ChipFind - документация

Электронный компонент: 2N7002W

Скачать:  PDF   ZIP
WEITRON
http://www.weitron.com.tw
2N7002W
Rating
Symbol
Value
Unit
V
GS
I
D
P
D
R
JA
20
115
200
625
Operating Junction and Storage
Temperature Range
T
J
, Tstg
-55 to 150
C
V
mA
mW
C/W
Gate-Source Voltage
Continuous Drain Current (TA=25 C)
Power Dissipation (TA=25 C)
Maximax Junction-to-Ambient
Maximum Ratings
(TA=25 C Unless Otherwise Specified)
Device Marking
2N7002W=K72
N-Channel MOSFET
Features:
*Low On-Resistance : 7.5
*Low Input Capacitance: 22PF
*Low Output Capacitance : 11PF
*Low Threshold Voltage :1 .5V(TYE)
*Fast Switching Speed : 7ns
1
2
3
GATE
SOURCE
DRAIN
SOT-323(SC-70)
1
2
3
Drain-Source Voltage
V
DS
60
V
WEITRON
http://www.weitron.com.tw
2N7002W
Input Capacitance
V
DS
=25V, V
GS
=0V, f=1MHZ
Output Capacitance
V
DS
=25V, V
GS
=0V, f=1MHZ
Reverse Transfer Capacitance
V
DS
=25V, V
GS
=0V, f=1MHZ
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=10 uA
Gate-Threshold Voltage
V
DS
=V , I =-250uA
Gate-body Leakage
V
GS
= 20V, V
DS
=0V
On-State Drain Current
V
GS
=10V, V
DS
=7.5V
Drain-Source On-Resistance
V
GS
=5V, I
D
=0.05A @
V
GS
=10V, I
D
=0.5A @
Forward Transconductance
V
DS
=10V, I
D
=0.2A
Static
Dynamic
Switching
Characteristic
Symbol
Unit
Min
Typ
Max
V
(BR)DSS
V
GS (th)
I
D (
on
)
R
DS (
on
)
I
GSS
I
DSS
g
fs
C
iss
C
oss
C
rss
t
d
(
on
)
t
d(off)
60
(1)
70
V
1.0
2.0
V
-
1.5
-
-
-
-
-
1.0
500
-
10
nA
uA
A
mS
0.5
1.0
3.2
4.4
7.5
50
25
5.0
22
11
2.0
F
7.0
11
ns
ns
20
20
Electrical Characteristics
(TA=25 C Unless otherwise noted)
Zero Gate Voltage Drain Current
-
-
-
80
-
-
-
-
-
-
-
Turn-On Time
V
DD
=30V, R
L
=150 ,I
D
=0.2A
V
GEN
=10V, R
GEN
=25
Turn-Off Time
V
DD
=30V, R
L
=150 , I
D
=0.2A
V
GEN
=10V, R
GEN
=25
GS D
_
+
+
_
Tc=25 C
Tc=125 C
Tj=25 C
Tj =125 C
V
DS
=60V, V
GS
=0V @
V
DS
=60V, V
GS
=0V @
13.5
Note:
1. Pulse Test: pulse width 300us, duty cycle 2%
<_
<_
P
WEITRON
http://www.weitron.com.tw
2N7002W
FIG.1 Ohmic Region
FIG.3 Temperature Versus Static
Drain-Source On-Resistance
FIG.4 Temperature Versus Gate
Threshold Voltage
FIG.2 Transfer Characteristics
V ,DRAIN SOURCE VOLTAGE(V)
T ,TEMPERATURE( C)
DS
V ,GATE SOURCE VOLTAGE(V)
GS
I



,
D
R
I
A
N

C
U
R
R
E
N
T
(
A
)
D
I



,
D
R
I
A
N

C
U
R
R
E
N
T
(
A
)
D
I











,
S
T
A
T
I
C

D
R
A
I
N
-
S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
E
(
N
O
R
M
A
L
I
Z
E
D
)
D
S
(
o
n
)
V











,
T
H
R
E
S
H
O
L
D

V
O
L
T
A
G
E

(
N
O
R
M
Z
L
I
Z
E
D
)
G
S
(
t
h
)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
1.0
0.8
0.6
0.4
0.2
10
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
- 60
- 20
+ 20
+ 60
+ 100
+ 140
- 60
- 20
+ 20
+ 60
+ 100
+ 140
T =25 C
9V
8V
7V
6V
5V
4V
3V
a
V =10V
GS
V =10V
I =200mA
GS
V =V
DS GS
D
I =1.0mA
D
V =10V
GS
-55 C
125 C
T ,TEMPERATURE( C)
25 C
2N7002W
WEITRON
http://www.weitron.com.tw
Unit:mm
SOT-323 Outline Demensions
A
B
D
E
G
M
L
H
J
T OP VIE W
K
C
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.30
1.15
2.00
-
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
SOT-323