Si6968ADQ
Vishay Siliconix
New Product
Document Number: 71111
S-99586--Rev. A, 20-Dec-99
www.vishay.com
S
FaxBack 408-970-5600
2-1
N-Channel 2.5-V (G-S) Battery Switch
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
20
0.022 @ V
GS
= 4.5 V
"
6.2
20
0.030 @ V
GS
= 2.5 V
"
5.3
Si6968ADQ
D
S
1
S
1
G
1
1
2
3
4
8
7
6
5
D
S
2
S
2
G
2
TSSOP-8
Top View
D
G
1
S
1
N-Channel MOSFET
G
2
S
2
N-Channel MOSFET
D
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
"
12
V
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
"
6.2
"
5.1
A
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
"
5.3
"
3.4
A
Pulsed Drain Current (10
m
s Pulse Width)
I
DM
"
30
A
Continuous Source Current (Diode Conduction)
a
I
S
1.5
1.0
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
1.5
1.0
W
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
0.96
0.64
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a
t
v
10 sec
R
thJA
72
83
_
C/W
Maximum Junction-to-Ambient
a
Steady State
R
thJA
100
120
_
C/W
Maximum Junction-to-Foot
Steady State
R
thJF
55
70
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si6968ADQ
Vishay Siliconix
New Product
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 71111
S-99586--Rev. A, 20-Dec-99
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
0.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
12 V
"
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V
1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85
_
C
15
m
A
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 4.5
V
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5
V, I
D
= 6.2 A
0.014
0.018
0.022
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 5.3 A
0.018
0.024
0.030
W
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 6.2 A
25
S
Diode Forward Voltage
a
V
SD
I
S
= 6.2 A, V
GS
= 0 V
0.89
1.2
V
Dynamic
b
Total Gate Charge
Q
g
V
10 V V
4 5 V I
6 2 A
13.5
20
C
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 6.2 A
2
nC
Gate-Drain Charge
Q
gd
3.7
Turn-On Delay Time
t
d(on)
V
10 V R
10
W
18
30
Rise Time
t
r
V
DD
= 10 V, R
L
= 10
W
I
1 A V
4 5 V R
6
W
25
50
Turn-Off Delay Time
t
d(off)
DD
,
L
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
50
100
ns
Fall Time
t
f
25
50
Source-Drain Reverse Recovery Time
t
rr
I
F
= 6.2 A, di/dt = 100 A/
m
s
40
70
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0
0.5
1.0
1.5
2.0
2.5
3.0
0
6
12
18
24
30
0
2
4
6
8
10
V
GS
= 5 thru 2.5 V
T
C
= 125
_
C
55
_
C
2 V
25
_
C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
1.5 V
Si6968ADQ
Vishay Siliconix
New Product
Document Number: 71111
S-99586--Rev. A, 20-Dec-99
www.vishay.com
S
FaxBack 408-970-5600
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance (
r
DS(on)
W
)
0
500
1000
1500
2000
2500
0
4
8
12
16
20
0.6
0.8
1.0
1.2
1.4
1.6
50
25
0
25
50
75
100
125
150
0
1
2
3
4
5
0
3
6
9
12
15
0
0.01
0.02
0.03
0.04
0.05
0.06
0
6
12
18
24
30
V
DS
Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 10 V
I
D
= 6.2 A
I
D
Drain Current (A)
V
GS
= 4.5 V
I
D
= 6.2 A
V
GS
= 2.5 V
Gate Charge
On-Resistance vs. Drain Current
Gate-to-Source V
oltage
(V)
Q
g
Total Gate Charge (nC)
C Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r
DS(on)
W
)
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.015
0.030
0.045
0.060
0.075
0
1
2
3
4
5
T
J
= 150
_
C
T
J
= 25
_
C
I
D
= 6.2 A
20
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
On-Resistance (
r
DS(on)
W
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Source Current (A)
I
S
V
GS
= 4.5 V
Si6968ADQ
Vishay Siliconix
New Product
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 71111
S-99586--Rev. A, 20-Dec-99
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
15
30
5
10
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
20
25
10
3
10
2
1
10
600
10
1
10
4
100
0.6
0.4
0.2
0.0
0.2
0.4
50
25
0
25
50
75
100
125
150
I
D
= 250
m
A
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
Temperature (
_
C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
3
10
2
1
10
10
1
10
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1
100
10
10
1
10
2
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