Si9953DY
Vishay Siliconix
Document Number: 70138
S-00652--Rev. K, 27-Mar-00
www.vishay.com
S
FaxBack 408-970-5600
1
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
20
0.25 @ V
GS
= 10 V
"
2.3
20
0.40 @ V
GS
= 4.5 V
"
1.5
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
S
1
G
1
D
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
"
20
V
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
"
2.3
A
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
"
1.8
A
Pulsed Drain Current
I
DM
"
10
A
Continuous Source Current (Diode Conduction)
a
I
S
1.7
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
2.0
W
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
1.3
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
a
R
thJA
62.5
_
C/W
Notes
a.
Surface Mounted on FR4 Board, t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Si9953DY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2
Document Number: 70138
S-00652--Rev. K, 27-Mar-00
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V
2
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 55
_
C
25
m
A
On-State Drain Current
b
I
D(on)
V
DS
v
5 V, V
GS
= 10 V
10
A
On-State Drain Current
b
I
D(on)
V
DS
v
5 V, V
GS
= 4.5 V
1.5
A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 1 A
0.12
0.25
W
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.5 A
0.22
0.40
W
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 2.3 A
2.5
S
Diode Forward Voltage
b
V
SD
I
S
= 1.7 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
a
Total Gate Charge
Q
g
V
10 V V
10 V I
2 3 A
6.7
25
C
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 10 V, I
D
= 2.3 A
1.3
nC
Gate-Drain Charge
Q
gd
1.6
Turn-On Delay Time
t
d(on)
V
10 V R
10
W
10
40
Rise Time
t
r
V
DD
= 10 V, R
L
= 10
W
I
1 A V
10 V R
6
W
12
40
Turn-Off Delay Time
t
d(off)
DD
,
L
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
20
90
ns
Fall Time
t
f
10
50
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/
m
s
70
100
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
Si9953DY
Vishay Siliconix
Document Number: 70138
S-00652--Rev. K, 27-Mar-00
www.vishay.com
S
FaxBack 408-970-5600
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
2
4
6
8
10
0
2
4
6
8
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage
(V)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
V
GS
On-Resistance (
r
DS(on)
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r
DS(on)
)
0
3
6
9
12
15
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
50
25
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
0
100
200
300
400
500
600
700
0
5
10
15
20
0
2
4
6
8
10
0
1
2
3
4
5
6
7
T
C
= 55
_
C
V
GS
= 10 V
C
rss
C
oss
C
iss
V
GS
= 4.5 V
125
_
C
V
DS
=10 V
I
D
= 2.3 A
V
GS
= 10 V
I
D
= 1.0 A
V
GS
= 10 7 V
4 V
5 V
6 V
25
_
C
3 V
Si9953DY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
4
Document Number: 70138
S-00652--Rev. K, 27-Mar-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
On-Resistance (
r
DS(on)
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Source Current (A)
I
S
T
J
Temperature (
_
C)
0.010
0
25
30
5
15
20
0.100
1
30
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
0.4
0.2
0.0
0.2
0.4
0.6
0.8
50
25
0
25
50
75
100
125
150
T
J
= 150
_
C
T
J
= 25
_
C
I
D
= 2.3 A
0.2
0.4
20
0.6
0.8
1.0
1.2
1.4
2
1
0.1
0.01
10
4
10
3
10
2
10
1
1
10
30
Duty Cycle = 0.5
0.2
0.1
0.05
Single Pulse
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 62.5
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
1
V
ariance (V)
V
GS(th)
1.6
10
10
I
D
= 250
A
10
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