General Purpose Transistor
NPN Silicon
Collector-Emitter Voltage
Symbol
VCEO
Value
45
Unit
Rating
1
2
3
BASE
COLLECTOR
EMITTER
SOT-23
IC
VCBO
VEBO
50
5.0
mAdc
Vdc
Vdc
Vdc
1
2
3
Collector Current-Continuous
500
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina
Device Marking
h t t p : / / w w w . w e i t r o n . c o m . t w
W E I T R O N
M aximum R atings
( T
A
=25 C unless otherwise noted)
Total Device Dissipation FR-5 Board
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C
Derate above 25 C
Junction and Storage, Temperature Range
Characteristics
TJ,Tstg
R JA
PD
PD
Symbol
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Thermal Characteristics
(Note 1.)
(Note 2.)
q
R JA
q
BC817-16/BC817-25
BC817-40
Collector-Base Voltage
Emitter-Base Voltage
BC817-16=6A, BC817-25=6B, BC817-40=6C
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WE IT R ON
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= 10mA, VCE= 5.0Vdc, f=100MHz)
Output Capacitance
(VCB= 10V, f=1.0MHz)
fT
Cobo
MHz
pF
100
-
10
-
-
-
V
V
DC Current Gain
(IC= 100mA, VCE=1.0V)
Collector-Emitter Saturation Voltage
(IC= 500mA, IB=50mA)
Base-Emitter On Voltage
(IC= 500mA, VCE=1.0V)
hFE
VCE(sat)
VBE(on)
On Characteristics
250
0.7
1.2
-
-
-
-
-
-
-
-
(IC= 500mA, VCE=1.0V)
BC817-16/BC817-25
Collector-Emitter Breakdown Voltage
(IC= 10mA)
Collector-Emitter Breakdown Voltage
(IC=10 A ,VEB=0)
Emitter-Base Breakdown Voltage
(IE=1.0 A)
Collector Cutoff Current (VCB=20V)
(VCB=20V, TA=150 C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
nA
mA
V
V
V
Characteristics
Symbol
Min
Max
Unit
Off Characteristics
Typ
45
50
5.0
-
-
-
-
100
5.0
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
BC817-40
-
-
-
-
-
-
BC817-16
BC817-25
BC817-40
100
160
250
40
400
600
IB, BASE CURRENT (mA)
Figure 2. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 3. On V oltages
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. T emperature Coefficients
+1
IC, COLLECTOR CURRENT (mA)
Figure 5. Capacitances
0.1
1
1
10
100
1000
-2
-1
0
V C
E
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
LT
A
G
E
(
V
O
L
T
S
)
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
V,
T
E
M
P
E
R
A
T
U
R
E
C
O
E
F
F
I
C
I
E
N
T
S
(
m
V
/
C
)
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
10
100
1
1.0
0.8
0.6
0.4
0.2
0
1
10
1000
100
10
100
TJ = 25 C
IC = 10 mA
TA = 25 C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1 V
VCE(sat) @ IC/IB = 10
VC for VCE(sat)
VB for VBE
Cob
Cib
100 mA
300 mA
500 mA
IC, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
h F
E
,
D
C
C
U
R
R
E
N
T
G
A
I
N
1000
10
1000
0.1
10
100
100
1.0
VCE = 1 V
TJ = 25 C
" "
q
q
q
BC817-16/BC817-25
BC817-40
WEITRON
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Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
A
B
D
E
G
M
L
H
J
TOP VIEW
K
C
S OT -23
SOT-23 Package Outline Dimension
BC817-16/BC817-25
BC817-40
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