FEATURES
D TrenchFETr Power MOSFET
Si4410DY
Vishay Siliconix
Document Number: 71726
S-40838--Rev. L, 03-May-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
I
D
(A)
30
0.0135 @ V
GS
= 10 V
10
30
0.020 @ V
GS
= 4.5 V
8
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information: Si4410DY-REVA
Si4410DY-T1-REVA (with Tape and Reel)
Si4410DY-REVA-E3 (Lead free)
Si4410DY-T1-A-E3 (Lead free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
"20
V
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 25_C
I
D
10
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 70_C
I
D
8
A
Pulsed Drain Current
I
DM
50
A
Continuous Source Current (Diode Conduction)
a
I
S
2.3
Maximum Power Dissipation
a
T
A
= 25_C
P
D
2.5
W
Maximum Power Dissipation
a
T
A
= 70_C
P
D
1.6
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
a
R
thJA
50
_C/W
Maximum Junction-to-Foot (Drain)
R
thJF
22
_C/W
Notes
a.
Surface Mounted on FR4 Board, t v 10 sec.
Si4410DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71726
S-40838--Rev. L, 03-May-04
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
1.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
25
mA
On-State Drain Current
a
I
D(on)
V
DS
w 5 V, V
GS
= 10 V
20
A
Drain Source On State Resistance
a
r
DS( )
V
GS
= 10 V, I
D
=10 A
0.011
0.0135
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 5 A
0.015
0.020
W
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 10 A
38
S
Diode Forward Voltage
a
V
SD
I
S
= 2.3 A, V
GS
= 0 V
0.7
1.1
V
Dynamic
b
Gate Charge
Q
g
V
DS
= 15 V,
V
GS
= 5 V, I
D
= 10 A
20
34
Total Gate Charge
Q
gt
V
DS
= 15 V
V
GS
= 10 V I
D
= 10 A
37
60
nC
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 10 A
7
nC
Gate-Drain Charge
Q
gd
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 10 A
7.0
Gate Resistance
R
g
0.5
1.5
2.6
W
Turn-On Delay Time
t
d(on)
19
30
Rise Time
t
r
V
DD
= 25 V, R
L
= 25 W
9
20
Turn-Off Delay Time
t
d(off)
V
DD
= 25 V, R
L
= 25 W
I
D
^ 1 A, V
GEN
= 10 V, R
G
= 6 W
70
100
ns
Fall Time
t
f
20
80
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.3 A, di/dt = 100 A/ms
40
80
Notes
a.
Pulse test; pulse width v
300 ms, duty cycle v
2%.
b.
Guaranteed by design, not subject to production testing. Values shown are for product revision A.
Si4410DY
Vishay Siliconix
Document Number: 71726
S-40838--Rev. L, 03-May-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
500
1000
1500
2000
2500
3000
0
6
12
18
24
30
0
10
20
30
40
50
0
2
4
6
8
10
0
2
4
6
8
10
0
8
16
24
32
40
0.0
0.5
1.0
1.5
2.0
-50
-25
0
25
50
75
100
125
150
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0
10
20
30
40
50
0
10
20
30
40
50
0
1
2
3
4
5
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I D
V
GS
= 10 V thru 4 V
3 V
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I D
T
C
= 125_C
25_C
-55_C
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 10 A
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 10 A
T
J
- Junction Temperature (_C)
V
GS
= 4.5 V
V
GS
= 10 V
r
DS
(
on)
- On-Resistance (
W)
r
DS
(
on)
- On-Resistance (
W)
(Normalized)
Si4410DY
Vishay Siliconix
www.vishay.com
4
Document Number: 71726
S-40838--Rev. L, 03-May-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.00
0.02
0.04
0.06
0.08
0.10
0
2
4
6
8
10
0
20
40
60
80
0.01
0.10
1.00
10.00
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Normalized Ef
fective
T
ransient
Thermal Impedance
30
-
On-Resistance (
r
DS(on)
W
)
V
GS
- Gate-to-Source Voltage (V)
T
J
- Temperature (_C)
Time (sec)
Power (W)
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
0.6
-50
-25
0
25
50
75
100
125
150
I
D
= 10 A
I
D
= 250 mA
V
ariance (V)
V
GS(th)
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 50
_
C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Source-Drain Diode Forward Voltage
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I S
40
T
J
= 25_C
T
J
= 150_C
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