
-3
10
-2
1
10
600
10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fec
tive T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 67_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1
100
600
10
10
-1
10
-2
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250 mA
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (_C)
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