Si4824DY
Vishay Siliconix
Document Number: 70800
S-56946--Rev. C, 23-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
2-1
Asymmetric N-Channel, Reduced Q
g
, Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
N-Channel 1
30
0.040 @ V
GS
= 10 V
"
4.7
N-Channel 1
30
0.065 @ V
GS
= 4.5 V
"
3.7
N-Channel 2
30
0.0175 @ V
GS
= 10 V
"
9
N-Channel 2
0.027 @ V
GS
= 4.5 V
"
7.3
S
1
D
1
G
1
D
2
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET 1
D
1
G
1
S
1
N-Channel MOSFET 2
D
2
D
2
G
2
S
2
D
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel 1
N-Channel 2
Unit
Drain-Source Voltage
V
DS
30
30
V
Gate-Source Voltage
V
GS
"
20
"
20
V
Continuous Drain Current
(T
J
= 150
_
C)
a, b
T
A
= 25
_
C
I
D
"
4.7
"
9
A
Continuous Drain Current
(T
J
= 150
_
C)
a, b
T
A
= 70
_
C
I
D
"
3.7
"
7.2
A
Pulsed Drain Current
I
DM
"
40
"
60
A
Continuous Source Current (Diode Conduction)
a, b
I
S
1.2
2.0
Maximum Power Dissipation
a, b
T
A
= 25
_
C
P
D
1.4
2.25
W
Maximum Power Dissipation
a, b
T
A
= 70
_
C
P
D
0.9
1.5
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
M
i
J
i
A bi
a
N-Ch 1
t
v
10 sec
R
90
_
C/W
Maximum Junction-to-Ambient
a
N-Ch 1
Steady State
R
thJA
125
_
C/W
Maximum Junction-to-Ambient
a
N-Ch 2
t
v
10 sec
R
thJA
55
_
C/W
N-Ch 2
Steady State
80
Notes
a.
Surface Mounted on FR4 Board.
b.
t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Si4824DY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 70800
S-56946--Rev. C, 23-Nov-98
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
N-Ch 1
1.0
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
N-Ch 2
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
N-Ch 1
"
100
nA
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
N-Ch 2
"
100
nA
Z
G
V l
D i C
I
V
DS
= 24 V, V
GS
= 0 V
N-Ch 1
1
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
N-Ch 2
1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55
_
C
N-Ch 1
5
m
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55
_
C
N-Ch 2
5
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
N-Ch 1
20
A
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
N-Ch 2
30
A
D i S
O S
R
i
a
V
GS
= 10 V, I
D
= 4.7 A
N-Ch 1
0.033
0.040
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 9 A
N-Ch 2
0.014
0.0175
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 3.7 A
N-Ch 1
0.048
0.065
W
V
GS
= 4.5 V, I
D
= 7.3 A
N-Ch 2
0.020
0.027
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 4.7 A
N-Ch 1
12
S
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 9 A
N-Ch 2
25
S
Diode Forward Voltage
a
V
SD
I
S
= 1.2 A, V
GS
= 0 V
N-Ch 1
0.7
1.2
V
Diode Forward Voltage
a
V
SD
I
S
= 2.0 A, V
GS
= 0 V
N-Ch 2
0.7
1.2
V
Dynamic
b
Total Gate Charge
Q
g
N Ch
l 1
N-Ch 1
6.5
10
C
Total Gate Charge
Q
g
N-Channel 1
V
DS
= 15 V V
GS
= 5 V I
D
= 4 7 A
N-Ch 2
17.5
27
C
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 5 V, I
D
= 4.7 A
N-Channel 2
N-Ch 1
3.0
nC
Gate-Source Charge
Q
gs
N-Channel 2
V
DS
= 15 V,
V
GS
= 5 V, I
D
= 9 A
N-Ch 2
7.5
nC
Gate-Drain Charge
Q
gd
N-Ch 1
2.5
Gate-Drain Charge
Q
gd
N-Ch 2
6.5
Turn-On Delay Time
t
d(on)
N Ch
l 1
N-Ch 1
10
20
Turn-On Delay Time
t
d(on)
N-Channel 1
N-Ch 2
15
30
Rise Time
t
r
N-Channel 1
V
DD
= 15 V, R
L
=15
W
I
D
^
1 A V
GEN
= 10 V R
G
= 6
W
N-Ch 1
12
20
Rise Time
t
r
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
N-Channel 2
N-Ch 2
15
30
Turn-Off Delay Time
t
d(off)
N-Channel 2
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A V
GEN
= 10 V R
G
= 6
W
N-Ch 1
20
35
ns
Turn-Off Delay Time
t
d(off)
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
N-Ch 2
45
70
ns
Fall Time
t
f
N-Ch 1
10
20
Fall Time
t
f
N-Ch 2
20
35
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.2 A, di/dt = 100 A/
m
s
N-Ch 1
40
80
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.0 A, di/dt = 100 A/
m
s
N-Ch 2
40
80
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
For design aid only; not subject to production testing.
Si4824DY
Vishay Siliconix
Document Number: 70800
S-56946--Rev. C, 23-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N CHANNEL 1
0
10
20
30
40
0
1
2
3
4
0
2
4
6
8
10
0
3
6
9
12
0.75
0.95
1.15
1.35
1.55
50
25
0
25
50
75
100
125
150
0
0.02
0.04
0.06
0.08
0.10
0
10
20
30
40
0
200
400
600
800
1000
1200
0
6
12
18
24
30
0
10
20
30
40
0
1
2
3
4
5
6
7
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
4 V
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
T
C
= 55
_
C
125
_
C
Gate-to-Source V
oltage
(V)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
V
GS
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 4.7 A
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 4.7 A
T
J
Junction Temperature (
_
C)
V
GS
= 4.5 V
V
GS
= 10 V
25
_
C
3 V
V
GS
= 10 thru 6 V
2 V
5 V
On-Resistance (
r
DS(on)
W
)
(Normalized)
On-Resistance (
r
DS(on)
W
)
Si4824DY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70800
S-56946--Rev. C, 23-Nov-98
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N CHANNEL 1
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
2
1
0.1
0.001
10
4
10
3
10
2
10
1
1
10
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 125
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
0
0.02
0.04
0.06
0.08
0.10
0
2
4
6
8
10
0.95
0.75
0.55
0.35
0.15
0.05
0.25
0.45
50
25
0
25
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
On-Resistance (
r
DS(on)
W
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
T
J
Temperature (
_
C)
Time (sec)
Power (W)
I
D
= 4.7 A
I
D
= 250
m
A
V
ariance (V)
V
GS(th)
40
1
0.4
0.8
1.6
Source-Drain Diode Forward Voltage
Source Current (A)
I
S
T
J
= 150
_
C
T
J
= 25
_
C
30
24
18
12
6
0
0
1.2
10
100
600
0.01
600
100
10
1
0.10
0.01
Si4824DY
Vishay Siliconix
Document Number: 70800
S-56946--Rev. C, 23-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
2-5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N CHANNEL 2
0
10
20
30
40
50
60
0
1
2
3
4
0
2
4
6
8
10
0
4
8
12
16
20
24
28
32
0.75
0.85
0.95
1.05
1.15
1.25
1.35
1.45
1.55
50
25
0
25
50
75
100
125
150
0.01
0.015
0.020
0.025
0.030
0.035
0.040
0
10
20
30
40
50
60
200
900
1600
2300
3000
0
6
12
18
24
30
0
10
20
30
40
50
60
0
1
2
3
4
5
6
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
= 10 thru 5 V
4 V
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
T
C
= 125
_
C
55
_
C
Gate-to-Source V
oltage
(V)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
V
GS
C
rss
C
oss
C
iss
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
V
GS
= 4.5 V
V
GS
= 10 V
25
_
C
3 V
2 V
V
DS
= 15 V
I
D
= 9 A
V
GS
= 10 V
I
D
= 9 A
On-Resistance (
r
DS(on)
W
)
(Normalized)
On-Resistance (
r
DS(on)
W
)
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