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Электронный компонент: SMF12A

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SMF5V0A to SMF51A
Document Number 85811
Rev. 2.0, 29-Apr-05
Vishay Semiconductors
www.vishay.com
1
17249
Surface Mount ESD Protection Diodes
Features
For surface mounted applications
Low-profile package
Optimized for LAN protection applications
Ideal for ESD protection of data lines in
accordance with IEC 61000-4-2 (IEC801-2)
Ideal for EFT protection of data lines in
accordance with IEC 61000-4-4 (IEC801-4)
IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)
Low incremental surge resistance, excellent
clamping capability
200 W peak pulse power capability with a
10/1000
s waveform, repetition rate
(duty cycle): 0.01 %
Very fast response time
High temperature soldering guaranteed:
260 C/ 10 seconds at terminals
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: JEDEC DO-219AB (SMF
) Plastic case
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity:The band denotes the cathode, which is
positive with respect to the anode under normal
TVS operation
Mounting Position: Any
Weight: approx. 15 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel (8 mm tape), 30 k/box
Absolute Maximum Ratings
Ratings at 25 C, ambient temperature unless otherwise specified
1)
Non-repetitive current pulse and derated above T
A
= 25 C
Thermal Characteristics
Ratings at 25 C, ambient temperature unless otherwise specified
2) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (
40 m thick)
Parameter
Test condition
Symbol
Value
Unit
Peak pulse power dissipation
10/1000
s waveform
1)
P
PPM
200
W
8/20
s waveform
1)
P
PPM
1000
W
Peak pulse current
10/1000
s waveform
1)
I
PPM
next
Table
A
Peak forward surge current
8.3 ms single half sine-wave
I
FSM
20
A
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance
2)
R
thJA
180
K/W
Operation junction and storage
temperature range
T
stg
, T
J
- 55 to + 150
C
e3
www.vishay.com
2
Document Number 85811
Rev. 2.0, 29-Apr-05
SMF5V0A to SMF51A
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified. V
F
= 3.5 V at I
F
= 12 A (uni-directional only)
1)
Pulse test t
p
5.0 ms
2)
Surge current waveform 10/1000
s
3)
All terms and symbols are consistent with ANSI/IEEE C62.35
Partnumber
Marking
Code
UNI
Breakdown
Voltage
1)
Test Current
Stand-off
Voltage
Maximum
Reverse
Leakage
Maximum
Peak Pulse
Surge
Current
2,3)
Maximum
Clamping
Voltage
Junction
Capacitance
V
(BR)
@ I
T
V
WM
@ V
WM
I
D
I
PPM
@ I
PPM
V
C
C
j
@
V
R
= 0 V,
f = 1 MHz
V
mA
V
A
A
V
pF
min
typ
SMF5V0A
AE
6.40
10
5.0
400
21.7
9.2
1030
SMF6V0A
AG
6.67
10
6.0
400
19.4
10.3
1010
SMF6V5A
AK
7.22
10
6.5
250
17.9
11.2
850
SMF7V0A
AM
7.78
10
7.0
100
16.7
12.0
750
SMF7V5A
AP
8.33
1.0
7.5
50
15.5
12.9
730
SMF8V0A
AR
8.89
1.0
8.0
25
14.7
13.6
670
SMF8V5A
AT
9.44
1.0
8.5
10
13.9
14.4
660
SMF9V0A
AV
10.0
1.0
9.0
5.0
13.5
15.4
620
SMF10A
AX
11.1
1.0
10
2.5
11.8
17.0
570
SMF11A
AZ
12.2
1.0
11
2.5
11.0
18.2
460
SMF12A
BE
13.3
1.0
12
2.5
10.1
19.9
440
SMF13A
BG
14.4
1.0
13
1.0
9.3
21.5
420
SMF14A
BK
15.6
1.0
14
1.0
8.6
23.2
370
SMF15A
BM
16.7
1.0
15
1.0
8.2
24.4
350
SMF16A
BP
17.8
1.0
16
1.0
7.7
26.0
340
SMF17A
BR
18.9
1.0
17
1.0
7.2
27.6
310
SMF18A
BT
20.0
1.0
18
1.0
5.8
29.2
305
SMF20A
BV
22.2
1.0
20
1.0
6.2
32.4
207
SMF22A
BX
24.4
1.0
22
1.0
5.6
35.5
265
SMF24A
BZ
26.7
1.0
24
1.0
5.1
38.9
240
SMF26A
CE
28.9
1.0
26
1.0
4.8
42.1
225
SMF28A
CG
31.1
1.0
28
1.0
4.4
45.4
210
SMF30A
CK
33.3
1.0
30
1.0
4.1
48.4
205
SMF33A
CM
36.7
1.0
33
1.0
3.8
53.3
190
SMF36A
CP
40.0
1.0
36
1.0
3.4
58.1
180
SMF40A
CR
44.4
1.0
40
1.0
3.1
64.5
165
SMF43A
CT
47.8
1.0
43
1.0
2.9
69.4
160
SMF45A
CV
50.0
1.0
45
1.0
2.8
72.7
155
SMF48A
CX
53.3
1.0
48
1.0
2.6
77.4
150
SMF51A
CZ
56.7
1.0
51
1.0
2.4
82.4
145
SMF5V0A to SMF51A
Document Number 85811
Rev. 2.0, 29-Apr-05
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25
C unless otherwise specified)
Figure 1. Peak Pulse Power Rating
Figure 2. Pulse Derating Curve
Figure 3. Pulse Waveform
P
PPM
-
Peak
Pulse
Power
(kW)
0.1
1
10
0.1
s
1.0
s
10
s
t
d
- Pulse Width (sec.)
100
s
1.0ms
10ms
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25 C
17250
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak
Pulse
Power
(P
PP
)
o
r
C
urrent
(I
PPM
)
Derating
i
n
Percentage,
%
T
A
- Ambient Temperature (C)
17251
0
50
100
150
I
PPM
-
Peak
Pulse
C
urrent,
%
I
RSM
T
J
= 25 C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
tr = 10
s
Peak Value
I
PPM
Half Value - IPP
I
PPM
2
td
10/1000 sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t - Time (ms)
17252
www.vishay.com
4
Document Number 85811
Rev. 2.0, 29-Apr-05
SMF5V0A to SMF51A
Vishay Semiconductors
Package Dimensions in mm (Inches)
Top View
5
5
Z
Cathode Band
Detail
Z
enlarged
0.10 max
17247
0.85 (0.033)
0.35 (0.014)
3.9 (0.152)
3.5 (0.137)
0.99 (0.039)
0.97 (0.038)
0.16 (0.006)
1.9 (0.074)
1.7 (0.066)
1.2 (0.047)
0.8 (0.031)
2.9 (0.113)
2.7 (0.105)
ISO Method E
1.6 (0.062)
1.3 (0.051)
1.4 (0.055)
Mounting Pad Layout
SMF5V0A to SMF51A
Document Number 85811
Rev. 2.0, 29-Apr-05
Vishay Semiconductors
www.vishay.com
5
Blistertape for SMF
18513
PS