TCST1230
Vishay
Semiconductors
1 (7)
www.vishay.com
Document Number 83765
Rev. A4, 08Jun99
Transmissive Optical Sensor with Phototransistor
Output
Description
This device has a compact construction where the
emittig-light sources and the detectors are located
face-to-face on the same optical axis. The operating
wavelength is 950 nm. The detector consists of a
phototransistor.
Applications
D
Position sensor for shaft encoder
D
Detection of opaque material such as paper,
IBM cards, magnetic tapes etc.
D
Limit switch for mechanical motions in VCR
D
Read/ write head position in data storage
equipment
D
General purpose wherever the space is limited
Features
D
Gap 3 mm
D
Package height: 6 mm
D
Aperture 0.5 mm
D
Plastic polycarbonate housing
D
Current Transfer Ratio (CTR) of typical 5%
15130
96 11969
A
E
C
C
Top view
Order Instruction
Ordering Code
Resolution (mm) / Aperture (mm)
Remarks
TCST1230
0.4 / 0.5
High density packing
TCST1230
Vishay
Semiconductors
www.vishay.com
2 (7)
Rev. A4, 08Jun99
Document Number 83765
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V
R
6
V
Forward current
I
F
60
mA
Forward surge current
t
p
10
m
A
I
FSM
3
A
Power dissipation
T
amb
25
C
P
V
100
mW
Junction temperature
T
j
100
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V
CEO
70
V
Emitter collector voltage
V
ECO
7
V
Collector current
I
C
100
mA
Power dissipation
T
amb
25
C
P
V
150
mW
Junction temperature
T
j
100
C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
Total power dissipation
T
amb
25
C
P
tot
250
mW
Operation temperature range
T
amb
25 to +85
C
Storage temperature range
T
stg
40 to +100
C
Soldering temperature
1.6 mm from case, t
5 s
T
sd
260
C
Electrical Characteristics
(T
amb
= 25
C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I
F
= 60 mA
V
F
1.25
1.5
V
Junction capacitance
V
R
= 0, f = 1 MHz
C
j
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emittter voltage
I
C
= 1 mA
V
CEO
70
V
Emitter collector voltage
I
E
= 10
m
A
V
ECO
7
V
Collector dark current
V
CE
= 25 V, I
F
= 0, E = 0
I
CEO
10
100
nA
Coupler
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector current
V
CE
= 10 V, I
F
= 20 mA
I
C
0.5
14
mA
Collector emitter
saturation voltage
I
F
= 20 mA, I
C
= 0.2 mA
V
CEsat
0.4
V
TCST1230
Vishay
Semiconductors
3 (7)
www.vishay.com
Document Number 83765
Rev. A4, 08Jun99
Switching Characteristics
Parameter
Test Conditions
Symbol
Typ.
Unit
Turn-on time
I
C
= 1 mA, V
CE
= 5 V, R
L
= 100
W
(see figure 1)
t
on
15.0
m
s
Turn-off time
C
CE
L
(
g
)
t
off
10.0
m
s
Channel I
Channel II
95 10890
+ 5 V
I
C
= 2 mA; adjusted through
input amplitude
I
F
0
I
F
R
G
= 50
W
t
p
t
p
= 50
m
s
T
= 0.01
Oscilloscope
R
L
y
1 M
W
C
L
x
20 pF
50
W
100
W
Figure 1. Test circuit
t
p
t
t
0
0
10%
90%
100%
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
96 11698
t
p
pulse duration
t
d
delay time
t
r
rise time
t
on
(= t
d
+ t
r
)
turn-on time
t
s
storage time
t
f
fall time
t
off
(= t
s
+ t
f
)
turn-off time
Figure 2. Switching times
TCST1230
Vishay
Semiconductors
www.vishay.com
4 (7)
Rev. A4, 08Jun99
Document Number 83765
Typical Characteristics
(T
amb
= 25
_
C, unless otherwise specified)
0
30
60
90
120
0
100
200
300
400
150
95 11088
P
T
otal Power Dissipation ( mW
)
tot
T
amb
Ambient Temperature (
C )
Coupled device
Phototransistor
IR-diode
Figure 3. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
Forward Voltage ( V )
96 11862
F
I Forward Current ( mA
)
Figure 4. Forward Current vs. Forward Voltage
25
0
25
50
0
0.5
1.0
1.5
2.0
CTR Relative Current
T
ransfer
Ratio
rel
T
amb
Ambient Temperature (
C )
100
95 11089
75
V
CE
=5V
I
F
=20mA
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
0
25
50
75
1
10
100
1000
10000
I Collector Dark Current,
CEO
T
amb
Ambient Temperature (
C )
100
95 11090
with open Base ( nA
)
V
CE
=25V
I
F
=0
Figure 6. Collector Dark Current vs. Ambient Temperature
0.1
1
10
0.001
0.01
0.1
10
I Collector Current ( mA
)
C
I
F
Forward Current ( mA )
100
95 11083
1
V
CE
=5V
Figure 7. Collector Current vs. Forward Current
0.1
1
10
0.01
0.1
1
10
V
CE
Collector Emitter Voltage ( V )
100
95 11084
I Collector Current ( mA
)
C
5mA
2mA
I
F
=50mA
20mA
10mA
Figure 8. Collector Current vs. Collector Emitter Voltage
TCST1230
Vishay
Semiconductors
5 (7)
www.vishay.com
Document Number 83765
Rev. A4, 08Jun99
0.1
1
10
0.1
1
10
100
CTR Current
T
ransfer Ratio ( % )
I
F
Forward Current ( mA )
100
95 11085
V
CE
=5V
Figure 9. Current Transfer Ratio vs. Forward Current
0
2
4
6
I
C
Collector Current ( mA )
10
95 11086
t / t
T
urn on /
T
urn
of
f
T
ime ( s )
of
f
m
on
Non Saturated
Operation
V
S
=5V
R
L
=100
W
t
on
0
5
10
15
20
8
t
off
Figure 10. Turn on / off Time vs. Collector Current
0
10
20
30
40
50
60
70
80
90
100
110
0.5 0.4 0.3 0.2 0.1 0.0 0.1 0.2 0.3 0.4 0.5
s Displacement ( mm )
96 12006
I Relative Collector Current
Crel
0
s
A=0.5mm
Figure 11. Relative Collector Current vs. Displacement
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