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Электронный компонент: SI9110

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Si9110/9111
Vishay Siliconix
Document Number: 70004
S-40751--Rev. G, 19-Apr-04
www.vishay.com
1
High-Voltage Switchmode Controllers
FEATURES
D 10- to 120-V Input Range
D Current-Mode Control
D High-Speed, Source-Sink Output Drive
D High Efficiency Operation (> 80%)
D Internal Start-Up Circuit
D Internal Oscillator (1 MHz)
D SHUTDOWN and RESET
D Reference Selection
Si9110 - "1%
Si9111 - "10%
DESCRIPTION
The Si9110/9111 are BiC/DMOS integrated circuits designed
for use as high-performance switchmode controllers. A
high-voltage DMOS input allows the controller to work over a
wide range of input voltages (10- to 120-VDC). Current-mode
PWM control circuitry is implemented in CMOS to reduce
internal power consumption to less than 10 mW.
A push-pull output driver provides high-speed switching for
MOSPOWER devices large enough to supply 50 W of output
power. When combined with an output MOSFET and
transformer, the Si9110/9111 can be used to implement
single-ended power converter topologies (i.e., flyback,
forward, and cuk).
The Si9110/9111 are available in a standard 14-pin plastic DIP
and standard or lead (Pb)-free SOIC package, and are
specified over the and industrial, D suffix (-40 to 85_C)
temperature ranges.
FUNCTIONAL BLOCK DIAGRAM
+
-
-
+
+
-
+
-
+
-
FB
COMP
DISCHARGE
OSC
14 13
9 8
7
2 V
Ref
Gen
R
S
Q
R
S
Q
SENSE
3
5
4
11
12
Current-Mode
Comparator
C/L
1.2 V
Undervoltage
RESET
8.1 V
8.6 V
BIAS
Current
Sources
To
Internal
Circuits
10
1
6
2
Comparator
Error
Amplifier
V
REF
V
CC
+V
IN
V
CC
SHUTDOWN
4 V
OSC
OUT
OSC
IN
-V
IN
Pre-Regulator/Start-Up
OUTPUT
To
V
CC
Comparator
Clock (
1
/
2
f
OSC
)
Si9110/9111
Vishay Siliconix
www.vishay.com
2
Document Number: 70004
S-40751--Rev. G, 19-Apr-04
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to -V
IN
(Note: V
CC
< +V
IN
+ 0.3 V)
V
CC
15 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+V
IN
120 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Logic Inputs (RESET,
SHUTDOWN, OSC IN, OSC OUT)
-0.3 V to V
CC
+ 0.3 V
. . . . . . . . . . . . . . .
Linear Inputs
(FEEDBACK, SENSE, BIAS, V
REF
)
-0.3 V to V
CC
+ 0.3 V
. . . . . . . . . . . . . . .
HV Pre-Regulator Input Current (continuous)
5 mA
. . . . . . . . . . . . . . . . . . . . .
Storage Temperature
-65 to 150_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature
-40 to 85_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature (T
J
)
150_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Package)a
14-Pin Plastic DIP (J Suffix)
b
750 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14-Pin SOIC (Y Suffix)
c
900 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Impedance (Q
JA
)
14-Pin Plastic DIP
167_C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14-Pin SOIC
140_C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Device mounted with all leads soldered or welded to PC board.
b.
Derate 6 mW/_C above 25_C.
c.
Derate 7.2 mW/_C above 25_C.
RECOMMENDED OPERATING RANGE
Voltages Referenced to -V
IN
V
CC
9.5 V to 13.5 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+V
IN
10 V to 120 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
OSC
40 kHz to 1 MHz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
OSC
25 kW to 1 MW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Linear Inputs
0 to V
CC
- 3 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs
0 to V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
DISCHARGE = V
IN
= 0 V
D Suffix
-40 to 85_C
Parameter
Symbol
DISCHARGE = -V
IN
= 0 V
V
CC
= 10 V, +V
IN
= 48 V
R
BIAS
= 390 kW
, R
OSC
= 330 kW
Temp
b
Min
d
Typ
c
Max
d
Unit
Reference
Si9110
Room
3.92
4.0
4.08
Output Voltage
V
R
OSC IN = - V
IN
(OSC Disabled)
Si9111
Room
3.60
4.0
4.40
V
Output Voltage
V
R
(OSC Disabled)
R
L
= 10 MW
Si9110
Full
3.86
4.14
V
R
L
= 10 MW
Si9111
Full
3.52
4.46
Output Impedance
e
Z
OUT
Room
15
30
45
kW
Short Circuit Current
I
SREF
V
REF
= -V
IN
Room
70
100
130
mA
Temperature Stability
e
T
REF
Full
0.50
1.0
mV/_C
Oscillator
Maximum Frequency
e
f
MAX
R
OSC
= 0
Room
1
3
MHz
Initial Accuracy
f
OSC
R
OSC
= 330 k, See Note
f
Room
80
100
120
kHz
Initial Accuracy
f
OSC
R
OSC
= 150 k, See Note
f
Room
160
200
240
kHz
Voltage Stability
Df/f
Df/f=f(13.5 V) - f(9.5 V)/ f(9.5 V)
Room
10
15
%
Temperature Coefficient
e
T
OSC
Full
200
500
ppm/_C
Error Amplifier
Feedback Input Voltage
V
FB
FB Tied to COMP
OSC IN = V
IN
Si9110
Room
3.96
4.00
4.04
V
Feedback Input Voltage
V
FB
OSC IN = - V
IN
(OSC Disabled)
Si9111
Room
3.60
4.00
4.40
V
Input BIAS Current
I
FB
OSC IN = - V
IN
,
V
FB
= 4 V
Room
25
500
nA
Input OFFSET Voltage
V
OS
Room
"15
"40
mV
Open Loop Voltage Gain
e
A
VOL
OSC IN = - V
IN
Room
60
80
dB
Unity Gain Bandwidth
e
BW
OSC IN = - V
IN
(OSC Disabled)
Room
1
1.3
MHz
Dynamic Output Impedance
e
Z
OUT
Room
1000
2000
W
Output Current
I
OUT
Source (V
FB
= 3.4 V)
Room
-2.0
-1.4
mA
Output Current
I
OUT
Sink (V
FB
= 4.5 V)
Room
0.12
0.15
mA
Power Supply Rejection
PSRR
9.5 V
v V
CC
v 13.5 V
Room
50
70
dB
Si9110/9111
Vishay Siliconix
Document Number: 70004
S-40751--Rev. G, 19-Apr-04
www.vishay.com
3
SPECIFICATIONS
a
D Suffix
-40 to 85_C
Test Conditions
Unless Otherwise Specified
DISCHARGE = -V
IN
= 0 V
V
CC
= 10 V, +V
IN
= 48 V
R
BIAS
= 390 kW
, R
OSC
= 330 kW
Parameter
Unit
Max
d
Typ
c
Min
d
Temp
b
Test Conditions
Unless Otherwise Specified
DISCHARGE = -V
IN
= 0 V
V
CC
= 10 V, +V
IN
= 48 V
R
BIAS
= 390 kW
, R
OSC
= 330 kW
Symbol
Current Limit
Threshold Voltage
V
SOURCE
V
FB
= 0 V
Room
1.0
1.2
1.4
V
Delay to Output
e
t
d
V
SENSE
= 1.5 V, See Figure 1
Room
100
150
ns
Pre-Regulator/Start-Up
Input Voltage
+V
IN
I
IN
= 10 mA
Room
120
V
Input Leakage Current
+I
IN
V
CC
w 9.4 V
Room
10
mA
Pre-Regulator Start-Up Current
I
START
Pulse Width v 300 ms, V
CC
= V
ULVO
Room
8
15
mA
V
CC
Pre-Regulator Turn-Off
Threshold Voltage
V
REG
I
PRE-REGULATOR
= 10 mA
Room
7.8
8.6
9.4
V
Undervoltage Lockout
V
UVLO
Room
7.0
8.1
8.9
V
V
REG
-V
UVLO
V
DELTA
Room
0.3
0.6
Supply
Supply Current
I
CC
C
LOAD
< 75 pF (Pin 4)
Room
0.45
0.6
1.0
mA
Bias Current
I
BIAS
Room
10
15
20
mA
Logic
SHUTDOWN Delay
e
t
SD
C
L
= 500 pF, V
SENSE
-V
IN
, See Figure 2
Room
50
100
SHUTDOWN Pulse Width
e
t
SW
See Figure 3
Room
50
RESET Pulse Width
e
t
RW
Room
50
ns
Latching Pulse Width
SHUTDOWN and RESET Low
e
t
LW
See Figure 3
Room
25
Input Low Voltage
V
IL
Room
2.0
V
Input High Voltage
V
IH
Room
8
V
Input Current Input Voltage High
I
IH
V
IN
= 10 V
Room
1
5
mA
Input Current Input Voltage Low
I
IL
V
IN
= 0 V
Room
-35
-25
mA
Output
Output High Voltage
V
OH
I
OUT
= -10 mA
Room
Full
9.7
9.5
V
Output Low Voltage
V
OL
I
OUT
= 10 mA
Room
Full
0.30
0.50
V
Output Resistance
R
OUT
I
OUT
= 10 mA, Source or Sink
Room
Full
20
25
30
50
W
Rise Time
e
t
r
C
L
= 500 pF
Room
40
75
ns
Fall Time
e
t
f
C
L
= 500 pF
Room
40
75
ns
Notes
a.
Refer to PROCESS OPTION FLOWCHART for additional information.
b.
Room = 25_C, Full = as determined by the operating temperature suffix.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
e.
Guaranteed by design, not subject to production test.
f.
C
STRAY
Pin 8 = v 5 pF.
Si9110/9111
Vishay Siliconix
www.vishay.com
4
Document Number: 70004
S-40751--Rev. G, 19-Apr-04
TIMING WAVEFORMS
90%
OUTPUT
SENSE
1.5 V -
50%
0
90%
OUTPUT
0 -
0 -
50%
50%
50%
50%
50%
RESET
0 -
t
d
t
r
v 10 ns
V
CC
V
CC
V
CC
t
SW
t
LW
t
RW
t
f
v 10 ns
V
CC
V
CC
t
SD
SHUTDOWN
SHUTDOWN
t
r
, t
f
v 10 ns
50%
0 -
0 -
FIGURE 1.
FIGURE 2.
FIGURE 3.
TYPICAL CHARACTERISTICS
+V
IN
vs. +I
IN
at Start-Up
Output Switching Frequency vs.
Oscillator Resistance
(V)
140
120
100
80
60
40
20
0
10
15
20
V
CC
= -V
IN
+I
IN
(mA)
+V
IN
(Hz)
1 M
10 k
100 k
10 k
100 k
1 M
r
OSC
(W)
f
OUT
FIGURE 4.
FIGURE 5.
BIAS
FB
+V
IN
COMP
SENSE
RESET
OUTPUT
SHUTDOWN
-V
IN
V
REF
V
CC
DISCHARGE
OSC OUT
OSC IN
Dual-In-Line and SOIC
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Si9110/9111
Vishay Siliconix
Document Number: 70004
S-40751--Rev. G, 19-Apr-04
www.vishay.com
5
PIN CONFIGURATIONS AND ORDERING INFORMATION
ORDERING INFORMATION
Part Number
Temperature Range
Package
Si9110DY
Si9110DY-T1
Si9110DY-T1--E3
SOIC-14
Si9111DY
SOIC-14
Si9111DY-T1
-40 to 85_C
Si9111DY-T1--E3
-40 to 85_C
Si9110DJ
Si9110DJ-T1
PDIP 14
Si9111DJ
PDIP-14
Si9111DJ-T1
DETAILED DESCRIPTION
Pre-Regulator/Start-Up Section
Due to the low quiescent current requirement of the
Si9110/9111 control circuitry, bias power can be supplied from
the unregulated input power source, from an external
regulated low-voltage supply, or from an auxiliary "bootstrap"
winding on the output inductor or transformer.
When power is first applied during start-up, +V
IN
(pin 2) will
draw a constant current. The magnitude of this current is
determined by a high-voltage depletion MOSFET device
which is connected between +V
IN
and V
CC
(pin 6). This
start-up circuitry provides initial power to the IC by charging an
external bypass capacitance connected to the V
CC
pin. The
constant current is disabled when V
CC
exceeds 8.6 V. If V
CC
is
not forced to exceed the 8.6-V threshold, then V
CC
will be
regulated to a nominal value of 8.6 V by the pre-regulator
circuit.
As the supply voltage rises toward the normal operating
conditions, an internal undervoltage (UV) lockout circuit keeps
the output driver disabled until V
CC
exceeds the undervoltage
lockout threshold (typically 8.1 V). This guarantees that the
control logic will be functioning properly and that sufficient
gate drive voltage is available before the MOSFET turns on.
The design of the IC is such that the undervoltage lockout
threshold will be at least 300 mV less than the pre-regulator
turn-off voltage. Power dissipation can be minimized by
providing an external power source to V
CC
such that the
constant current source is always disabled.
Note:
During start-up or when V
CC
drops below 8.6 V the
start-up circuit is capable of sourcing up to 20 mA. This may
lead to a high level of power dissipation in the IC (for a 48-V
input, approximately 1 W). Excessive start-up time caused by
external loading of the V
CC
supply can result in device
damage. Figure 6 gives the typical pre-regulator current at
BiC/DMOS as a function of input voltage.
BIAS
To properly set the bias for the Si9110/9111, a 390-kW resistor
should be tied from BIAS (pin 1) to -V
IN
(pin 5). This
determines the magnitude of bias current in all of the analog
sections and the pull-up current for the SHUDOWN and
RESET pins. The current flowing in the bias resistor is
nominally 15 mA.
Reference Section
The reference section of the Si9110 consists of a temperature
compensated buried zener and trimmable divider network.
The output of the reference section is connected internally to
the non-inverting input of the error amplifier. Nominal reference
output voltage is 4 V. The trimming procedure that is used on
the Si9110 brings the output of the error amplifier (which is
configured for unity gain during trimming) to within "1% of 4 V.
This compensates for input offset voltage in the error amplifier.
The output impedance of the reference section has been
purposely made high so that a low impedance external voltage
source can be used to override the internal voltage source, if
desired, without otherwise altering the performance of the device.