FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% R
g
Tested
APPLICATIONS
D High-Side Synchronous Buck DC/DC
Conversion
- Desktop
- Server
SUD50N02-09P
Vishay Siliconix
Document Number: 72034
S-41168--Rev. C, 14-Jun-04
www.vishay.com
1
N-Channel 20-V (D-S) 175
_
C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
a
20
0.0095 @ V
GS
= 10 V
20
20
0.017 @ V
GS
= 4.5 V
15
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Ordering Information: SUD50N02-09P
SUD50N02-09P--E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
"20
V
Continuous Drain Current
a
T
A
= 25_C
I
D
20
Continuous Drain Current
a
T
C
= 100_C
I
D
14
Pulsed Drain Current
I
DM
100
A
Continuous Source Current (Diode Conduction)
a
I
S
4.3
Avalanche Current
L = 0 1 mH
I
AS
29
Single Pulse Avalanche Energy
L = 0.1 mH
E
AS
42
mJ
Maximum Power Dissipation
T
A
= 25_C
P
D
6.5
a
W
Maximum Power Dissipation
T
C
= 25_C
P
D
39.5
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
a
t v 10 sec
R
19
23
Maximum Junction-to-Ambient
a
Steady State
R
thJA
40
50
_C/W
Maximum Junction-to-Case
R
thJC
3.1
3.8
C/W
Notes
a.
Surface Mounted on FR4 Board, t v 10 sec.
b.
Limited by package
SUD50N02-09P
Vishay Siliconix
www.vishay.com
2
Document Number: 72034
S-41168--Rev. C, 14-Jun-04
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
20
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
0.8
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V, T
J
= 125_C
50
mA
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50
A
V
GS
= 10 V, I
D
= 20 A
0.008
0.0095
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
0.014
W
Drain Source On State Resistance
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
0.0135
0.017
W
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
15
S
Dynamic
a
Input Capacitance
C
iss
1300
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 10 V, f = 1 MHz
470
pF
Reverse Transfer Capacitance
C
rss
275
p
Total Gate Charge
c
Q
g
10.5
16
Gate-Source Charge
c
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 50 A
4.2
nC
Gate-Drain Charge
c
Q
gd
V
DS
10 V,
V
GS
4.5 V, I
D
50 A
4.0
nC
Gate Resistance
R
g
1.6
4.0
6
W
Turn-On Delay Time
c
t
d(on)
8
12
Rise Time
c
t
r
V
DD
= 10 V, R
L
= 0.2 W
10
15
ns
Turn-Off Delay Time
c
t
d(off)
V
DD
= 10 V, R
L
= 0.2 W
I
D
^ 50 A, V
GEN
= 10 V, R
g
= 2.5 W
25
40
ns
Fall Time
c
t
f
g
12
20
Source-Drain Diode Ratings and Characteristic (T
C
= 25
_
C)
Pulsed Current
I
SM
100
A
Diode Forward Voltage
b
V
SD
I
F
= 50 A, V
GS
= 0 V
1.2
1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
35
70
ns
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width v
300 ms, duty cycle v
2%.
c.
Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
20
40
60
80
100
0
2
4
6
8
10
0
20
40
60
80
100
0
1
2
3
4
5
6
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I D
25_C
125_C
T
C
= -55_C
V
GS
= 10 thru 6 V
3 V
4 V
5 V
SUD50N02-09P
Vishay Siliconix
Document Number: 72034
S-41168--Rev. C, 14-Jun-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0
20
40
60
80
100
0
2
4
6
8
10
0
4
8
12
16
20
0
10
20
30
40
50
60
0
10
20
30
40
50
0
400
800
1200
1600
2000
0
4
8
12
16
20
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
-
On-Resistance (
Q
g
- Total Gate Charge (nC)
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
r DS(on)
W
)
V
GS
-
T
ransconductance
(S)
g
fs
V
DS
= 10 V
I
D
= 50 A
V
GS
= 10 V
V
GS
= 4.5 V
C
rss
T
C
= -55_C
25_C
125_C
C
iss
I
D
- Drain Current (A)
C
oss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25
0
25
50
75
100 125 150 175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I S
100
1
0.3
0.6
0.9
1.2
1.5
V
GS
= 10 V
I
D
= 30 A
T
J
= 25_C
T
J
= 150_C
0
10
r
DS
(
on)
-
On-Resiistance
(Normalized)
SUD50N02-09P
Vishay Siliconix
www.vishay.com
4
Document Number: 72034
S-41168--Rev. C, 14-Jun-04
THERMAL RATINGS
0
5
10
15
20
25
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
ID
1000
10
0.01
0.1
1
10
100
1
100
T
A
= 25_C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Normalized Ef
fective
T
ransient
Thermal Impedance
Maximum Drain Current vs.
Ambiemt Temperature
T
A
- Ambient Temperature (_C)
-
Drain Current (A)
ID
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1 ms
10 ms
100 ms
dc
10, 100 ms
1 s
1000
100
0.1
10 s
100 s
Limited
by r
DS(on)
PDF 
ZIP