TSDF02424X/TSDF02424XR
Vishay Semiconductors
1 (4)
www.vishay.com
Document Number 85088
Rev. 1, 12Nov01
Dual - MOSMIC
two AGC Amplifiers for TVTuner
Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in
UHF-and VHF- tuner with 5 V supply voltage.
Typical Application
AMP1
AMP2
G1
1
G1
6
AGC
RF in
RF in
C
C
D 3
G2 (common)
2 (TSDF02424X)
5 (TSDF02424XR)
S (common)
C
RFC
RF out
+5 V
D 4
C
RFC
RF out
16601
+5 V
C
5 (TSDF02424X)
2 (TSDF02424XR)
RG1
RG1
+5 V
+5 V
Features
D
Two AGC amplifiers in a single package
D
Easy Gate 1 switch-off with PNP switching
transistors inside PLL
D
Integrated gate protection diodes
D
Low noise figure
D
High gain, medium forward transadmittance
(24 mS typ.)
D
Biasing network on chip
D
Improved cross modulation at gain reduction
D
High AGC-range with less steep slope
D
SMD package, reverse pinning possible
TY
CW
WC5
1
2
3
6
5
4
16602
TSDF02424X Marking: WC5
Plastic case (SOT 363)
1 = Gate 1 (amplifier 1), 2 = Gate 2,
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),
5 = Source, 6 = Gate1 (amplifier 2)
TY
CW
W5C
1
2
3
6
5
4
16603
TSDF02424XR Marking: W5C
Plastic case (SOT 363)
1 = Gate 1 (amplifier 1), 2 = Source,
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),
5 = Gate 2, 6 = Gate1 (amplifier 2)
T = Telefunken
Y = Year, is variable for digit from 0 to 9 (e.g. 0 = 2000, 1 = 2001)
CW = Calendar Week, is variable for number from 01 to 52
Number of Calendar Week is always indicating place of pin 1
TSDF02424X/TSDF02424XR
Vishay Semiconductors
www.vishay.com
2 (4)
Rev. 1, 12Nov01
Document Number 85088
All of following data and characteristics are valid for operating either
amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)
Absolute Maximum Ratings
T
amb
= 25
C,
unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Drain - source voltage
V
DS
8
V
Drain current
I
D
25
mA
Gate 1/Gate 2 - source peak current
I
G1/G2SM
10
mA
Gate 1/Gate 2 - source voltage
+V
G1
/
V
G2SM
6
V
Gate 1/Gate 2 - source voltage
-V
G1SM
1.5
V
Total power dissipation
T
amb
60
C
P
tot
200
mW
Channel temperature
T
Ch
150
C
Storage temperature range
T
stg
55 to +150
C
Maximum Thermal Resistance
T
amb
= 25
C,
unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m Cu
R
thChA
450
K/W
Electrical DC Characteristics
T
amb
= 25
C,
unless otherwise specified
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Drain - source
breakdown voltage
I
D
= 10
A, V
G1S
= V
G2S
= 0
V
(BR)DSS
12
V
Gate 1 - source
breakdown voltage
+I
G1S
= 10 mA, V
G2S
= V
DS
= 0
+V
(BR)G1SS
7
10
V
Gate 2 - source
breakdown voltage
I
G2S
= 10 mA, V
G2S
= V
DS
= 0
V
(BR)G2SS
7
10
V
Gate 1 - source
leakage current
+V
G1S
= 5 V, V
G2S
= V
DS
= 0
+I
G1SS
20
nA
Gate 2 - source
leakage current
V
G2S
= 5 V, V
G1S
= V
DS
= 0
I
G2SS
20
nA
Drain - source
operating current
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 56 k
W
I
DSO
8
13
18
mA
Gate 1 - source
cut-off voltage
V
DS
= 5 V, V
G2S
= 4, I
D
= 20
A
V
G1S(OFF)
0.5
1.3
V
Gate 2 - source
cut-off voltage
V
DS
= V
RG1
= 5 V, R
G1
= 56 k
W
, I
D
= 20
A
V
G2S(OFF)
0.8
1.0
1.4
V
Remark on improving intermodulation behavior:
By setting R
G1
smaller than 56 k
W
, typical value of I
DSO
will raise and improved intermodulation behavior
will be performed.
TSDF02424X/TSDF02424XR
Vishay Semiconductors
3 (4)
www.vishay.com
Document Number 85088
Rev. 1, 12Nov01
Electrical AC Characteristics
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 56 k
W
, I
D
= I
DSO,
f = 1 MHz, T
amb
= 25
C,
unless otherwise specified
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward transadmittance
y
21s
20
24
28
mS
Gate 1 input capacitance
C
issg1
1.7
2.1
pF
Feedback capacitance
C
rss
15
30
fF
Output capacitance
C
oss
0.9
pF
Power gain
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
ps
26
dB
Power gain
G
S
= 3.3 mS, G
L
= 1 mS, f = 800 MHz
G
ps
16.5
21
dB
AGC range
V
DS
= 5 V, V
G2S
= 1 to 4 V, f = 800 MHz
G
ps
45
dB
Noise figure
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
F
1
dB
Noise figure
G
S
= 3.3 mS, G
L
= 1 mS, f = 800 MHz
F
1.3
dB
Cross modulation
Input level for k = 1 % @ 0 dB AGC
f
w
= 50 MHz, f
unw
= 60 MHz
X
mod
90
dB
V
Input level for k = 1 % @ 40 dB AGC
f
w
= 50 MHz, f
unw
= 60 MHz
X
mod
100
105
dB
V
Dimensions of TSDF02424X/TSDF02424XR in mm
14280
TSDF02424X/TSDF02424XR
Vishay Semiconductors
www.vishay.com
4 (4)
Rev. 1, 12Nov01
Document Number 85088
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs
listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay
Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay
Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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