VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
Document Number: 70212
S-04279--Rev. G, 16-Jul-01
www.vishay.com
11-1
N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max (
W
)
V
GS(th)
(V)
I
D
Min (A)
VN10LLS
5 @ V
GS
= 10 V
0.8 to 2.5
0.32
VN0605T
5 @ V
GS
= 10 V
0.8 to 3.0
0.18
VN0610LL
60
5 @ V
GS
= 10 V
0.8 to 2.5
0.28
VN2222LL
5 @ V
GS
= 10 V
0.6 to 2.5
0.23
FEATURES
BENEFITS
APPLICATIONS
D
Low On-Resistance: 2.5
W
D
Low Threshold: <2.1 V
D
Low Input Capacitance: 22 pF
D
Fast Switching Speed: 7 ns
D
Low Input and Output
Leakage
D
Low Offset Voltage
D
Low-Voltage Operation
D
Easily Driven Without Buffering
D
High-Speed Circuits
D
Low Error Voltage
D
Direct Logic-Level Interface: TTL/CMOS
D
Solid State Relays
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
VN0605T
TO-92S
Top View
S
D
G
1
2
3
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
VN10LLS
VN0610LL
VN2222LL
VN0610LL
"S" VN0
610LL
xxyy
Front View
VN2222LL
"S" VN2
222LL
xxyy
"S" = Siliconix Logo
xxyy = Date Code
Front View
"S" = Siliconix Logo
xxyy = Date Code
VN10LLS
"S" VN
10LLS
xxyy
V2wll
VN0605T
V2 = Part Number Code
for VN0605T
w = Week Code
ll = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VN10LLS
VN0605T
VN0610LL
VN2222LL
Unit
Drain-Source Voltage
V
DS
60
60
60
60
Gate-Source Voltage--Non-Repetitive
b
V
GSM
"
30
"
30
"
30
"
30
V
Gate-Source Voltage--Continuous
V
GS
"
20
"
20
"
20
"
20
Continuous Drain Current
T
A
= 25
_
C
0.32
0.18
0.28
0.23
Continuous Drain Current
(T
J
= 150
_
C)
T
A
= 100
_
C
I
D
0.2
0.11
0.17
0.14
A
Pulsed Drain Current
a
I
DM
1.4
0.72
1.3
1.0
T
A
= 25
_
C
0.9
0.36
0.8
0.8
Power Dissipation
T
A
= 100
_
C
P
D
0.4
0.14
0.32
0.32
W
Thermal Resistance, Junction-to-Ambient
R
thJA
139
350
156
156
_
C/W
Operating Junction and
Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
Notes
a.
Pulse width limited by maximum junction temperature.
b.
t
p
v
50
m
s.
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70212
S-04279--Rev. G, 16-Jul-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
VN10LLS
VN0610LL
VN0605T
VN2222LL
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Drain-Source
V
GS
= 0 V, I
D
= 100
m
A
70
60
60
Drain-Source
Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10
m
A
70
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
2.1
0.8
2.5
0.8
3.0
0.6
2.5
V
DS
= 0 V, V
GS
=
"
20 V
"
100
"
100
Gate-Body Leakage
I
GSS
T
J
=125
_
C
"
500
nA
V
DS
= 0 V, V
GS
=
"
30 V
"
100
V
DS
= 50 V, V
GS
= 0 V
10
1.0
Zero Gate-Voltage
T
J
= 125
_
C
500
500
m
Zero Gate-Voltage
Drain Current
I
DSS
V
DS
= 48 V, V
GS
= 0 V
10
m
A
T
J
= 125
_
C
500
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
1000
750
500
750
mA
V
GS
= 4.5 V, I
D
= 50 mA
4.5
7.5
Drain-Source
V
GS
= 5 V, I
D
= 0.2 A
4.5
7.5
7.5
W
Drain-Source
On-Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 0.5 A
2.4
5
5
7.5
W
T
J
= 125
_
C
4.4
9
10
13.5
Forward
V
DS
= 10 V, I
D
= 0.5 A
230
100
100
Forward
Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.2 A
180
80
mS
Common Source
Output Conductance
b
g
os
V
DS
= 5 V, I
D
= 50 mA
500
m
s
Dynamic
Input Capacitance
C
iss
22
60
60
60
Output Capacitance
C
oss
V
DS
=25 V, V
GS
= 0 V
11
25
25
25
pF
Reverse Transfer
Capacitance
C
rss
f = 1 MHz
2
5
5
5
pF
Switching
c
Turn-On Time
t
ON
V
DD
= 15 V, R
L
= 23
W
, I
D
^
0.6 A
7
10
10
Turn-Off Time
t
OFF
V
DD
= 15 V, R
L
= 23
W
, I
D
^
0.6 A
V
GEN
= 10 V, R
G
= 25
W
7
10
10
Turn-On Time
t
ON
V
DD
= 30 V, R
L
= 150
W
, I
D
^
0.2 A
7
20
ns
Turn-Off Time
t
OFF
V
DD
= 30 V, R
L
= 150
W
, I
D
^
0.2 A
V
GEN
= 10 V, R
G
= 25
W
11
20
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
VNBF06
b.
Pulse test: PW
v
300
m
s duty cycle
v
3%.
c.
Switching time is essentially independent of operating temperature.
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
Document Number: 70212
S-04279--Rev. G, 16-Jul-01
www.vishay.com
11-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
V
GS
= 10, 9, 8, 7 V
6.5 V
V
GS
Gate-to-Source Voltage (V)
T
J
= 55
_
C
125
_
C
6 V
5.5 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
2, 1 V
25
_
C
0
4
8
12
16
20
0
400
800
1200
1600
2000
2400
0.0
0.5
1.0
1.5
2.0
55
30
5
20
45
70
95
120
145
0
1
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Gate Charge
On-Resistance vs. Drain Current
Q
g
Total Gate Charge (pC)
V
DS
Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 30 V
I
D
= 0.5 A
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
V
GS
= 10 V, r
DS
@ 0.5 A
T
J
Junction Temperature (
_
C)
r
DS
@ 10 V = V
GS
r
DS
@ 5 V = V
GS
T
J
= 25
_
C
V
GS
= 5 V, r
DS
@ 0.05 A
V
GS
= 0 V
f = 1 MHz
I
D
Drain Current (A)
I
D
Drain Current (A)
C
Capacitance (pF)
r
DS
(
on)
On-Resistance (
)
V
GS
Gate-to-Source V
oltage (V)
r
DS
(
on)
On-Resistance (
)
(
Normalized)
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
www.vishay.com
11-4
Document Number: 70212
S-04279--Rev. G, 16-Jul-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
0.001
0.010
0.100
1.000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
0
1
2
3
4
5
6
0
2
4
6
8
10
12
14
16
18
20
500 mA
I
D
= 50 mA
T
J
= 125
_
C
T
J
= 25
_
C
Threshold Voltage
T
J
Junction Temperature (
_
C)
0.75
0.50
0.25
0.00
0.25
0.50
50
25
0
25
50
75
100
125
150
I
D
= 250
m
A
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
1
100
10
1 K
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Normalized Ef
fective
T
ransient
Thermal Impedance
t
1
Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
I
S
Source Current (A)
r
DS
(
on)
On-Resistance (
)
V
GS
(t
h
)
V
ariance (V)
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