1SS 355
WEITRON
Maximum Ratings
Thermal Characteristics
Device Marking
Electrical Characteristics
(T
A
=25 C Unless Otherwise note)
Off Characteristics
Rating
Symbol
Value
Unit
Characterictics
Symbol
Max
Unit
Characterictics
Symbol
Max
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
V
R
I
F
I
FM(Surge)
100
100
500
Vdc
mAdc
mAdc
Total Device Dissipation FR-5
Board T
A
=25 C
Derate Above 25 C
Thermal Resistance, Junction
to Ambient
Total Device Dissipation Alumina
Substrate,
(2)
T
A
=25 C
Derate Above 25 C
Thermal Resistance, Junction to
Ambient
Junction and Storage
Temperature
P
D
P
D
R
JA
TJ, T
stg
225
1.8
556
300
2.4
417
-55 to + 150
mW
mW/ C
mW
mW/ C
C/W
C/W
C
Min
Reverse Breakdown Votalge
(IR=100Adc)
Forward Voltage(IF=100mAdc)
Reverse Voltage
Leakage Current
(V
R
=80Vdc)
Revarse Recover Time
(I
F
=I
R
=10mAdc)
V(BR)
V
F
I
R
Diode Capacitance
(V
R
=0.5V, f=1.0MHz)
C
T
trr
100
1200
3.5
4.0
Vcc
mV dc
Adc
pF
ns
1. FR-5=1.0x0.75x0.062 in 2.Alumina=0.4x0.3x0.024 in. 99.5% alumina.
Item
Marking
Eqivalent Circuitdiagram
1SS 355
5D
2
1
0.1
http://www.weitron.com.tw
q
R
JA
q
+10V
820
2.0K
100 H
0.1F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
IF
D.U.T.
0.1F
VR
INPUT SIGNAL
tr
tp
10%
90%
t
IF
IR
trr
t
IR(REC)=1.0mA
OUTPUT PULSE
(IF=IR=10mA, MEASURED
AT IR(REC)=1.0mA
Notes:1. A 2.0 k variable resistor for a Forward Current (IF) 0f 10 mA
2. Input pules is adjusted so IR(peak) is equal to 10 mA
3. tp trr
Figure 1. Recovery Time Equivalent Test Circuit
1SS 355
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
C
D
,
D
I
O
D
E
C
A
P
A
C
I
T
A
N
C
E
(
p
F )
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
IF
,
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(
m
A
)
WEITRON
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
IR
,
R
E
V
E
R
S
E
C
U
R
R
E
N
T
(
n
A
)
Scattering Limit
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
1000
100
10
1
0.1
10
20
30
50
70
100
120
100
80
60
40
20
0
0
2
4
6
8
10
1.2
1.0
0.8
0.6
0.4
0.2
0
f=1MHZ
Tj=25
Scattering Limit
C
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