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Электронный компонент: 2N3904

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ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Value
Unit
Vdc
Vdc
Vdc
mAdc
Rating
2N3904
Tstg
PD
C
C
WEITRON
http://www.weitron.com.tw
NPN General Purpose Transistors
(Ta=25 C)
60
6.0
200
40
Total Device Dissipation T =25 C
0.625
W
Junction Temperature
T j
150
Storage, Temperature
-55 to +150
A
TO-92
1
2
3
1. EMITTER
2. BASE
3. COLLECTOR
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 Adc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 Adc, IC=0)
Collector Cutoff Current (VCE= 40 Vdc, I =0)
Collector Cutoff Current (VCB= 60 Vdc, IE=0)
Emitter Cutoff Current (VEB= 5.0V c, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICE0
ICBO
IEBO
6.0
-
-
-
-
-
-
0.1
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
40
60
0.1
0.1
d
B
C
Current-Gain-Bandwidth Product
(IC= 10 mAdc, VCE= 20 Vdc, f=100 MHz)
fT
MHz
Collector-Emitter Saturation Voltage
(IC= 50 mAdc, IB= 5 mAdc)
DC Current Gain
DC Current Gain
Base-Emitter Saturation Voltage
(IC= 50 mAdc, IB= 5 mAdc)
hFE
hFE
VCE(sat)
VBE(sat)
Vdc
Vdc
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
-
-
-
-
-
-
-
300
-
-
2N3904
WEITRON
http://www.weitron.com.tw
(IC= 10 mAdc, VCE=1.0 Vdc)
(IC= 50 mAdc, VCE= 1.0 Vdc)
100
400
(1)
(2)
60
0.3
0.95
-
Classification of hFE(1)
Rank
O
Y
G
Range
100-200
200-300
300-400
TYP
-
WEITRON
http://www.weitron.com.tw
2N3904
FIG1
FIG2
WEITRON
http://www.weitron.com.tw
2N3904
Dim
A
B
C
D
E
G
H
J
K
L
Min
3.30
1.10
0.38
0.36
4.40
3.43
4.30
Max
TO-92
TO-92 Outline Dimensions
unit:mm
3.70
1.40
0.55
0.51
4.70
-
4.70
2.64
14.50
1.270TYP
E
C
H
A
B
D
L
J
K
G
2.44
14.10