SM6T Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88385
www.vishay.com
03-May-02
1
New Product
Surface Mount T
RANS
Z
ORB
Transient Voltage Suppressors
Breakdown Voltage 6.8 to 220V
Peak Pulse Power 600W
Maximum Ratings & Thermal Characteristics
Ratings at 25C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation on
P
PPM
Minimum 600
W
10/1000
s waveform
(1)(2)
(Fig. 1)
Peak pulse current with a 10/1000
s waveform
(1)
I
PPM
See Next Table
A
Power dissipation on infinite heatsink, T
A
= 50C
P
M(AV)
5.0
W
Peak forward surge current 10ms single half sine-wave
I
FSM
100
A
uni-directional only
(2)
Thermal resistance junction to ambient air
(3)
R
JA
100
C/W
Thermal resistance junction to leads
R
JL
20
C/W
Operating junction and storage temperature range
T
J
, T
STG
65 to +150
C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
Dimensions in inches
and (millimeters)
DO-214AA (SMBJ)
Features
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low inductance
Excellent clamping capability
Repetition rate (duty cycle): 0.01%
Fast response time: theoretically (with no parisitic
inductance) less than 1ps from 0 Volts to V
(BR)
for
unidirectional and 5ns for bidirectional types
High temperature soldering: 250C/10 seconds at
terminals
Plastic package has Underwriters Laboratory
Flammability Classificaion 94V-0
Mechanical Data
Case: JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Standard Packaging: 12mm tape (EIA STD RS-481)
Weight: 0.003 ounces, 0.093 grams
Packaging Codes Options (Antistatic):
51 2K per Bulk box, 20K/carton
52 750 per 7" plastic Reel (12mm tape), 15K/carton
5B 3.2K per 13" plastic Reel (12mm tape), 32K/carton
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
SM6T Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88385
2
03-May-02
Electrical Characteristics
Ratings at 25C ambient temperature unless otherwise specified.
Device
Breakdown Voltage
Test
Standoff
Leakage
Clamping Voltage
Clamping Voltage
T
Marking
V
BR
@ I
T
(2)
Current
Voltage
Current
(3)
V
C
@ I
PP
V
C
@ I
PP
Max
Code
I
T
(V)
V
RM
I
RM
@V
RM
10/1000
s
8/20
s
0
-4
/
O
C
Type
(1)
UNI
BI
Min
Max
(mA)
(V)
(
A)
(V)
(A)
(V)
(A)
SM6T6V8A
KE7
KE7
6.45
7.14
10
5.80
1000
10.5
57.0
13.4
298 5.7
SM6T7V5A
KK7
AK7
7.13
7.88
10
6.40
500
11.3
53.0
14.5
276
6.1
SM6T10A
KT7
AT7
9.50
10.5
1.0
8.55
10.0
14.5
41.0
18.6
215
7.3
SM6T12A
KX7
AX7
11.4
12.6
1.0
10.2
5.0
16.7
36.0
21.7
184
7.8
SM6T15A
LG7
LG7
14.3
15.8
1.0
12.8
1.0
21.2
28.0
27.2
147
8.4
SM6T18A
LM7
BM7
17.1
18.9
1.0
15.3
1.0
25.2
24.0
32.5
123
8.8
SM6T22A
LT7
BT7
20.9
23.1
1.0
18.8
1.0
30.6
20.0
39.3
102
9.2
SM6T24A
LV7
LV7
22.8
25.2
1.0
20.5
1.0
33.2
18.0
42.8
93
9.4
SM6T27A
LX7
BX7
25.7
28.4
1.0
23.1
1.0
37.5
16.0
48.3
83
9.6
SM6T30A
ME7
CE7
28.5
31.5
1.0
25.6
1.0
41.5
14.5
53.5
75
9.7
SM6T33A
MG7
MG7
31.4
34.7
1.0
28.2
1.0
45.7
13.1
59.0
68
9.8
SM6T36A
MK7
CK7
34.2
37.8
1.0
30.8
1.0
49.9
12.0
64.3
62
9.9
SM6T39A
MM7
CM7
37.1
41.0
1.0
33.3
1.0
53.9
11.1
69.7
57
10.0
SM6T68A
NG7
NG7
64.6
71.4
1.0
58.1
1.0
92.0
6.50
121
33
10.4
SM6T100A
NV7
NV7
95.0
105
1.0
85.5
1.0
137
4.40
178
22.5
10.6
SM6T150A
PK7
PK7
143
158
1.0
128
1.0
207
2.90
265
15
10.8
SM6T200A
PR7
PR7
190
210
1.0
171
1.0
274
2.20
353
11.3
10.8
SM6T220A
PR8
PR8
209
231
1.0
188
1.0
328
2.00
388
10.3
10.8
Notes: (1) For bi-directional devices add suffix "CA".
(2) V
BR
measured after I
T
applied for 300
s square wave pulse.
(3) For bipolar devices with V
R
=10 Volts or under, the I
T
limit is doubled.
SM6T Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88385
www.vishay.com
03-May-02
3
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
T
A
-- Ambient Temperature (
C)
Fig. 2 Pulse Derating Curve
P
PPM
--
Peak Pulse Power (kW)
Fig. 1 Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
s
1.0
s
10
s
t
d
-- Pulse Width (sec.)
100
s
1.0ms
10ms
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
Fig. 6 Maximum Non-Repetitive Peak
Forward Surge Current
Number of Cycles at 60H
Z
10
200
100
1
10
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
I
FSM
--
Peak Forward Surge Current (A)
t
p
-- Pulse Duration (sec)
T
ransient
Thermal Impedance (
C/W)
Fig. 5 Typical Transient Thermal
Impedance
0.1
1.0
10
100
0.001
0.01
0.1
1
10
100
1000
0
50
100
150
I
PPM
--
Peak Pulse Current, % I
RSM
Fig. 3 Pulse Waveform
T
J
= 25
C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
tr = 10
sec.
Peak Value
I
PPM
Half Value -- IPP
I
PPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t -- Time (ms)
C
J
--
Junction Capacitance (pF)
Fig. 4 Typical Junction Capacitance
10
100
1,000
6,000
10
1
100
200
V
WM
-- Reverse Stand-Off Voltage (V)
T
J
= 25
C
f = 1.0MHz
Vsig = 50mVp-p
V
R
,
Measured at
Stand-Off
Voltage, V
WM
Measured at
Zero Bias
Uni-Directional
Bi-Directional
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