General Purpose Transistor
PNP Silicon
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width 300 S, Duty Cycle 2.0%.
Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-40
-40
-5.0
Unit
Vdc
Vdc
Vdc
mAdc
-200
Rating
MMBT3906=2A
Device Marking
Collector-Emitter Breakdown Voltage
(3)
(I
C
=-1.0mAdc.I
B
=0)
Collector-Base Breakdown Voltage (I
C
=-10 Adc, I
E
=0)
Emitter-Base Breakdown Voltage (I
E
=-10 Adc, I
C
=0)
Base Cutoff Current (V
CE
=-30 Vdc,V
EB
=-3.0 Vdc)
Collector Cutoff Current (V
CE
=-30Vdc,V
EB
=-3.0Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
-50
-50
Vdc
Vdc
Vdc
nAdc
nAdc
Off Characteristics
MMBT3906
1
2
3
BASE
COLLECTOR
EMITTER
-40
-40
-5.0
-
-
-
-
-
<
=
<
=
Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
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WEITRON
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
=25 C
Derate above 25 C
Junction and Storage,Temperature
Characteristics
TJ,Tstg
R JA
PD
PD
Symbol
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Thermal Characteristics
R JA
SOT-23
1
2
3
Lead(Pb)-Free
P b
MMBT3906
Small-signal Characteristics
Current-Gain-Bandwidth Product (4)
(IC= -10 mAdc, VCE= -20 Vdc, f=100MHz)
Output Capacitance
(VCB= -5.0 Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB= -0.5 Vdc, IC=0, f=1.0MHz)
Input Impedance
(VCE= -10 Vdc IC=-1.0 mAdc, f=1.0 kHz)
Voltage Feeback Radio
(VCE= -10Vdc IC=1.0 mAdc, f=1.0 kHz)
Small-Signal Current Gain
(VCE= -10Vdc IC=1.0 mAdc, , f=1.0 kHz)
Output Admittance
(VCE= -10Vdc IC=1.0 mAdc, f=-1.0kHz)
Noise Figure
(VCE= -5.0Vdc IC= -100 Adc, , RS=1.0k ohms, f=1.0kHz)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
250
-
-
-
-
0.1
2.0
100
3.0
4.5
4.0
MHz
pF
pF
k ohms
x 10-4
-
mhos
dB
60
400
10
12
10
DC Current Gain
(IC= -0.1 mAdc, VCE= -1.0Vdc)
(IC= -1.0 mAdc, VCE= -1.0 Vdc)
(IC= -10 mAdc, VCE= -1.0Vdc)
(IC= -50 mAdc, VCE= -1.0Vdc)
(IC= -100 mAdc, VCE= -1.0Vdc)
Collector-Emitter Saturation Voltage
(3)
(IC= -10 mAdc, IB= -1.0mAdc)
(IC= -50 mAdc, IB= -5.0mAdc)
Base-Emitter Saturation Voltage
(3)
(IC= -10 mAdc, IB= -1.0 mAdc)
(IC= -50 mAdc, IB= -5.0 mAdc)
HFE
VCE(sat)
VBE(sat)
-
Vdc
Vdc
60
80
100
60
30
-
-
On Characteristics
-0.65
-
-
-
300
-
-
-0.25
-0.4
-0.85
-0.95
(3)
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
(Vcc= -3.0 Vdc, V
BE
= 0.5 Vdc
Ic= -10 mAdc, I
B1
= -1.0 mAdc)
(Vcc= -3.0 Vdc,
Ic= -10 mAdc, I
B1
=I
B2
= -1.0 mAdc)
3.Pulse Test:Pulse Width 300 S, Duty Cycle 2.0%.
<
=
<
=
td
tr
ts
tf
-
-
-
-
35
35
225
75
ns
ns
WEITRON
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Electrical Characteristics
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
MMBT3906
WEITRON
<1ns
+0.5V
10.6V
300 ns
DUTY CYCLE=2%
10k
CS<4 pF
3V
275
+9.1V
<1ns
0
10<t1<500s
t1
10.9V
DUTY CYCLE=2%
10k
1N916
275
CS<4 pF
3V
*Total shunt capacitance of test jig and connectors
FIG.1 Delay and Rise Time
Equivalent Test Circuit
FIG.2 Storage and Fall Time
Equivalent Test Circuit
Cobo
Cibo
FIG.3 Capacitance
REVERSEM BIAS (VOLTS)
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
10
7.0
5.0
3.0
2.0
1.0
Q
T
Q
A
VCC=40V
IC/IB=10
FIG.4 Charge Data
IC COLLECTOR CURRENT (mA)
Q
C
H
A
R
G
E
(
p
C
)
5000
3000
2000
1000
500
300
700
100
70
50
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
TYPICAL TRANSIENT CHARACTERISTICS
TJ=25 C
TJ=125 C
FIG.6 Fall Time
IC COLLECTYOR CURRENT (mA)
t f
F
A
L
L
T
I
M
E
(
n
s
)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
500
300
200
100
70
50
30
20
10
7
5
VCC=40V
IB1=IB2
IC/IB=20
IC/IB=10
FIG.5 Turn-On Time
IC COLLECTOP CURRENT (mA)
T
I
M
E
(
n
s
)
15V
1.0
2.0 3.0 5.0 7.0 10
20 30
50 70 100
200
500
300
200
100
70
50
30
20
10
7
5
IC/IB=10
tr@VCC=3.0V
td@VOB=0V
40V
2.0V
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FIG.11 Input Impedance
IC COLLECTOR CURRENT (MA)
h f
e
I
N
P
U
T
I
M
P
E
D
A
N
C
E
(
k
O
H
M
S
)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
FIG.12 Votage Feeback Ratio
IC COLLECTOR CURRENT (mA)
0.1
0.2
0.3
0.5
0.7 1.0
2.0
3.0
5.0 7.0 10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
h f
e
V
O
L
T
A
G
E
F
E
E
B
A
C
K
R
A
T
I
O
(
X
1
0
x
4
)
MMBT3906
WEITRON
FIG.10 Input Impedance
IC COLLECTOR CURRENT(mA)
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0
7.0
1.0
h o
e
O
U
T
P
U
T
A
D
M
I
T
T
A
N
C
E
(
m
h
o
s
)
100
70
50
30
20
10
7
5
FIG.9 Current Gain
IC COLLECTOR CURRENT (mA)
h f
e
D
C
C
U
R
R
E
N
T
G
A
I
N
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 1.0
300
200
100
70
50
30
h PARAMETERS
(VCE= -10 Vdc, f= 1.0 kHz, TA= 25 C)
Rg SOURCE RESISTANCE (k OHMS)
FIG.8
N
F
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
12
10
8
6
4
2
0
f=1.0 kHz
IC=1.0mA
IC=0.5mA
IC=100A
f FREQUENCY (kHZ)
N
F
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
FIG.7
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
5.0
4.0
3.0
2.0
1.0
0
SOURCE RESISTANCE=200
IC=1.0 mA
SOURCE RESISTANCE=200
IC=0.5 mA
SOURCE RESISTANCE=2.0 k
IC=50 A
SOURCE RESISTANCE=2.0 k
IC=100 A
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE= -5.0 Vdc, TA= 25 C, Bandwidth= 1.0Hz)
IC=50A
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MMBT3906
WEITRON
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FIG.14 Collector Saturation Region
IB BASE CURRENT (mA)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0
0.8
0.6
0.4
0.2
0
V
C
E
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
IC=1.0mA
10mA
30mA
100mA
TJ=25 C
TYPICAL STATIC CHARACTERISTICS
FIG.13 DC Current Gain
IC COLLECTOR CURRENT (mA)
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
2.0
1.0
0.7
0.5
0.3
0.2
0.1
h F
E
D
C
C
U
R
R
E
N
T
G
A
I
N
(
N
O
R
M
A
L
I
Z
E
D
)
TJ=+125 C
+25 C
-55 C
VCE=10V
FIG.16 Temperature Coefficients
IC COLLECTOR CURRENT (mA)
q v
T
E
M
P
E
R
A
T
U
R
E
C
O
E
F
F
I
C
I
E
N
T
S
(
m
V
A
C
)
qVC FOR VCE(sat)
FOR VBE(sat)
qVB
0
20
40
60
80
100
120
140
160
180
200
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
+25 C TO +125 C
+25 C TO +125 C
-55 C TO +25 C
-55 C TO +25 C
FIG.15 "ON" Voltages
IC COLLECTOR CURRENT (mA)
V
V
O
L
T
A
G
E
(
V
O
L
T
S
)
10
20
50
10
20
50
100
200
1.0
0.8
0.6
0.4
0.2
0
TJ=25 C
VBE(sat) @ IC/IB=10
VCE(sat) @ IC/IB=10
VBE(sat) @VCE=1.0V
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