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Электронный компонент: VN2222L

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VN0610L, VN10KLS, VN2222L
Vishay Siliconix
Document Number: 70213
S-04279--Rev. F, 16-Jul-01
www.vishay.com
11-1
N-Channel 60-V (D-S) MOSFETs with Zener Gate
PRODUCT SUMMARY
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max (
W
)
V
GS(th)
(V)
I
D
(A)
VN0610L
5 @ V
GS
= 10 V
0.8 to 2.5
0.27
VN10KLS
60
5 @ V
GS
= 10 V
0.8 to 2.5
0.31
VN2222L
7.5 @ V
GS
= 10 V
0.6 to 2.5
0.23
FEATURES
BENEFITS
APPLICATIONS
D
Zener Diode Input Protected
D
Low On-Resistance: 3
W
D
Ultralow Threshold: 1.2 V
D
Low Input Capacitance: 38 pF
D
Low Input and Output Leakage
D
Extra ESD Protection
D
Low Offset Voltage
D
Low-Voltage Operation
D
High-Speed, Easily Driven
D
Low Error Voltage
D
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
D
Inductive Load Drivers
1
TO-92S
Top View
S
D
G
2
3
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
VN10KLS
VN0610L
VN2222L
Device Marking
Front View
"S" VN
0610L
xxyy
Device Marking
Front View
"S" = Siliconix Logo
xxyy = Date Code
"S" VN
2222L
xxyy
Device Marking
Front View
"S" VN
10KLS
xxyy
"S" = Siliconix Logo
xxyy = Date Code
VN0610L
VN2222L
VN10KLS
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VN2222L
VN0610L
VN10KLS
Unit
Drain-Source Voltage
V
DS
60
60
Gate-Source Voltage
V
GS
15/0.3
15/0.3
V
_
T
A
= 25
_
C
0.27
0.31
Continuous Drain Current
(T
J
= 150
_
C)
T
A
= 100
_
C
I
D
0.17
0.20
A
Pulsed Drain Current
a
I
DM
1
1.0
T
A
= 25
_
C
0.8
0.9
Power Dissipation
T
A
= 100
_
C
P
D
0.32
0.4
W
Thermal Resistance, Junction-to-Ambient
R
thJA
156
139
_
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
Notes
a.
Pulse width limited by maximum junction temperature.
VN0610L, VN10KLS, VN2222L
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70213
S-04279--Rev. F, 16-Jul-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
VN0610L
VN10KLS
VN2222L
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100
m
A
120
60
60
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.2
0.8
2.5
0.6
2.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= 15 V
1
100
100
nA
V
DS
= 48 V, V
GS
= 0 V
10
10
m
Zero Gate Voltage Drain Current
I
DSS
T
J
= 125
_
C
500
500
m
A
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
1
0.75
0.75
A
V
GS
= 5 V, I
D
= 0.2 A
4
7.5
7.5
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 0.5 A
3
5
7.5
W
T
J
= 125
_
C
5.6
9
13.5
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
300
100
100
Common Source Output Conductance
b
g
os
V
DS
= 7.5 V, I
D
= 0.05 A
0.2
mS
Dynamic
Input Capacitance
C
iss
38
60
60
Output Capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
16
25
25
pF
Reverse Transfer Capacitance
C
rss
2
5
5
Switching
c
Turn-On Time
t
ON
V
DD
= 15 V, R
L
= 23
W
^
7
10
10
Turn-Off Time
t
OFF
I
D
^
0.6 A, V
GEN
= 10 V
R
G
= 25
W
9
10
10
ns
Notes
a.
For DESIGN AID ONLY, not subject to production testing.
VNDP06
b.
Pulse test: PW
v
300
m
s duty cycle
v
2%.
c.
Switching time is essentially independent of operating temperature.
VN0610L, VN10KLS, VN2222L
Vishay Siliconix
Document Number: 70213
S-04279--Rev. F, 16-Jul-01
www.vishay.com
11-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
I
D
Drain Current (A)
T
J
Junction Temperature (
_
C)
1.0
0
1
2
3
4
5
0.8
0.6
0.4
0.2
0
6 V
4 V
5 V
2 V
3 V
50
0
0.4
0.8
1.2
1.6
2.0
40
30
20
10
0
1.9 V
1.8 V
1.6 V
1.5 V
1.2 V
1.4 V
0.5
0.4
0.3
0
0
1
5
0.2
0.1
2
3
4
125
_
C
T
J
= 55
_
C
5
4
3
0
0
0.2
1.0
2
1
0.4
0.6
0.8
2.25
2.00
1.75
0.50
50
10
150
1.50
1.25
30
70
110
1.00
0.75
0.1 A
7
0
4
8
12
16
20
6
5
4
0
3
2
1
250 mA
500 mA
V
GS
= 2.0 V
V
GS
= 10 V
V
DS
= 15 V
I
D
= 50 mA
V
GS
= 10 V
V
GS
= 10 V
I
D
= 0.5 A
25
_
C
I
D
Drain Current (mA)
I
D
Drain Current (A)
I
D
Drain Current (A)
r
DS
(
on)

On-Resistance (
)
r
DS
(
on)

Drain-Source On-Resistance (
)
r
DS
(
on)

Drain-Source On-Resistance (
)
(
Normalized)
VN0610L, VN10KLS, VN2222L
Vishay Siliconix
www.vishay.com
11-4
Document Number: 70213
S-04279--Rev. F, 16-Jul-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
1
0.1
0.5
1.0
100
10
V
DD
= 15 V
R
L
= 25
W
V
GS
= 0 to 10 V
Threshold Region
Capacitance
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Gate Charge
Load Condition Effects on Switching
Normalized Ef
fective
T
ransient
Thermal Impedance
t
1
Square Wave Pulse Duration (sec)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Q
g
Total Gate Charge (pC)
t
d(on)
t
d(off)
t
r
t
f
10
1
0.01
0
0.25
1.75
0.1
0.5
0.75
1.0
1.25
1.5
100
_
C
25
_
C
55
_
C
0
_
C
T
J
= 150
_
C
100
80
60
0
0
10
50
40
20
20
30
40
15.0
12.5
10.0
0
0
100
600
7.5
5.0
200
300
400
2.5
500
V
DS
= 30 V
48 V
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
1
100
10
1 K
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
I
D
= 0.5 A
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
I
D
Drain Current (mA)
C
Capacitance (pF)
V
GS

Gate-to-Source V
oltage (V)
t
Switching T
ime (ns)