TN0601L, VN0606L, VN66AFD
Vishay Siliconix
Document Number: 70201
S-04279--Rev. E, 16-Jul-01
www.vishay.com
11-1
N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max (
W
)
V
GS(th)
(V)
I
D
(A)
TN0601L
1.8 @ V
GS
= 10 V
0.5 to 2
0.47
VN0606L
60
3 @ V
GS
= 10 V
0.8 to 2
0.33
VN66AFD
3 @ V
GS
= 10 V
0.8 to 2.5
1.46
FEATURES
BENEFITS
APPLICATIONS
D
Low On-Resistance: 1.2
W
D
Low Threshold: <1.6 V
D
Low Input Capacitance: 35 pF
D
Fast Switching Speed: 9 ns
D
Low Input and Output Leakage
D
Low Offset Voltage
D
Low-Voltage Operation
D
Easily Driven Without Buffer
D
High-Speed Circuits
D
Low Error Voltage
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
Top View
TO-226AA
(TO-92)
S
D
G
1
2
3
TO-220SD
(Tab Drain)
Top View
TN0601L
VN0606L
VN66AFD
1
S
D
G
2
3
"S" TN
0601L
xxyy
Device Marking
Front View
"S" VN
0606L
xxyy
"S" = Siliconix Logo
xxyy = Date Code
Device Marking
Front View
VN66AFD
"S" xxyy
"S" = Siliconix Logo
xxyy = Date Code
VN0606L
TN0601L
VN66AFD
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN0601L
VN0606L
VN66AFD
b
Unit
Drain-Source Voltage
V
DS
60
60
60
Gate-Source Voltage
V
GS
"
20
"
30
"
30
V
Continuous Drain Current
T
A
= 25
_
C
0.47
0.33
1.46
Continuous Drain Current
(T
J
= 150
_
C)
T
A
= 100
_
C
I
D
0.29
0.21
0.92
A
Pulsed Drain Current
a
I
DM
1.5
1.6
3
T
A
= 25
_
C
0.8
0.8
15
Power Dissipation
T
A
= 100
_
C
P
D
0.32
0.32
6
W
Thermal Resistance, Junction-to-Ambient
R
thJA
156
156
_
Thermal Resistance, Junction-to-Case
R
thJC
8.3
_
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
Notes
a.
Pulse width limited by maximum junction temperature.
b.
Reference case for all temperature testing.
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70201
S-04279--Rev. E, 16-Jul-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
TN0601L
VN0606L
VN66AFD
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10
m
A
70
60
60
60
V
DS
= V
GS
, I
D
= 0.25 mA
1.6
0.5
2
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.7
0.8
2
0.8
2.5
V
DS
= 0 V, V
GS
=
"
30 V
"
100
"
100
Gate-Body Leakage
I
GSS
T
C
= 125
_
C
"
500
nA
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
10
V
DS
= 60 V, V
GS
= 0 V
10
T
J
= 125
_
C
500
Zero Gate VoltageDrain Current
I
DSS
V
DS
= 48 V, V
GS
= 0 V
1
1
m
A
DSS
T
J
= 125
_
C
100
m
T
C
= 125
_
C
10
V
DS
= 10 V, V
GS
= 4.5 V
0.5
0.25
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
2.4
1
1.5
1.5
A
V
GS
= 3.5 V, I
D
= 0.04 A
4
5
V
GS
= 4.5 V, I
D
= 0.25 A
2
3
T
J
= 125
_
C
3.8
6
V
GS
= 5 V, I
D
= 0.3 A
2.3
5
W
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 0.5 A
1.2
3
W
T
J
= 125
_
C
2.3
6
V
GS
= 10 V, I
D
= 1 A
1.3
1.8
3
T
C
= 125
_
C
2.5
6
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
350
200
170
170
Common Source Output Conductance
b
g
os
V
DS
= 10 V, I
D
= 0.1 A
0.3
mS
Dynamic
Input Capacitance
C
iss
35
60
50
50
Output Capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
25
50
40
40
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
6
10
10
10
Switching
c
Turn-On Time
t
ON
V
DD
= 25 V, R
L
= 23
W
^
8
15
10
15
Turn-Off Time
t
OFF
I
D
^
1 A, V
GEN
= 10 V
R
G
= 25
W
9
15
10
15
ns
Notes
a.
For DESIGN AID ONLY, not subject to production testing..
VNDQ06
b.
Pulse test: PW
v
300
m
s duty cycle
v
2%.
c.
Switching time is essentially independent of operating temperature.
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
Document Number: 70201
S-04279--Rev. E, 16-Jul-01
www.vishay.com
11-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
I
D
Drain Current (A)
T
J
Junction Temperature (
_
C)
2.0 V
100
0
0.4
0.8
1.2
1.6
2.0
80
60
40
20
0
2.8 V
2.6 V
2.4 V
2.2 V
1.8 V
V
GS
= 10 V
2.0
0
1
2
3
4
5
1.6
1.2
0.8
0.4
0
V
GS
= 10 V
8 V
7 V
6 V
5 V
4 V
3 V
1.0
0.8
0.6
0
0
2
10
0.4
0.2
4
6
8
125
_
C
V
DS
= 15 V
T
J
= 55
_
C
2.8
0
4
8
12
16
20
2.4
2.0
1.6
0
1.2
0.8
0.4
1.0 A
I
D
= 0.1 A
2.5
2.0
1.5
0
0
0.4
2.0
1.0
0.5
0.8
1.2
1.6
V
GS
= 10 V
2.25
2.00
1.75
0.50
50
10
150
1.50
1.25
30
70
110
1.00
0.75
V
GS
= 10 V
I
D
= 1.0 A
0.2 A
0.5 A
25
_
C
I
D
Drain Current (A)
I
D
Drain Current (mA)
I
D
Drain Current (A)
r
DS
(
on)
On-Resistance (
)
r
DS
(
on)
Drain-Source On-Resistance (
)
r
DS
(
on)
Drain-Source On-Resistance (
)
(
Normalized)
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
www.vishay.com
11-4
Document Number: 70201
S-04279--Rev. E, 16-Jul-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Threshold Region
Capacitance
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Gate Charge
Load Condition Effects on Switching
Normalized Ef
fective
T
ransient
Thermal Impedance
t
1
Square Wave Pulse Duration (sec)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Q
g
Total Gate Charge (pC)
10
1
0.01
0.5
0.1
1.0
1.5
2.0
V
DS
= 5 V
55
_
C
125
_
C
T
J
= 150
_
C
C
oss
120
100
80
0
0
10
50
60
40
20
30
40
20
C rss
V
GS
= 0 V
f = 1 MHz
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
0.1
5 K
1
100
500
10
0.5
5
50
1 K
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
15.0
12.5
10.0
0
0
100
600
7.5
5.0
200
300
400
2.5
500
I
D
= 1.0 A
V
DS
= 30 V
0.1
1
10
100
10
1
50
20
5
2
V
DD
= 25 V
R
G
= 25
W
V
GS
= 0 to 10 V
t
d(off)
t
r
t
d(on)
t
f
25
_
C
C
iss
Single Pulse
0.01
I
D
Drain Current (mA)
C
Capacitance (pF)
V
GS
Gate-to-Source V
oltage (V)
t
Switching T
ime (ns)
V
DS
= 48 V
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