PNP General Purpose Transistors
1.FR-5=1.0 x 0.75 x 0.062 in
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina
MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
2907
-40
-60
2907A
-60
Unit
Vdc
Vdc
Vdc
mAdc
-600
-5.0
Rating
Total Device Dissipation FR-5 Board (1)
TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 C
Derate above 25 C
Junction and Storage, Temperature
Characteristics
TJ,Tstg
R JA
PD
PD
Symbol
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
THERMAL CHARACTERISTICS
MMBT2907=M2B; MMBT2907A=2F
DEVICE MARKING
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -10 Adc, IE=0)
Emitter-Base Breakdown Voltage (IE= -10 Adc, IC=0)
Collector Cutoff Current (VCE= -30 Vdc, VEB (0ff)= -0.5Vdc)
Collector Cutoff Current (VCB= -50 Vdc, IE=0)
(VCB= -50Vdc, IE=0, TA=125 C)
Base Cutoff Current (VCE= -30Vdc, VEB(off)= -0.5Vdc)
MMBT2907
MMBT2907A
MMBT2907
MMBT22907A
MMBT2907
MMBT2907A
MMBT2907A
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IB
-40
-60
-60
-5.0
-
-
-
-
-
-
-
-
-
-
-50
-0.020
-0.010
-20
-10
-50
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
OFF CHARACTERISTICS
MMBT2907
MMBT2907A
1
2
3
BASE
COLLECTOR
EMITTER
WEITRON
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R JA
q
q
SOT-23
1
2
3
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (1),(2)
(IC= -50 mAdc, VCE -=20 Vdc, f=100MHz)
Output Capacitance
(VCB= -10 Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB= -2.0 Vdc, IC=0, f=1.0MHz)
fT
Cobo
Cibo
200
-
-
-
-
-
8.0
30
MHz
pF
pF
DC Current Gain
(IC= -0.1 mAdc, VCE= -10 Vdc)
(IC= -1.0 mAdc, VCE= -10 Vdc)
(IC= -10 mAdc, VCE= -10 Vdc)
(IC= -150 mAdc, VCE= -10 Vdc)
(IC= -500 mAdc, VCE= -10 Vdc)
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
MMBT2907
MMBT22907A
MMBT2907
MMBT22907A
MMBT2907
MMBT2907A
Collector-Emitter Saturation Voltage
(IC= -150 mAdc, IB= -15mAdc)
(IC= -500 mAdc, IB= -50mAdc)
Base-Emitter Saturation Voltage
(IC= -150 mAdc, IB= -15mAdc)
(IC= -500 mAdc, IB= -50mAdc)
hFE
VCE(sat)
VBE(sat)
Vdc
Vdc
-1.3
-2.6
-0.4
-1.6
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
MMBT2907
MMBT2907A
35
75
50
100
75
100
100
30
50
300
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Turn-Out Time
Storage Time
Fall Time
(VCC= -30 Vdc, IC= -150 mAdc, IB1= -15 mAdc)
(VCC= -60 Vdc, IC= -150 mAdc,
IB1=IB2= -15 mAdc)
td
tr
ts
tf
-
-
-
-
-
-
45
10
40
100
ns
1.Pulse Test:Pulse Width=300 s, Duty Cycle 2.0%.
2.f
T
is defined as the frequency at which hfe extrapolates to unity.
Turn-On Time
toff
<
ton
80
30
-
-
-
-
-
-
-
-
-
-
-
-
WEITRON
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_
MMBT2907
MMBT2907A
REVERSE BIAS VOLTAGE (V)
-0.1
-1
-10
-50
20
16
12
8
4
0
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
Cob
Cib
FIG.6 Input and Output Capacitance
vs Reverse Bias Voltage
FIG.5 Collector-Cutoff Current
vs. Ambient Temperature
VCB=35V
25
50
75
100
125
TA- AMBIENT TEMPERATURE ( C)
I
C
B
O
-
C
O
L
L
E
C
T
O
R
C
U
R
E
E
N
T
(
n
A
)
1
100
10
0.1
0.01
Ic-COLLECTOR CURRENT (mA)
FIG.3 Base-Emitter Saturation Voltage
vs Collector Current
-40 C
25 C
125 C
b=10
1
10
100
500
1
0.8
0.6
0.4
0.2
0
V
B
E
S
T
B
A
S
E
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
Ic-COLLECTOR CURRENT (mA)
0.1
1
10
25
FIG.4 Base Emitter ON Voltage
vs Collector Current
-40 C
25 C
125 C
VCE=5V
1
0.8
0.6
0.4
0.2
0
V
B
E
O
N
B
A
S
E
E
M
I
T
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
FIG.2 Collector-Emitter Saturation
Voltage vs collector Current
I
C
COLLECTOR CURRENT(mA)
V
C
E
B
A
T
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
1
10
100
500
0.5
0.4
0.3
0.2
0.1
0
b=10
25 C
125 C
-40 C
I
C
COLLECTOR CURRENT(mA)
0.1
0.3
1
3
10
30
100
300
500
400
300
200
100
0
h
F
E
T
Y
P
I
C
A
L
P
U
L
S
E
D
C
U
R
R
E
N
T
G
A
I
N
FIG.1 Typical Pulsed Current Gain
vs Collector Current
VCE=5V
125 C
25 C
-40 C
WEITRON
Typical Electrical Characteristics
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MMBT2907
MMBT2907A
Ic-COLLECTOR CURRENT (mA)
10
100
1000
250
200
150
100
50
0
T
I
M
E
(
n
S
)
FIG.7 Switching Times
vs Collector Current
IB1=IB2=
Ic
10
VCC=15V
ts
tf
tr
td
Ic-COLLECTOR CURRENT (mA)
10
100
1000
T
I
M
E
(
n
S
)
FIG.8 Turn On and Turn Off Times
vs Collector Cuttent
500
400
300
200
100
0
IB1=IB2=
Ic
10
VCC=15V
t on
t off
Typical Characteristics(Continued)
WEITRON
IC COLLERTOR CURRENT (mA)
I
B
1
T
U
R
N
O
N
B
A
S
E
C
U
R
R
E
N
T
(
m
A
)
10
100
500
50
20
10
5
2
1
tr=15V
30ns
60ns
FIG.9 Rise Time vs Collector
and Turn On Base Current
FIG.10 Power Dissipation
vs Ambient Temperature
TEMPERATURE ( C)
P D
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(
W
)
0
25
50
75
100
125
150
1
0.75
0.5
0.25
0
SOT-23
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MMBT2907
MMBT2907A
FIG.11 Saturated Turn-On Switching Time
FIG.12 Saturated Turn-Off Switching Time
WEITRON
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