1
.
9
0
.
9
5
0
.
9
5
1
.
0
2
.
9
2. 4
1. 3
0
.
4
A1015LT1
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM:
0.2 W (Tamb=25 )
Collector current
I
CM:
-0.15 A
Collector-base voltage
V
(BR)CBO:
-50 V
Operating and storage junction temperature range
T
J
, T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= -100
A, I
E
=0
-50
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= -0.1mA, I
B
=0
50
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -10A, I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
=-50V , I
E
=0
-0.1
A
Collector cut-off current
I
CEO
V
CE
= -50V , I
B
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
=- 5V , I
C
=0
-0.1
A
DC current gain
H
FE(1)
V
CE
=-6V, I
C
= -2mA
130
400
Collector-emitter saturation voltage
V
CE
(sat) I
C
=-100 mA, I
B
= -10mA
-0.3
V
Base-emitter saturation voltage
V
BE
(sat) I
C
=-100 mA, I
B
= -10mA
-1.1
V
Transition frequency
f
T
V
CE
=-10V, I
C
= -1mA
f=
30MHz
80
MHz
CLASSIFICATION OF H
FE(1)
Rank
L H
Range
130-200 200- 400
MARKING
BA
Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
A1015LT1
WEITRON
http://www.weitron.com.tw
-
-
* "G" Lead(Pb)-Free
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