ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Rating
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
SOT-223
Tstg
Tj
P
D
I
C
V
EBO
V
CEO
V
CBO
WEITRON
http://www.weitron.com.tw
PNP Silicon Epitaxial Transistor
(T
A
=25 C)
Storage Temperature
Junction Temperature
Total Device Disspation T
A
=25C
Collector Current
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Base Voltage
BV
CEO
BV
CBO
-20
-25
-
-
Max
-
-
V
V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
I
C
=-100A, I
E
=0
I
C
=-1mA, I
B
=0
BV
EBO
I
CBO
I
EBO
-5.0
-
-
V
-10
-
-
A
-10
-
-
A
Emitter-Base Breakdown Voltage
I
E
=-10A, I
C
=0
Collector Cut-Off Current
V
CB
=-25V, I
E
=0
Emitter-Cut-Off Current
V
EB
=-5V, I
C
=0
C
C
W
A
V
V
V
-65 to +150
+150
1.5
-1.0
-5.0
-20
-25
Device Marking
BCP69 = BCP69
3.EMITTER
2.COLLECTOR
1.BASE
4.COLLECTOR
1
2
3
4
BASE
1
COLLECTOR
2, 4
3
EMITTER
1/4
14-Feb-06
Lead(Pb)-Free
P b
BCP69
WEITRON
http://www.weitron.com.tw
ELECTRICAL CHARACTERISTICS
(T
A
=25C Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(1)
DC Current Gain
V
CE
=-10V, I
C
=-5mA
V
CE
=-1V, I
C
=-500mA
V
CE
=-1V, I
C
=-1A
V
CE
=-1V, I
C
=-1A
Collector-Emitter Saturation Voltage
I
C
=-1A, I
B
=-100mA
Base-Emitter On Voltage
Transition Frequency
V
CE
=-10V, I
C
=-100mA, f=50MHz
h
FE1
h
FE2
h
FE3
50
85
60
-
-
-
-
375
-
-
V
CE(sat)
V
BE(on)
-
-
-500
mV
-
-
-1.0
V
-
60
-
MHz
f
T
2/4
Note 1.Pulse Test : Pulse width < 380s, Duty cycle 2%.
BCP69
14-Feb-06
WEITRON
http://www.weitron.com.tw
3/4
14-Feb-06
BCP69
Typical Characteristics
200
100
70
20
-10
I
C
, COLLECTOR CURRENT (mA)
Fig.1 DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Fig.3 Current Gain Bandwidth Product
300
200
100
30
70
I
C
, COLLECTOR CURRENT (mA)
Fig.2 Saturation and "ON" Voltages
0
-0.2
-0.4
-0.6
-0.8
160
0
V
R
, REVERSE VOLTAGE (VOLTS)
Fig.4 Capacitances
50
V
CE
= -1.0 V
T
J
= 25C
50
-10
V
CE
= -10 V
T
J
= 25C
f = 30 MHz
-1.0
-1.0
-100
-1000
-10
V
(BE)sat
@ I
C
/I
B
= 10
T
J
= 25C
V
(BE)on
@ V
CE
= -1.0 V
V
(CE)sat
@ I
C
/I
B
= 10
120
80
40
C
ob
C
ib
-1.0
C
ib
Cob
T
J
= 25C
-1.0
-1.5
V, VOLTAGE(V)
C, CAPACITANCE(pF)
f
T
, CURRENT GAIN BANDWIDTH PRODUCT(MHz)
h
FE
, CURRENT GAIN
-100
-1000
-100
-1000
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