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Электронный компонент: C1815LT1

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C1815LT1
TRANSISTOR (NPN)
FEATURES

Power dissipation
P
CM:
0.2 W (Tamb=25 )
Collector current
I
CM:
0.15 A
Collector-base voltage
V
(BR)CBO
: 60 V
Operating and storage junction temperature range
T
J
, T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= 100
A, I
E
=0
60
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic =
0.1mA,
I
B
=0
V
Collector cut-off current
I
CBO
V
CB
=60V, I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CE
=50V, I
B
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 5V, I
C
=0
0.1
A
DC current gain
h
FE(1)
V
CE
= 6V, I
C
= 2mA
130
400
Collector-emitter saturation voltage
V
CE
(sat) I
C
=100 mA, I
B
=
10mA
V
Base-emitter saturation voltage
V
BE
(sat) I
C
=100 mA, I
B
= 10mA
1
V
Transition frequency
f
T
V
CE
=10V, I
C
= 1mA
f=
30MHz
80
MHz
CLASSIFICATION OF h
FE(1)
Rank
L
H
Range
130-200 200- 400
DEVICE MARKING
C1815LT1=HF
Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
C1815LT1
http://www.weitron.com.tw
WEITRON
50
0.25
* "G" Lead(Pb)-Free
C1815LT1
WEITRON
http://www.weitron.com.tw
C1815LT1
WEITRON
http://www.weitron.com.tw