FEATURES
D LITTLE FOOTr
Plus
Power MOSFET
D 100% R
g
Tested
Si4812DY
Vishay Siliconix
Document Number: 71775
S-41426--Rev. G, 26-Jul-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
30
0.018 @ V
GS
= 10 V
9
30
0.028 @ V
GS
= 4.5 V
7.3
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
30
0.50 V @ 1.0 A
1.4
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
G
S
Schottky Diode
D
Ordering Information:
Si4812DY
Si4812DY-T1 (with Tape and Reel)
Si4812DY--E3 (Lead (Pb)-Free)
Si4812DY-T1--E3 (Lead (Pb)-Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limit
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage (MOSFET)
V
DS
30
Reverse Voltage (Schottky)
V
DS
30
V
Gate-Source Voltage (MOSFET)
V
GS
"20
V
Continuous Drain Current
(T
J
= 150_C) (MOSFET)
a, b
T
A
= 25_C
I
D
9
6.9
Continuous Drain Current
(T
J
= 150_C) (MOSFET)
a, b
T
A
= 70_C
I
D
7.5
5.6
Pulsed Drain Current (MOSFET)
I
DM
50
A
Continuous Source Current (MOSFET Diode Conduction)
a, b
I
S
2.1
1.2
A
Average Foward Current (Schottky)
I
F
1.4
0.8
Pulsed Foward Current (Schottky)
I
FM
30
Maximum Power Dissipation (MOSFET)
a b
T
A
= 25_C
2.5
1.4
Maximum Power Dissipation (MOSFET)
a, b
T
A
= 70_C
P
D
1.6
0.9
W
Maximum Power Dissipation (Schottky)
a b
T
A
= 25_C
P
D
2.0
1.2
W
Maximum Power Dissipation (Schottky)
a, b
T
A
= 70_C
1.3
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
M i
J
ti
t A bi t (t 10
)
a
MOSFET
40
50
Maximum Junction-to-Ambient (t v 10 sec)
a
Schottky
R
50
60
_C/W
Maximum Junction to Ambient (t steady state)
a
MOSFET
R
thJA
72
90
_C/W
Maximum Junction-to-Ambient (t = steady state)
a
Schottky
85
100
Notes
a.
Surface Mounted on FR4 Board.
b.
t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Si4812DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71775
S-41426--Rev. G, 26-Jul-04
MOSFET + SCHOTTKY SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
1
3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100
nA
V
DS
= 30 V, V
GS
= 0 V
0.004
0.100
Zero Gate Voltage Drain Current
(MOSFET + Schottky)
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100_C
0.7
10
mA
(MOSFET + Schottky)
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C
3.0
20
On-State Drain Current
a
I
D(on)
V
DS
w 5 V, V
GS
= 10 V
20
A
Drain Source On State Resistance
a
r
V
GS
= 10 V, I
D
= 9 A
0.012
0.018
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
=
7.3 A
0.019
0.028
W
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 9 A
23
S
Schottky Diode Forward Voltage
a
V
SD
I
S
= 1.0 A, V
GS
= 0 V
0.45
0.50
V
Schottky Diode Forward Voltage
a
V
SD
I
S
= 1.0 A, V
GS
= 0 V, T
J
= 125_C
0.33
0.42
V
Dynamic
b
Total Gate Charge
Q
g
13
24
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 5 V, I
D
= 9 A
4
nC
Gate-Drain Charge
Q
gd
5.7
Gate Resistance
R
g
0.2
2.4
W
Turn-On Delay Time
t
d(on)
16
25
Rise Time
t
r
V
DD
= 15 V, R
L
= 15 W
10
20
Turn-Off Delay Time
t
d(off)
V
DD
= 15 V, R
L
= 15 W
I
D
^ 1 A, V
GEN
= 10 V, R
g
= 6 W
35
50
ns
Fall Time
t
f
13
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.0 A, di/dt = 100 A/ms
35
70
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
Si4812DY
Vishay Siliconix
Document Number: 71775
S-41426--Rev. G, 26-Jul-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
5
10
15
20
25
V
DS
= 15 V
I
D
= 9 A
V
GS
= 10 V
I
D
= 9 A
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
-
On-Resistance (
r
DS(on)
W
)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
0
10
20
30
40
50
0
1
2
3
4
5
0
300
600
900
1200
1500
1800
0
5
10
15
20
25
30
0
10
20
30
40
50
0
1
2
3
4
5
0.00
0.02
0.04
0.06
0.08
0.10
0
10
20
30
40
50
V
GS
= 10 thru 5 V
T
C
= 125_C
-55_C
C
rss
C
oss
C
iss
V
GS
= 10 V
V
GS
= 4.5 V
3 V
25_C
4 V
r
DS
(
on)
-
On-Resiistance
(Normalized)
Si4812DY
Vishay Siliconix
www.vishay.com
4
Document Number: 71775
S-41426--Rev. G, 26-Jul-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Power (W)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (MOSFET)
Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
Time (sec)
0.00
0.02
0.04
0.06
0.08
0.10
0
2
4
6
8
10
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
10
100
600
T
J
= 150_C
T
J
= 25_C
I
D
= 9.0 A
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 72_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
50
1
0.1
10
600
100
10
1
0.1
0.01
1
125
150
0.0001
1
20
Reverse Current (Schottky)
T
J
- Junction Temperature (_C)
-
Reverse Current (mA)
I
R
0
25
50
75
100
10 V
0.001
0.01
0.1
10
20 V
30 V
Si4812DY
Vishay Siliconix
Document Number: 71775
S-41426--Rev. G, 26-Jul-04
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
10
30
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
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