Surface Mount Switching Diode
*Low Current Leakage
*Low Forward Voltage
*Reverse Recover Time Trr 6ns
*Small Outline Surface Mount SOT-323 Package
Features:
WEITRON
WEITRON
http://www.weitron.com.tw
SWITCHING DIODE
200-215m AMPERRES
70-75 VOLTS
BAS16W / BAV70W
BAW56W / BAV99W
SOT-323(SC-70)
1
2
3
Unit:mm
SOT-323 Outline Demensions
A
B
D
E
G
M
L
H
J
T OP VIE W
K
C
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.30
1.15
2.00
-
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
SOT-323
WEITRON
Maximum Ratings
(EACH DIODE)
Characteristic
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
Unit
Volts
Thermal Characteristics
Characteristic
Symbol
Total Device Dissipation FR-5
Board *
1
, TA=25 C
Derate Above 25 C
Total Device Dissipation
Alumina Substrate*
2
TA=25 C
Derate Above 25 C
P
D
P
D
Max
Unit
BAS16W / BAV70W
BAW56W / BAV99W
Unit
BAS16W BAV70W BAW56W BAV99W
75
70
200
215
500
mAdc
mAdc
IF
IFM
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
R JA
TJ, Tstg
200
1.6
625
300
2.4
417
-55 to + 150
mW
mW/ C
mW
mW/ C
C/W
C/W
C
*1 ER-5=1.0x0.75x0.062 in
*2 Alumina=0.4x0.3x0.024 in 99.5% Alumina
Electrical Characteristics
(TA=25 C Unless Otherwise Note) (Each Diode)
Characteristic
Symbol
Min
Max
Off Characteristics
Adc
Reverse Breakdown Voltage BAS16W
Adc
(IBR=100 ) BAV70W/BAW56W/BAV99W
Reverse Voltage Leakage Current
VR=75V
VR=70V
VR=25V, TJ=150 C
VR=25V, TJ=150 C
VR=75V, TJ=150 C
VR=70V, TJ=150 C
VR=70V, TJ=150 C
BAS16W
BAV70W/BAW56W/BAV99W
BAS16W/BAW56W/BAV99W
BAV70W
BAS16W
BAW56W/BAV99W
BAV70W
VBR
IR
75
70
Vdc
1.0
2.5
30.0
60.0
50.0
50.0
100.0
http://www.weitron.com.tw
q
R JA
q
WEITRON
BAS16W / BAV70W
BAW56W / BAV99W
Off Characteristic
Unit
Characteristic
Symbol
Min
Max
Diode Capacition
(VR=0, f=1.0MHz)
BAS16W/BAW56W
BAV70W/BAV99W
Forward Voltage
(IF=1.0 mAdc)
(IF=10 mAdc)
(IF=50 mAdc)
(IF=150 mAdc)
Reverse Recovery Time (Figure 1.)
IF=IR=10 mAdc, VR=5.0Vdc
IR(REC)=1.0 mAdc, RL=100
C
D
VF
trr
2.0
1.5
715
855
1000
1250
6.0
PF
mVdc
nS
Device Marking
Item
Marking
Eqivalent Circuit diagram
1
2
3
1
2
3
BAS16W
BAV70W
BAW56W
BAV99W
A6
A4
A1
A7
1
2
3
+10V
820
2.0K
100 H
0.1F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
IF
D.U.T.
0.1F
VR
INPUT SIGNAL
tr
tp
10%
90%
t
IF
IR
trr
t
IR(REC)=1.0mA
OUTPUT PULSE
(IF=IR=10mA, MEASURED
AT IR(REC)=1.0mA
Notes:1. A 2.0 k variable resistor for a Forward Current (IF) 0f 10 mA
2. Input pules is adjusted so IR(peak) is equal to 10 mA
3. tp trr
Figure 1. Recovery Time Equivalent Test Circuit
http://www.weitron.com.tw
3
1
WEITRON
BAS16W / BAV70W
BAW56W / BAV99W
0
2
4
6
8
VR. REVERSW VOLTAGE (VOLTS)
C
D
.
D
I
O
D
E
C
A
P
A
C
I
T
A
N
C
E
( P
F
)
1.00
0.90
0.80
0.70
0.60
FIGURE 5. CAPACITANCE (BAV70W)
0
2
4
6
8
0.68
0.64
0.60
0.56
0.52
VR. REVERSE VOLTAGE (VOLTS)
C
D
.
D
I
O
D
E
C
A
P
A
C
I
T
A
N
C
E
( P
F
)
FIGURE 4. CAPACITANCE(BAS16W)
0
2
4
6
8
VR. REVERSE VOLTAGE (VOLTS)
C
D
.
D
I
O
D
E
C
A
P
A
C
I
T
A
N
C
E
( P
F
)
0.68
0.64
0.60
0.56
0.52
FIGUTRE 7. CAPACITANCE (BAV99W)
VR. REVERSE VOLTAGE (VOLTS)
C
D
.
D
I
O
D
E
C
A
P
A
C
I
T
A
N
C
E
( P
F
)
FIGURE 6. CAPACITANCE(BAW56W)
0
2
4
6
8
1.75
1.50
1.25
1.00
0.75
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0
10
20
30
40
50
VR. REVERSE VOLTAGE (VOLTS)
I A
.
R
E
V
E
R
S
E
C
U
R
R
E
N
T
(
A
)
10
1.0
0.1
0.01
0.001
TA=150 C
TA=125 C
TA=25 C
TA=55 C
TA=85 C
FIGURE 3. LEAKAGE CURRENT
0.2
0.4
0.6
0.8
1.0
1.2
VF, FORWARD VOLTAGE (VOLTS)
100
10
1.0
0.1
I F
,
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(
m
A
)
FIGURE 2 .FORWARD VOLTAGE
TA=-40 C
TA=25 C
TA=85 C
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