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Электронный компонент: SI4559EY

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Si4559EY
Vishay Siliconix
Document Number: 70167
S-57253--Rev. D, 24-Feb-98
www.vishay.com
S
FaxBack 408-970-5600
2-1
N-Channel 60-V (D-S), 175
C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
N-Channel
60
0.055 @ V
GS
= 10 V
"
4.5
N-Channel
60
0.075 @ V
GS
= 4.5 V
"
3.9
P-Channel
60
0.120 @ V
GS
= 10 V
"
3.1
P-Channel
60
0.150 @ V
GS
= 4.5 V
"
2.8
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
1
D
1
G
1
S
1
S
2
G
2
D
2
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
V
DS
60
60
V
Gate-Source Voltage
V
GS
"
20
"
20
V
Continuous Drain Current
(T
J
= 175
_
C)
a
T
A
= 25
_
C
I
D
"
4.5
"
3.1
A
Continuous Drain Current
(T
J
= 175
_
C)
a
T
A
= 70
_
C
I
D
"
3.8
"
2.6
A
Pulsed Drain Current
I
DM
"
30
"
30
A
Continuous Source Current (Diode Conduction)
a
I
S
2.0
2.0
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
2.4
W
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
1.7
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N- or P- Channel
Unit
Maximum Junction-to-Ambient
a
R
thJA
62.5
_
C/W
Notes
a.
Surface Mounted on FR4 Board, t
v
10 sec.
Si4559EY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 70167
S-57253--Rev. D, 24-Feb-98
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
N-Ch
1
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
P-Ch
1
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
N-Ch
"
100
nA
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
P-Ch
"
100
nA
Z
G
V l
D i C
I
V
DS
= 60 V, V
GS
= 0 V
N-Ch
2
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
P-Ch
2
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55
_
C
N-Ch
25
m
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55
_
C
P-Ch
25
On-State Drain Current
b
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
N-Ch
20
A
On-State Drain Current
b
I
D(on)
V
DS
v
5 V, V
GS
= 10 V
P-Ch
20
A
D i S
O S
R
i
b
V
GS
= 10 V, I
D
= 4.5 A
N-Ch
0.045
0.055
W
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 3.1 A
P-Ch
0.100
0.120
W
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 3.9 A
N-Ch
0.055
0.075
W
V
GS
= 4.5 V, I
D
= 2.8 A
P-Ch
0.125
0.150
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 4.5 A
N-Ch
13
S
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 3.1 A
P-Ch
7.5
S
Diode Forward Voltage
b
V
SD
I
S
= 2.0 A, V
GS
= 0 V
N-Ch
0.9
1.2
V
Diode Forward Voltage
b
V
SD
I
S
= 2.0 A, V
GS
= 0 V
P-Ch
0.8
1.2
V
Dynamic
a
Total Gate Charge
Q
g
N Ch
l
N-Ch
19
30
C
Total Gate Charge
Q
g
N-Channel
V
30
V V
10 V I
4 5 A
P-Ch
16
25
C
Gate-Source Charge
Q
gs
V
DS
=
30
V,
V
GS
= 10 V, I
D
= 4.5 A
N-Ch
4
nC
Gate-Source Charge
Q
gs
P-Channel
V
DS
= 30 V,
V
GS
= 10 V
P-Ch
4
nC
Gate-Drain Charge
Q
gd
V
DS
= 30 V,
V
GS
= 10 V
I
D
= 3.1A
N-Ch
3
Gate-Drain Charge
Q
gd
P-Ch
1.6
Turn-On Delay Time
t
d(on)
N Ch
l
N-Ch
13
20
Turn-On Delay Time
t
d(on)
N Ch
l
P-Ch
8
15
Rise Time
t
r
N-Channel
V
DD
= 30 V, R
L
= 30
W
N-Ch
11
20
Rise Time
t
r
V
DD
= 30 V, R
L
= 30
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
P-Ch
10
20
Turn-Off Delay Time
t
d(off)
P-Channel
V
30 V R
30
W
N-Ch
36
60
ns
Turn-Off Delay Time
t
d(off)
V
DD
= 30 V, R
L
= 30
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
P-Ch
12
25
ns
Fall Time
t
f
I
D
1
A,
V
GEN
10
V,
R
G
6
W
N-Ch
11
20
Fall Time
t
f
P-Ch
35
50
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2 A, di/dt = 100 A/
m
s
N-Ch
35
60
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2 A, di/dt = 100 A/
m
s
P-Ch
60
90
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
Si4559EY
Vishay Siliconix
Document Number: 70167
S-57253--Rev. D, 24-Feb-98
www.vishay.com
S
FaxBack 408-970-5600
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N CHANNEL
C
rss
0
6
12
18
24
30
0
1
2
3
4
5
0
2
4
6
8
10
0
4
8
12
16
20
0.4
0.7
1.0
1.3
1.6
1.9
2.2
50
25
0
25
50
75
100
125
150
175
0
0.025
0.050
0.075
0.100
0.125
0.150
0
6
12
18
24
30
0
200
400
600
800
1000
1200
1400
0
12
24
36
48
60
0
6
12
18
24
30
0
1
2
3
4
5
6
V
GS
= 10 thru 5 V
4 V
V
GS
= 10 V
V
DS
= 30 V
I
D
= 4.5 A
V
GS
= 10 V
I
D
= 4.5 A
C
oss
C
iss
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage
(V)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
V
GS
On-Resistance (
r
DS(on)
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r
DS(on)
)
150
_
C
T
C
= 55
_
C
25
_
C
V
GS
= 4.5 V
3 V
2, 1 V
Si4559EY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70167
S-57253--Rev. D, 24-Feb-98
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N CHANNEL
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
0.1
0.01
10
4
10
3
10
2
10
1
1
10
30
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 62.5
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
Notes:
4. Surface Mounted
P
DM
t
2
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
Single Pulse Power
Time (sec)
Power (W)
50
40
30
20
10
0
0.01
0.1
1
10
30
0
0.02
0.04
0.06
0.08
0.10
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.0
0.8
0.6
0.4
0.2
0.0
0.2
0.4
50
25
0
25
50
75
100
125
150
175
1
10
20
I
D
= 4.5 A
I
D
= 250
A
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
On-Resistance (
r
DS(on)
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Source Current (A)
I
S
T
J
Temperature (
_
C)
V
ariance (V)
V
GS(th)
T
J
= 25
_
C
T
J
= 175
_
C
Si4559EY
Vishay Siliconix
Document Number: 70167
S-57253--Rev. D, 24-Feb-98
www.vishay.com
S
FaxBack 408-970-5600
2-5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P CHANNEL
0
6
12
18
24
30
0
1
2
3
4
5
6
0
2
4
6
8
10
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
50
25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
0
4
8
12
16
20
0
200
400
600
800
1000
1200
1400
0
10
20
30
40
50
60
0
4
8
12
16
20
0
2
4
6
8
V
GS
= 10, 9, 8, 7, 6 V
3 V
4 V
V
GS
= 4.5 V
V
GS
= 10 V
V
DS
= 30 V
I
D
= 3.1 A
V
GS
= 10 V
I
D
= 3.1 A
C
rss
C
oss
C
iss
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage
(V)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
V
GS
On-Resistance (
r
DS(on)
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r
DS(on)
)
T
C
= 55
_
C
150
_
C
25
_
C
5 V