Si6802DQ
Vishay Siliconix
Document Number: 70188
S-49520--Rev. C, 18-Dec-96
www.vishay.com
S
FaxBack 408-970-5600
2-1
N-Channel, Reduced Q
g
, Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
20
0.075 @ V
GS
= 4.5 V
"
3.3
20
0.110 @ V
GS
= 3.0 V
"
2.7
D
G
S*
N-Channel MOSFET
Si6802DQ
D
S
S
G
1
2
3
4
8
7
6
5
D
S
S
D
TSSOP-8
Top View
D
*Source Pins 2, 3, 6, and 7
must be tied common.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
"
12
V
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
"
3.3
A
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70
_
C
I
D
"
2.6
A
Pulsed Drain Current
I
DM
"
20
A
Continuous Source Current (Diode Conduction)
a
I
S
1.25
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
1.5
W
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
1.0
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
a
R
thJA
83
_
C/W
Notes
a.
Surface Mounted on FR4 Board, t
v
10 sec.
Si6802DQ
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 70188
S-49520--Rev. C, 18-Dec-96
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
0.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
12 V
"
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70
_
C
25
m
A
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 4.5 V
15
A
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 3.0 V
6
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 3.3 A
0.048
0.075
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 3.0 V, I
D
= 2.7 A
0.067
0.110
W
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 3.3 A
10.3
S
Diode Forward Voltage
a
V
SD
I
S
= 1.25 A, V
GS
= 0 V
0.7
1.2
V
Dynamic
b
Total Gate Charge
Q
g
V
6 V V
4 5 V I
0 3 A
4.5
9.0
C
Gate-Source Charge
Q
gs
V
DS
= 6 V,
V
GS
= 4.5 V, I
D
= 0.3 A
1.0
nC
Gate-Drain Charge
Q
gd
0.7
Turn-On Delay Time
t
d(on)
V
6 V R
20
W
8
20
Rise Time
t
r
V
DD
= 6 V, R
L
= 20
W
I
0 3 A V
4 5 V R
6
W
6
15
Turn-Off Delay Time
t
d(off)
DD
,
L
I
D
^
0.3 A, V
GEN
= 4.5 V, R
G
= 6
W
12
25
ns
Fall Time
t
f
16
30
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.25 A, di/dt = 100 A/
m
s
52
80
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
Si6802DQ
Vishay Siliconix
Document Number: 70188
S-49520--Rev. C, 18-Dec-96
www.vishay.com
S
FaxBack 408-970-5600
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
4
8
12
16
20
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
50
25
0
25
50
75
100
125
150
0
0.06
0.12
0.18
0.24
0.30
0
4
8
12
16
20
0
300
600
900
1200
0
4
8
12
16
20
0
4
8
12
16
20
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
= 4.5, 4, 3.5, 3 V
1.5 V
2 V
V
GS
= 3 V
I
D
= 0.3 A
V
GS
= 4.5 V
I
D
= 3.3 A
C
rss
C
oss
C
iss
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage
(V)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
V
GS
On-Resistance (
r
DS(on)
W
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r
DS(on)
W
)
125
_
C
T
C
= 55
_
C
25
_
C
2.5 V
V
GS
= 4.5 V
V
DS
= 4.5 V
6 V
8 V
Si6802DQ
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70188
S-49520--Rev. C, 18-Dec-96
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Power (W)
0
0.06
0.12
0.18
0.24
0.30
0
2
4
6
8
0.5
0.3
0.1
0.1
0.3
0.5
50
25
0
25
50
75
100
125
150
2
1
0.1
0.01
10
4
10
3
10
2
10
1
1
10
30
1
10
20
I
D
= 3.3 A
I
D
= 250
m
A
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
0
1
40
50
10
20
30
10
30
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 83
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
On-Resistance (
r
DS(on)
W
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Source Current (A)
I
S
T
J
Temperature (
_
C)
Time (sec)
V
ariance (V)
V
GS(th)
T
J
= 25
_
C
T
J
= 150
_
C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
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