Si4412ADY
Vishay Siliconix
Document Number: 71105
S-03951--Rev. B, 26-May-03
www.vishay.com
2-1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
30
0.024 @ V
GS
= 10 V
8
30
0.035 @ V
GS
= 4.5 V
6.6
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
D
G
S
D
D
S S
Ordering Information: Si4412ADY
Si4412ADY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
"
20
V
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
8
5.8
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
6.4
4.6
A
Pulsed Drain Current (10
m
s Pulse Width)
I
DM
30
A
Continuous Source Current (Diode Conduction)
a
I
S
2.3
1.2
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
2.5
1.3
W
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
1.6
0.8
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
M i
J
ti
t A bi t
a
t
v
10 sec
R
45
50
Maximum Junction-to-Ambient
a
Steady State
R
thJA
80
95
_
C/W
Maximum Junction-to-Foot
Steady State
R
thJF
16
20
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si4412ADY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 71105
S-03951--Rev. B, 26-May-03
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55
_
C
5
m
A
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10
V
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 8 A
0.020
0.024
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 6.6 A
0.029
0.035
W
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 8 A
21
S
Diode Forward Voltage
a
V
SD
I
S
= 2.3 A, V
GS
= 0 V
0.75
1.1
V
Dynamic
b
Total Gate Charge
Q
g
16
20
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 2 A
3
nC
Gate-Drain Charge
Q
gd
1.5
Gate Resistance
R
g
0.5
2.0
W
Turn-On Delay Time
t
d(on)
15
20
Rise Time
t
r
V
DD
= 15 V, R
L
= 15
W
6
12
Turn-Off Delay Time
t
d(off)
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
26
50
ns
Fall Time
t
f
10
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.3 A, di/dt = 100 A/
m
s
40
80
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
6
12
18
24
30
0
1
2
3
4
5
V
GS
= 10 thru 5 V
T
C
= -125
_
C
-55
_
C
3 V
25
_
C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
4 V
Si4412ADY
Vishay Siliconix
Document Number: 71105
S-03951--Rev. B, 26-May-03
www.vishay.com
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-
On-Resistance (
r
DS(on)
W
)
0
200
400
600
800
1000
1200
0
6
12
18
24
30
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
4
8
12
16
0.00
0.01
0.02
0.03
0.04
0.05
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 2 A
I
D
- Drain Current (A)
V
GS
= 10 V
I
D
= 8 A
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
C
-
Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (
_
C)
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.02
0.04
0.06
0.08
0.10
0
2
4
6
8
10
T
J
= 25
_
C
I
D
= 3.9 A
30
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
V
GS
= 4.5 V
T
J
= 150
_
C
Si4412ADY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 71105
S-03951--Rev. B, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
30
50
10
20
Power (W)
Single Pulse Power
Time (sec)
40
10
-3
10
-2
1
10
600
10
-1
10
-4
100
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250
m
A
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (
_
C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80
_
C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1
100
600
10
10
-1
10
-2
10
-3
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