SUD06N10-225L
Vishay Siliconix
New Product
Document Number: 71253
S01584--Rev. A, 17-Jul-00
www.vishay.com
S
FaxBack 408-970-5600
1
N-Channel 100-V (D-S) 175
_
C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
100
0.200 @ V
GS
= 10 V
6.5
100
0.225 @ V
GS
= 4.5 V
6.0
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Order Number:
SUD06N10-225L
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
"
20
V
Continuous Drain Current (T
J
= 175
_
C)
b
T
C
= 25
_
C
I
D
6.5
A
Continuous Drain Current (T
J
= 175
_
C)
b
T
C
= 125
_
C
I
D
3.75
A
Pulsed Drain Current
I
DM
8.0
A
Continuous Source Current (Diode Conduction)
I
S
6.5
Avalanche Current
I
AR
5.0
Repetitive Avalanche Energy (Duty Cycle
v
1%)
L = 0.1 mH
E
AR
1.25
mJ
Maximum Power Dissipation
T
C
= 25
_
C
P
D
20
b
W
Maximum Power Dissipation
T
A
= 25
_
C
P
D
1.5a
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient
a
t
v
10 sec
R
thJA
40
50
_
C/W
Junction-to-Ambient
a
Steady State
R
thJA
80
100
_
C/W
Junction-to-Case
R
thJC
6.0
7.5
Notes
a.
Surface Mounted on 1" x1" FR4 Board.
b.
See SOA curve for voltage derating.
SUD06N10-225L
Vishay Siliconix
New Product
www.vishay.com
S
FaxBack 408-970-5600
2
Document Number: 71253
S01584--Rev. A, 17-Jul-00
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
m
A
100
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
1.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
Z
G
V l
D i C
I
V
DS
= 80 V, V
GS
= 0 V
1
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125
_
C
50
m
A
V
DS
= 80 V, V
GS
= 0 V, T
J
= 175
_
C
250
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
8.0
A
D i S
O S
R
i
b
V
GS
= 10 V, I
D
= 3 A
0.160
0.200
W
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 3 A, T
J
= 125
_
C
0.350
W
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 3 A, T
J
= 175
_
C
0.450
W
V
GS
= 4.5 V, I
D
= 1.0 A
0.180
0.225
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 3 A
8.5
S
Dynamic
a
Input Capacitance
C
iss
V
0 V V
25 V F
1 MH
240
F
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
42
pF
Reverse Transfer Capacitance
C
rss
17
Total Gate Charge
c
Q
g
V
50 V V
5 V I
6 5 A
2.7
4.0
C
Gate-Source Charge
c
Q
gs
V
DS
= 50 V,
V
GS
= 5 V, I
D
= 6.5 A
0.6
nC
Gate-Drain Charge
c
Q
gd
0.7
Turn-On Delay Time
c
t
d(on)
V
50 V R
7 5
W
7
11
Rise Time
c
t
r
V
DD
= 50 V, R
L
= 7.5
W
I
6 5 A V
10 V R
2 5
W
8
12
ns
Turn-Off Delay Time
c
t
d(off)
DD
,
L
I
D
^
6.5 A, V
GEN
= 10 V, R
G
= 2.5
W
8
12
ns
Fall Time
c
t
f
9
14
Source-Drain Diode Ratings and Characteristic (T
C
= 25
_
C)
Pulsed Current
I
SM
8.0
A
Diode Forward Voltage
b
V
SD
I
F
= 6.5 A, V
GS
= 0 V
0.9
1.3
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 6.5 A, di/dt = 100 A/
m
s
35
60
ns
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
c.
Independent of operating temperature.
SUD06N10-225L
Vishay Siliconix
New Product
Document Number: 71253
S01584--Rev. A, 17-Jul-00
www.vishay.com
S
FaxBack 408-970-5600
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
3
6
9
12
15
0
3
6
9
12
15
0
50
100
150
200
250
300
350
0
20
40
60
80
100
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage
(V)
On-Resistance (
Q
g
Total Gate Charge (nC)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
r DS(on)
W
)
V
GS
T
ransconductance
(S)
g
fs
0
3
6
9
12
15
0
2
4
6
8
10
0
2
4
6
8
10
0
1
2
3
4
5
0
0.05
0.10
0.15
0.20
0.25
0.30
0
3
6
9
12
15
0
3
6
9
12
15
0
1
2
3
4
5
125
_
C
3, 2 V
T
C
= 55
_
C
V
DS
= 50 V
I
D
= 6.5 A
V
GS
= 10 thru 5 V
4 V
V
GS
= 10 V
V
GS
= 4.5 V
T
C
= 55
_
C
25
_
C
125
_
C
C
oss
C
iss
I
D
Drain Current (A)
25
_
C
C
rss
SUD06N10-225L
Vishay Siliconix
New Product
www.vishay.com
S
FaxBack 408-970-5600
4
Document Number: 71253
S01584--Rev. A, 17-Jul-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
0.5
1.0
1.5
2.0
2.5
50
25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
(Normalized)
On-Resistance (
T
J
Junction Temperature (
_
C)
V
SD
Source-to-Drain Voltage (V)
r DS(on)
W
)
Source Current (A)
I
S
10
1
0.2
0.6
0.8
1.2
V
GS
= 10 V
I
D
= 3 A
T
J
= 25
_
C
0
0.4
1.0
T
J
= 175
_
C
THERMAL RATINGS
Normalized Ef
fective
T
ransient
Thermal Impedance
Safe Operating Area
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
ID
0.1
0.1
1
10
100
1
10
T
C
= 25
_
C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
5
10
3
10
2
10
1
1
10
Maximum Avalanche Drain Current
vs. Case Temperature
T
C
Case Temperature (
_
C)
Drain Current (A)
ID
0
2
4
6
8
0
25
50
75
100
125
150
175
0.2
0.1
Duty Cycle = 0.5
10 ms
100 ms
1 s, dc
100
100
m
s
10
m
s
1 ms
0.05
0.02
Single Pulse
Limited by r
DS(on)
10
4
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