Switching Transistor PNP Silicon
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width 300 S, Duty Cycle 2.0%.
M aximum R atings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-40
-40
-5.0
Unit
Vdc
Vdc
Vdc
mAdc
-600
Rating
MMBT4403=2T
Device Marking
Collector-Emitter Breakdown Voltage
(3)
(I
C
=-1.0mAdc.I
B
=0)
Collector-Base Breakdown Voltage (I
C
=-0.1mAdc, I
E
=0)
Emitter-Base Breakdown Voltage (I
E
=-0.1mAdc, I
C
=0)
Base Cutoff Current (V
CE
=-35 Vdc, V
EB
=-0.4 Vdc)
Collector Cutoff Current (V
CE
=-35Vdc, V
EB
=-0.4Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BEV
I
CEX
-0.1
-0.1
Vdc
Vdc
Vdc
uAdc
uAdc
Off Characteristics
MMBT4403
1
2
3
BASE
COLLECTOR
EMITTER
-40
-40
-5.0
-
-
-
-
-
<
=
<
=
Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
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Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
=25 C
Derate above 25 C
Junction and Storage, Temperature
Characteristics
TJ,Tstg
R JA
PD
PD
Symbol
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Thermal Characteristics
q
R JA
q
SOT-23
1
2
3
MMBT4403
Small-signal Characteristics
Current-Gain-Bandwidth Product (4)
(IC= -20 mAdc, VCE= -10 Vdc, f=100MHz)
Collector-Base Capacitance
(VCB= -10 Vdc, IE=0, f=1.0MHz)
Emitter-Base Capacitance
(VEB= -0.5 Vdc, IC=0, f=1.0MHz)
Input Impedance
(VCE= -10 Vdc IC=-1.0 mAdc, f=1.0 kHz)
Voltage Feeback Radio
(VCE= -10Vdc IC=-1.0 mAdc, f=1.0 kHz)
Small-Signal Current Gain
(VCE= -10Vdc IC=-1.0 mAdc, , f=1.0 kHz)
Output Admittance
(VCE= -10Vdc IC=-1.0 mAdc, f=-1.0kHz)
fT
Ccb
Ceb
hie
hre
hfe
hoe
200
-
-
-
0.1
1.5
60
1.0
8.5
MHz
pF
pF
k ohms
x 10-4
-
mhos
100
500
8
15
30
DC Current Gain
(IC= -0.1 mAdc, VCE= -1.0Vdc)
(IC= -1.0 mAdc, VCE= -1.0 Vdc)
(IC= -10 mAdc, VCE= -1.0Vdc)
(IC= 150 mAdc, VCE= -2.0Vdc)
(IC= -500 mAdc, VCE= -2.0Vdc)
Collector-Emitter Saturation Voltage
(3)
(IC= -150 mAdc, IB= -15mAdc)
(IC= -500 mAdc, IB= -50mAdc)
Base-Emitter Saturation Voltage
(3)
(IC= -150 mAdc, IB= -15 mAdc)
(IC= -500 mAdc, IB= -50 mAdc)
HFE
VCE(sat)
VBE(sat)
-
Vdc
Vdc
30
60
100
100
20
-
-
On Characteristics
-0.75
-
-
300
-
-0.4
-0.75
-0.95
-1.3
(3)
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
(Vcc= -30 Vdc, V
EB
= -2.0 Vdc
Ic= -150 mAdc, I
B1
= -15 mAdc)
(Vcc= -30 Vdc,
Ic= -150 mAdc, I
B1
=I
B2
= -15 mAdc)
td
tr
ts
tf
-
-
-
-
15
20
225
30
ns
ns
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Electrical Characteristics
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
(3)
(3)
Figure 3. Capacitances
REVERSE VOLTAGE (VOLTS)
7.0
10
20
30
5.0
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
0.1
2.0
5.0
10
20
2.0
30
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
Q
,
C
H
A
R
G
E
(
n
C
)
2.0
3.0
5.0
7.0
10
1.0
10
20
50
70 100
200
0.1
300
500
0.7
0.5
VCC = 30 V
IC/IB = 10
Figure 5. Turn-On T ime
IC, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 6. Rise Time
IC, COLLECTOR CURRENT (mA)
Ceb
QT
QA
25 C
105 C
TRANSIENT CHARACTERISTICS
3.0
1.0
0.5
0.3
0.2
0.3
0.2
30
t
,
T
I
M
E
(
n
s
)
Ccb
70
100
10
20
50
70 100
200
300
500
30
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
20
30
50
5.0
10
7.0
70
100
10
20
50
70 100
200
300
500
30
VCC = 30 V
IC/IB = 10
0.7
7.0
t r
,
R
I
S
E
T
I
M
E
(
n
s
)
F igure 1. Turn-On T ime
F igure 2. Turn-Off T ime
S W IT C HING
T IME E QUIVA L E NT T E S T C IR C UIT
S cope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+2 V
- 16 V
10 to 100 ms,
DUTY CYCLE = 2%
0
1.0 k
- 30 V
200 W
CS* < 10 pF
1.0 k
- 30 V
200
CS* < 10 pF
+ 4.0 V
< 2 ns
1.0 to 100 m s,
DUTY CYCLE = 2%
< 20 ns
+14 V
0
-16 V
W
W
MMBT4403
WEITRON
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W
h P ARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25 C
This group of graphs illustrates the relationship between
hfe and other h parameters for this series of transistors. To
obtain these curves, a highgain and a lowgain unit were
selected from the MMBT4403LT1 lines, and the same units
were used to develop the correspondinglynumbered curves
on each graph.
Figure 10. Current Gain
IC, COLLECTOR CURRENT (mAdc)
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
300
700
30
200
100
1000
h f
e,
C
U
R
R
E
N
T
G
A
I
N
h i
e,
I
N
P
U
T
I
M
P
E
D
A
N
C
E
(
O
H
M
S
)
Figure 1 1. Input Impedance
IC, COLLECTOR CURRENT (mAdc)
100 k
100
50
5.0 7.0
20 k
10 k
5 k
2 k
1 k
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
5.0 7.0
Figure 12. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mAdc)
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
0.1
20
Figure 13. Output Admittance
IC, COLLECTOR CURRENT (mAdc)
500
1.0
5.0 7.0
50
20
10
5.0
2.0
5.0
2.0
1.0
0.5
0.2
h
,
O
U
T
P
U
T
A
D
M
I
T
T
A
N
C
E
(
m
h
o
s
)
o
e
h
,
V
O
L
T
A
G
E
F
E
E
D
B
A
C
K
R
A
T
I
O
(
X
1
0
)
r
e
-
4
MMBT4403 UNIT 1
MMBT4403 UNIT 2
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
5.0 7.0
500
70
50 k
500
200
10
100
MMBT4403 UNIT 1
MMBT4403 UNIT 2
MMBT4403 UNIT 1
MMBT4403 UNIT 2
MMBT4403 UNIT 1
MMBT4403 UNIT 2
Figure 7. Storage T ime
IC, COLLECTOR CURRENT (mA)
t s
,
S
T
O
R
A
G
E
T
I
M
E
(
n
s
)
4
10
20
50
70 100
200
300
500
30
100
20
70
50
200
30
IC/IB = 10
IC/IB = 20
IB1 = IB2
ts4 = ts - 1/8 tf
u
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MMBT4403
" "
S TAT IC C HAR AC T E R IS T IC S
Figure 14. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 15. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
0.5
2.0
3.0
50
0.2
0.3
0
1.0
0.7
5.0 7.0
C
E
IC = 1.0 mA
0.07
0.05
0.03
0.02
0.01
10 mA
100 mA
10
20
30
0.3
0.5
0.7
1.0
3.0
0.1
h
,
N
O
R
M
A
L
I
Z
E
D
C
U
R
R
E
N
T
G
A
I
N
0.5
2.0
3.0
10
50
70
0.2
0.3
0.2
100
1.0
0.7
500
30
20
5.0 7.0
F
E
TJ = 125 C
- 55 C
2.0
200
300
25 C
VCE = 1.0 V
VCE = 10 V
Figure 16. On V oltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 17. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V
O
L
T
A
G
E
(
V
O
L
T
S
)
1.0 2.0
5.0 10
20
50
0
100
0.5
0
0.5
1.0
1.5
2.0
500
TJ = 25 C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(sat) @ VCE = 10 V
VC for VCE(sat)
VS for VBE
200
0.1 0.2
0.5
C
O
E
F
F
I
C
I
E
N
T
(
m
V
/
C
)
2.5
1.0 2.0
5.0
10
20
50 100
500
200
0.1 0.2
0.5
500 mA
0.005
MMBT4403
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"
"
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